SCHEMBL3476182

SCHEMBL3476182

CC(C)(C)NC([SiH3])NC(C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL9100681 0.74
SCHEMBL90103 0.70
SCHEMBL17102757 0.67 TSHR (0.32)
SCHEMBL104329 0.64
SCHEMBL10005572 0.64 SLC6A4 (0.42)
SCHEMBL13725538 0.64 SLC6A4 (0.42)
SCHEMBL20389467 0.62 TDP1 (0.41)
SCHEMBL25168535 0.62
SCHEMBL13240336 0.61
SCHEMBL13716925 0.61

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 62 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12518966-B2 Selective plasma enhanced atomic layer deposition VERSUM MATERIALS US, LLC (US) 2026-01-06 US claimed
US-20250270698-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS VERSUM MATERIALS US, LLC 2025-08-28 US claimed
US-20250166990-A1 METHOD FOR FORMING INSULATING FILM, AND SUBSTRATE PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2025-05-22 US claimed
EP-4493734-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS Versum Materials US, LLC (US) 2025-01-22 EP claimed
US-20240321571-A1 INSULATING FILM FORMING METHOD AND SUBSTRATE PROCESSING SYSTEM TOKYO ELECTRON LIMITED (JP) 2024-09-26 US claimed
EP-3347504-B1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS VERSUM MAT US LLC (US) 2024-09-25 EP claimed
US-20240047196-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION VERSUM MAT US LLC (US) 2024-02-08 US claimed
US-20240014036-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION VERSUM MATERIALS US, LLC 2024-01-11 US claimed
WO-2023201271-A1 BORON-CONTAINING PRECURSORS FOR THE ALD DEPOSITION OF BORON NITRIDE FILMS VERSUM MATERIALS US, LLC (US) 2023-10-19 WO claimed
EP-4240886-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION Versum Materials US, LLC (US) 2023-09-13 EP claimed
US-11732351-B2 Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films VERSUM MATERIALS US, LLC (US) 2023-08-22 US claimed
WO-2022119865-A1 SELECTIVE PLASMA ENHANCED ATOMIC LAYER DEPOSITION VERSUM MATERIALS US, LLC (US) 2022-06-09 WO claimed
WO-2022119860-A1 SELECTIVE THERMAL ATOMIC LAYER DEPOSITION VERSUM MATERIAL US, LLC (US) 2022-06-09 WO claimed
US-20210388489-A1 Methods for Depositing a Conformal Metal or Metalloid Silicon Nitride Film and Resultant Films VERSUM MATERIALS US, LLC (US) 2021-12-16 US claimed
US-20180274097-A1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM VERSUM MATERIALS US, LLC 2018-09-27 US claimed
US-20180245215-A1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS VERSUM MATERIALS US, LLC 2018-08-30 US claimed
EP-3347504-A1 METHODS FOR DEPOSITING A CONFORMAL METAL OR METALLOID SILICON NITRIDE FILM AND RESULTANT FILMS Air Products and Chemicals, Inc. (US) 2018-07-18 EP claimed
EP-2251899-B1 Dielectric barrier deposition using nitrogen containing precursor VERSUM MAT US LLC (US) 2018-03-28 EP claimed
US-20150275355-A1 COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-10-01 US claimed
EP-2924143-A1 COMPOSITIONS AND METHODS FOR THE DEPOSITION OF SILICON OXIDE FILMS AIR PRODUCTS AND CHEMICALS, INC. (US) 2015-09-30 EP claimed