⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15302749 | 0.89 | TSHR (0.36) | — | |
| SCHEMBL3482103 | 0.86 | TSHR (0.33) | — | |
| SCHEMBL3481415 | 0.85 | — | — | |
| SCHEMBL15301592 | 0.82 | — | — | |
| SCHEMBL15303064 | 0.79 | TSHR (0.36) | — | |
| SCHEMBL4077938 | 0.78 | — | — | |
| SCHEMBL4080620 | 0.78 | — | — | |
| SCHEMBL4077426 | 0.78 | — | — | |
| SCHEMBL3481573 | 0.78 | — | — | |
| SCHEMBL2240707 | 0.78 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8791221-B2 | Addition-curable metallosiloxane compound | DAICEL CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| EP-2650319-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | Daicel Corporation (JP) | 2013-10-16 | — | — | EP | disclosed |
| US-20130267653-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | DAICEL CORPORATION (JP) | 2013-10-10 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |