⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL9976185 | 1.00 | — | — | |
| SCHEMBL3474970 | 1.00 | — | — | |
| SCHEMBL1639210 | 1.00 | — | — | |
| SCHEMBL13923825 | 0.89 | — | — | |
| SCHEMBL20345782 | 0.87 | — | — | |
| SCHEMBL12725247 | 0.87 | — | — | |
| SCHEMBL13133223 | 0.87 | — | — | |
| SCHEMBL14424563 | 0.82 | — | — | |
| SCHEMBL41538 | 0.82 | — | — | |
| SCHEMBL16329397 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20230399469-A1 | ORGANOPOLYSILOXANE AND PRODUCTION METHOD THEREFOR, DISPERSANT COMPRISING ORGANOPOLYSILOXANE, AND DISPERSION CONTAINING ORGANOPOLYSILOXANE AS DISPERSANT | JNC CORPORATION (JP) | 2023-12-14 | — | — | US | disclosed |
| US-8513448-B2 | Cyclic siloxane compound, a material for forming Si-containing film, and its use | TOSOH CORPORATION (JP) | 2013-08-20 | — | — | US | disclosed |
| EP-2256123-A2 | Cyclic siloxane compound, a material for forming Si-containing film, and its use | Tosoh Corporation (JP) | 2010-12-01 | — | — | EP | disclosed |
| US-20100052114-A1 | CYCLIC SILOXANE COMPOUND, A MATERIAL FOR FORMING SI-CONTAINING FILM, AND ITS USE | TOSOH CORPORATION (JP) | 2010-03-04 | — | — | US | disclosed |
| US-20090294922-A1 | ORGANIC SILICON OXIDE FINE PARTICLE AND PREPARATION METHOD THEREOF, POROUS FILM-FORMING COMPOSITION, POROUS FILM AND FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE | PANASONIC CORPORATION (JP) | 2009-12-03 | — | — | US | disclosed |
| EP-1845100-A1 | CYCLIC SILOXANE COMPOUND, Si-CONTAINING FILM-FORMING MATERIAL, AND USE THEREOF | Tosoh Corporation (JP) | 2007-10-17 | — | — | EP | disclosed |
| US-7064088-B2 | Method for forming low-k hard film | ASM JAPAN K.K. (JP) | 2006-06-20 | — | — | US | disclosed |
| US-6881683-B2 | Insulation film on semiconductor substrate and method for forming same | ASM JAPAN K.K. (JP) | 2005-04-19 | — | — | US | disclosed |
| US-6740602-B1 | Method of forming low-dielectric constant film on semiconductor substrate by plasma reaction using high-RF power | ASM JAPAN K.K. (JP) | 2004-05-25 | — | — | US | disclosed |
| US-20040038514-A1 | Method for forming low-k hard film | ASM JAPAN K.K. (JP) | 2004-02-26 | — | — | US | disclosed |
| US-20030162408-A1 | Insulation film on semiconductor substrate and method for forming same | ASM JAPAN K.K. (JP) | 2003-08-28 | — | — | US | disclosed |
| US-4197384-A | Stabilized polycarbonate compositions | GENERAL ELECTRIC COMPANY (US) | 1980-04-08 | — | — | US | disclosed |