SCHEMBL3482448

SCHEMBL3482448

C=CC(CCCCCC)O[SiH3]

nearest known ligand 0.38

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.38
LMNA P02545 1/20 0.35
DNM1 Q05193 2/20 0.34
ADH1B P00325 1/20 0.34
ADH1C P00326 1/20 0.34
ADH1A P07327 1/20 0.34
ADH4 P08319 1/20 0.34
ADH7 P40394 1/20 0.34
SMPD1 P17405 3/20 0.33
OPRM1 P35372 1/20 0.33
THRB P10828 1/20 0.33
GPR84 Q9NQS5 2/20 0.32
ZDHHC7 Q9NXF8 1/20 0.32
FDPS P14324 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8680814 1.00 TSHR (0.38) TSHRLMNADNM1ADH1BADH1C
SCHEMBL10847643 1.00 TSHR (0.38) TSHRLMNADNM1ADH1BADH1C
SCHEMBL3481455 0.98 TSHR (0.34) TSHRLMNADNM1ADH1BADH1C
SCHEMBL3481982 0.91
SCHEMBL2187237 0.83 TSHR (0.41) TSHRLMNADNM1ADH1BADH1C
SCHEMBL21638858 0.83 TSHR (0.41) TSHRLMNADNM1ADH1BADH1C
SCHEMBL9311248 0.83 TSHR (0.41) TSHRLMNADNM1ADH1BADH1C
SCHEMBL5177427 0.83 TSHR (0.41) TSHRLMNADNM1ADH1BADH1C
SCHEMBL1378622 0.83 TSHR (0.41) TSHRLMNADNM1ADH1BADH1C
SCHEMBL1715275 0.83 TSHR (0.41) TSHRLMNADNM1ADH1BADH1C

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed