SCHEMBL4528057

SCHEMBL4528057

CCCCCCOc1ccc(C)cc1S(=O)(=O)O

nearest known ligand 0.54

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
S1PR3 Q99500 1/20 0.54
POLB P06746 2/20 0.52
THRB P10828 3/20 0.47
THRA P10827 2/20 0.47
GAA P10253 3/20 0.46
ALDH1A1 P00352 2/20 0.46
MAPT P10636 1/20 0.46
NPSR1 Q6W5P4 1/20 0.46
MEN1 O00255 2/20 0.43
KMT2A Q03164 2/20 0.43
KDM4E B2RXH2 1/20 0.43
TSHR P16473 1/20 0.43
HPGD P15428 1/20 0.43
SMPD1 P17405 3/20 0.42
ESR1 P03372 2/20 0.42
TDP1 Q9NUW8 1/20 0.42
L3MBTL1 Q9Y468 1/20 0.42
PTPN11 Q06124 1/20 0.42
L3MBTL4 Q8NA19 1/20 0.41
L3MBTL3 Q96JM7 1/20 0.41

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4540961 1.00 S1PR3 (0.54) S1PR3POLBTHRBTHRAGAA
SCHEMBL4528105 1.00 S1PR3 (0.54) S1PR3POLBTHRBTHRAGAA
SCHEMBL4539460 0.94 POLB (0.51) S1PR3POLBTHRBTHRAGAA
SCHEMBL14542091 0.88 S1PR3 (0.51) S1PR3POLBTHRBTHRAGAA
SCHEMBL9498085 0.88 S1PR3 (0.51) S1PR3POLBTHRBTHRAGAA
SCHEMBL5862010 0.87 POLB (0.50) S1PR3POLBTHRBTHRAGAA
SCHEMBL156474 0.84 S1PR3 (0.53) S1PR3POLBTHRBTHRAGAA
SCHEMBL156473 0.84 S1PR3 (0.53) S1PR3THRBTHRAALDH1A1MAPT
SCHEMBL4527770 0.84 S1PR3 (0.53) S1PR3THRBTHRAALDH1A1MAPT
SCHEMBL3444651 0.84 S1PR3 (0.53) S1PR3POLBTHRBTHRAGAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-7534554-B2 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2009-05-19 US disclosed
US-20080233518-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND MANUFACTURING METHOD OF SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH SUCH CHEMICALLY AMPLIFIED RESIST COMPOSITION NEC ELECTRONICS CORPORATION (JP) 2008-09-25 US disclosed
US-7396633-B2 Damascene process; forming connectors; exposure; development; using acid generator, quencher and buffer NEC ELECTRONICS CORPORATION (JP) 2008-07-08 US disclosed
US-20040259029-A1 Chemically amplified resist composition and manufacturing method of semiconductor integrated circuit device with such chemically amplified resist composition NEC ELECTRONICS CORPORATION (JP) 2004-12-23 US disclosed