SCHEMBL3481455

SCHEMBL3481455

C=CC(CCCCC)O[SiH3]

nearest known ligand 0.34

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.34
OPRM1 P35372 1/20 0.34
LMNA P02545 1/20 0.32
ALDH1A1 P00352 1/20 0.32
ADH1B P00325 1/20 0.31
ADH1C P00326 1/20 0.31
ADH1A P07327 1/20 0.31
ADH4 P08319 1/20 0.31
ADH7 P40394 1/20 0.31
DNM1 Q05193 2/20 0.31
SMPD1 P17405 3/20 0.31
TRPA1 O75762 1/20 0.31
DDAH1 O94760 1/20 0.31
GAPDH P04406 1/20 0.31
MAPT P10636 1/20 0.31
FDPS P14324 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482448 0.98 TSHR (0.38) TSHROPRM1LMNAADH1BADH1C
SCHEMBL8680814 0.98 TSHR (0.38) TSHROPRM1LMNAADH1BADH1C
SCHEMBL10847643 0.98 TSHR (0.38) TSHROPRM1LMNAADH1BADH1C
SCHEMBL3481982 0.93
SCHEMBL1271225 0.84
SCHEMBL19356850 0.84 TSHR (0.39) TSHROPRM1LMNAALDH1A1ADH1B
SCHEMBL892183 0.82 TSHR (0.37) TSHROPRM1LMNAALDH1A1ADH1B
SCHEMBL9311248 0.80 TSHR (0.41) TSHROPRM1LMNAADH1BADH1C
SCHEMBL2187237 0.80 TSHR (0.41) TSHROPRM1LMNAADH1BADH1C
SCHEMBL1378622 0.80 TSHR (0.41) TSHROPRM1LMNAADH1BADH1C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed