SCHEMBL3433964

SCHEMBL3433964

CC(CO)(CO)COCC(F)(F)C(F)(F)F

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15888090 0.93
SCHEMBL15888088 0.93
SCHEMBL8946429 0.90 CES1 (0.32)
SCHEMBL10018605 0.90
SCHEMBL13113242 0.90
SCHEMBL12918952 0.88
SCHEMBL14995949 0.88 CES1 (0.31)
SCHEMBL12918944 0.88
SCHEMBL13038276 0.86
SCHEMBL25792933 0.86 CES1 (0.37)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9134617-B2 Solvent developable negative resist composition, resist pattern formation method, and method for forming pattern of layer including block copolymer TOKYO OHKA KOGYO CO., LTD. (JP) 2015-09-15 US disclosed
US-20140302267-A1 ABHESIVE COATINGS VIRGINIA COMMONWEALTH UNIVERSITY (US) 2014-10-09 US disclosed
US-20140113236-A1 SOLVENT DEVELOPABLE NEGATIVE RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, AND METHOD FOR FORMING PATTERN OF LAYER INCLUDING BLOCK COPOLYMER RIKEN (JP) 2014-04-24 US disclosed
US-8353582-B2 Ultraviolet curable inkjet recording ink and color image forming apparatus RICOH COMPANY, LTD. (JP) 2013-01-15 US disclosed
US-8241833-B2 Positive resist composition and pattern-forming method using the same FUJIFILM CORPORATION (JP) 2012-08-14 US disclosed
US-20120094235-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2012-04-19 US disclosed
US-20120039971-A1 Solid Powder Cosmetic And Method For Producing The Same SHISEIDO COMPANY, LTD. (JP) 2012-02-16 US disclosed
US-20120034281-A1 Solid Powder Cosmetic And Method For Producing The Same SHISEIDO COMPANY, LTD. (JP) 2012-02-09 US disclosed
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-8084187-B2 Resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2011-12-27 US disclosed
US-20090253070-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-08 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090208859-A1 ANTICURL BACKSIDE COATING (ACBC) PHOTOCONDUCTORS XEROX CORPORATION (US) 2009-08-20 US disclosed
US-20090208857-A1 OVERCOAT CONTAINING FLUORINATED POLY(OXETANE) PHOTOCONDUCTORS XEROX CORPORATION (US) 2009-08-20 US disclosed
US-20090087789-A1 RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-7498116-B2 Resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2009-03-03 US disclosed
US-20080274421-A1 PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-11-06 US disclosed
US-20080241750-A1 RESIST COMPOSITION AND PATTERN FORMATION METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-10-02 US disclosed
US-20080050675-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-02-28 US disclosed
US-20070072118-A1 Positive photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed