⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29213513 | 1.00 | — | — | |
| SCHEMBL27746297 | 1.00 | — | — | |
| SCHEMBL6408104 | 0.89 | — | — | |
| SCHEMBL27777048 | 0.87 | — | — | |
| SCHEMBL29961095 | 0.87 | — | — | |
| SCHEMBL82518 | 0.87 | — | — | |
| SCHEMBL43134 | 0.87 | — | — | |
| SCHEMBL8630625 | 0.82 | — | — | |
| Tetrafluoroethylene SCHEMBL31243314 | 0.82 | — | — | |
| Tetrafluoroethylene SCHEMBL27526798 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-113471096-B | Method and system for detecting process chamber conditions and computer readable medium | 台湾积体电路制造股份有限公司 | 2025-02-14 | — | — | CN | claimed |
| CN-104241319-B | Organic light emitting diode display | 三星显示有限公司 | 2019-05-28 | — | — | CN | claimed |
| US-9064786-B2 | Dual three-dimensional (3D) resistor and methods of forming | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-06-23 | — | — | US | claimed |
| US-20140264752-A1 | DUAL THREE-DIMENSIONAL (3D) RESISTOR AND METHODS OF FORMING | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-09-18 | — | — | US | claimed |
| US-6811936-B2 | Structure and process for a pellicle membrane for 157 nanometer lithography | FREESCALE SEMICONDUCTOR INC. | 2004-11-02 | — | — | US | claimed |
| US-20040126671-A1 | Structure and process for a pellicle membrane for 157 nanometer lithography | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2004-07-01 | — | — | US | claimed |
| JP-9134914-A | — | — | None | — | — | JP | disclosed |
| WO-2024222123-A1 | CHIP, MANUFACTURING METHOD THEREFOR AND ELECTRONIC DEVICE | 华为技术有限公司 | 2024-10-31 | — | — | WO | disclosed |
| CN-110391174-A | Manufacture the method with the semiconductor devices of the structure plan containing multiple grooves | 三星电子株式会社 | 2019-10-29 | — | — | CN | disclosed |
| US-10345701-B2 | Photoresist polymers, photoresist compositions, methods of forming patterns and methods of manufacturing semiconductor devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-07-09 | — | — | US | disclosed |
| CN-104241319-B | Organic light emitting diode display | 三星显示有限公司 | 2019-05-28 | — | — | CN | disclosed |
| US-9991281-B2 | Semiconductor devices and methods of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2018-06-05 | — | — | US | disclosed |
| US-20180069020-A1 | PHOTORESIST POLYMERS, PHOTORESIST COMPOSITIONS, METHODS OF FORMING PATTERNS AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES | PARK JIN (KR) | 2018-03-08 | — | — | US | disclosed |
| US-20150060979-A1 | VERTICAL MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2015-03-05 | — | — | US | disclosed |
| US-20140264752-A1 | DUAL THREE-DIMENSIONAL (3D) RESISTOR AND METHODS OF FORMING | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2014-09-18 | — | — | US | disclosed |
| US-8592229-B2 | Method for forming dual damascene structure | UNITED MICROELECTRONICS CORP. (TW) | 2013-11-26 | — | — | US | disclosed |
| US-20100087018-A1 | METHOD FOR FORMING DUAL DAMASCENE STRUCTURE | UNITED MICROELECTRONICS CORP. (TW) | 2010-04-08 | — | — | US | disclosed |
| US-6811936-B2 | Structure and process for a pellicle membrane for 157 nanometer lithography | FREESCALE SEMICONDUCTOR INC. | 2004-11-02 | — | — | US | disclosed |
| US-20040126671-A1 | Structure and process for a pellicle membrane for 157 nanometer lithography | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2004-07-01 | — | — | US | disclosed |
| JP-H09134914-A | FORMATION OF ELEMENT ISOLATION REGION | OKI ELECTRIC IND CO LTD | 1997-05-20 | — | — | JP | disclosed |