SCHEMBL3445240

SCHEMBL3445240

CCCCCCCCCCCCOc1ccc(N)cc1S(=O)(=O)O

nearest known ligand 0.53

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
S1PR3 Q99500 1/20 0.53
HSD17B10 Q99714 1/20 0.47
TSHR P16473 1/20 0.47
THRA P10827 1/20 0.46
THRB P10828 1/20 0.46
MAPT P10636 3/20 0.45
ALDH1A1 P00352 3/20 0.45
MEN1 O00255 2/20 0.45
KMT2A Q03164 2/20 0.45
KDM4E B2RXH2 1/20 0.45
USP2 O75604 1/20 0.45
TP53 P04637 1/20 0.45
POLB P06746 1/20 0.45
GAA P10253 1/20 0.45
CASP1 P29466 1/20 0.45
HTT P42858 1/20 0.45
CASP7 P55210 1/20 0.45
ATM Q13315 1/20 0.45
NPC1 O15118 1/20 0.44
RAB9A P51151 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3444651 1.00 S1PR3 (0.53) S1PR3HSD17B10TSHRTHRATHRB
SCHEMBL156474 1.00 S1PR3 (0.53) S1PR3HSD17B10TSHRTHRATHRB
SCHEMBL156095 0.94 HSD17B10 (0.49) S1PR3HSD17B10TSHRTHRATHRB
SCHEMBL1606275 0.90 MAPT (0.57) S1PR3HSD17B10MAPTALDH1A1MEN1
Methane SCHEMBL18477986 0.86 S1PR3 (0.47) S1PR3HSD17B10TSHRTHRATHRB
SCHEMBL11284689 0.84 KDM4E (0.48) S1PR3HSD17B10MAPTALDH1A1MEN1
SCHEMBL4528105 0.84 S1PR3 (0.54) S1PR3TSHRTHRATHRBMAPT
SCHEMBL4528057 0.84 S1PR3 (0.54) S1PR3TSHRTHRATHRBMAPT
SCHEMBL4540961 0.84 S1PR3 (0.54) S1PR3TSHRTHRATHRBMAPT
SCHEMBL10477944 0.84 HSD17B10 (0.44) S1PR3HSD17B10TSHRTHRBMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 2 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8557144-B2 Material for forming conductive antireflection film, method for forming conductive antireflection film, method for forming resist pattern, semiconductor device, and magnetic head FUJITSU LIMITED (JP) 2013-10-15 US disclosed
US-20100009296-A1 MATERIAL FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING CONDUCTIVE ANTIREFLECTION FILM, METHOD FOR FORMING RESIST PATTERN, SEMICONDUCTOR DEVICE, AND MAGNETIC HEAD FUJITSU LIMITED (JP) 2010-01-14 US disclosed