SCHEMBL3482253

SCHEMBL3482253

CCCC(CC)(CCO[SiH3])c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SCN1A P35498 3/20 0.35
SCN2A Q99250 3/20 0.35
SCN3A Q9NY46 3/20 0.35
LMNA P02545 2/20 0.35
CYP1A2 P05177 2/20 0.35
CYP3A4 P08684 2/20 0.35
CYP2D6 P10635 2/20 0.35
CYP2C9 P11712 2/20 0.35
CYP2C19 P33261 2/20 0.35
SIGMAR1 Q99720 2/20 0.35
TSHR P16473 1/20 0.35
NFKB1 P19838 1/20 0.35
MTOR P42345 1/20 0.35
RAB9A P51151 1/20 0.35
KDM4E B2RXH2 1/20 0.35
MEN1 O00255 1/20 0.35
NR1I2 O75469 1/20 0.35
CYP1A1 P04798 1/20 0.35
CYP2E1 P05181 1/20 0.35
CYP2C8 P10632 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL708503 0.93 SCN1A (0.37) SCN1ASCN2ASCN3ALMNACYP1A2
SCHEMBL706645 0.91 KCNN4 (0.35) SCN1ASCN2ASCN3ALMNACYP1A2
SCHEMBL3482216 0.90 LTA4H (0.35) SCN1ASCN2ASCN3ALMNACYP1A2
SCHEMBL3481873 0.84 SCN1A (0.33) SCN1ASCN2ASCN3ALMNACYP1A2
SCHEMBL708789 0.83 LTA4H (0.37) SCN1ASCN2ASCN3ALMNACYP1A2
SCHEMBL706396 0.83 SCN1A (0.35) SCN1ASCN2ASCN3ALMNACYP1A2
SCHEMBL597655 0.81 KCNN4 (0.41) SCN1ASCN2ASCN3ALMNACYP1A2
SCHEMBL706328 0.81 SIGMAR1 (0.36) SCN1ASCN2ASCN3ALMNACYP1A2
SCHEMBL707031 0.80 KCNN4 (0.35) SCN1ASCN2ASCN3ALMNACYP1A2
SCHEMBL3481507 0.79 ESR1 (0.46) SCN1ASCN2ASCN3ALMNACYP1A2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed