SCHEMBL3481611

SCHEMBL3481611

CCCC(C)(CCO[SiH3])c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CYP2C19 P33261 3/20 0.39
HIF1A Q16665 1/20 0.39
ESR1 P03372 1/20 0.38
ESR2 Q92731 1/20 0.38
MAPK1 P28482 1/20 0.36
SCN1A P35498 3/20 0.36
SCN2A Q99250 3/20 0.36
SCN3A Q9NY46 3/20 0.36
LMNA P02545 2/20 0.36
CYP1A2 P05177 2/20 0.36
CYP3A4 P08684 2/20 0.36
CYP2D6 P10635 2/20 0.36
CYP2C9 P11712 2/20 0.36
SIGMAR1 Q99720 2/20 0.36
TSHR P16473 1/20 0.36
NFKB1 P19838 1/20 0.36
MTOR P42345 1/20 0.36
RAB9A P51151 1/20 0.36
KDM4E B2RXH2 1/20 0.35
MEN1 O00255 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482254 0.90 CYP2C19 (0.37) CYP2C19HIF1AESR1ESR2MAPK1
SCHEMBL26757337 0.84 CYP2C19 (0.50) CYP2C19HIF1AESR1ESR2MAPK1
SCHEMBL3482724 0.84 CYP2C19 (0.40) CYP2C19HIF1AESR1ESR2MAPK1
SCHEMBL3481507 0.80 ESR1 (0.46) CYP2C19ESR1ESR2MAPK1SCN1A
SCHEMBL708503 0.80 SCN1A (0.37) CYP2C19MAPK1SCN1ASCN2ASCN3A
SCHEMBL3482253 0.77 SCN1A (0.35) CYP2C19MAPK1SCN1ASCN2ASCN3A
SCHEMBL28670436 0.77 CYP2C19 (0.44) CYP2C19HIF1AESR1ESR2MAPK1
SCHEMBL8612395 0.77 CYP2C19 (0.47) CYP2C19HIF1AESR1ESR2MAPK1
SCHEMBL597345 0.77 CYP2C19 (0.47) CYP2C19HIF1AESR1ESR2MAPK1
SCHEMBL706645 0.74 KCNN4 (0.35) CYP2C19MAPK1SCN1ASCN2ASCN3A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed