SCHEMBL2240707

SCHEMBL2240707

C=C[Si](CCC)(OCCC)OCCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL931781 0.93
SCHEMBL930966 0.88
SCHEMBL931201 0.88
SCHEMBL2240233 0.86 TSHR (0.36)
SCHEMBL3481679 0.86 TSHR (0.32)
SCHEMBL930713 0.83
SCHEMBL2247641 0.83
SCHEMBL2246451 0.83
SCHEMBL22661026 0.81
SCHEMBL5834136 0.80 TSHR (0.32)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116234874-B Curable composition 株式会社钟化 2024-07-19 CN disclosed
CN-116234874-A Curable composition 株式会社钟化 2023-06-06 CN disclosed
WO-2022075386-A1 CURABLE COMPOSITION 株式会社カネカ 2022-04-14 WO disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
CN-101641767-B Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device FUJITSU LTD 2013-10-30 CN disclosed
US-7994250-B2 Vinyl-urethane copolymers with intermediary linkage segments having silicon-oxygen bonds and production methods thereof KONISHI CO., LTD. (JP) 2011-08-09 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
US-20090326151-A1 HAIR COSMETIC KONISHI CO., LTD. (JP) 2009-12-31 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
EP-2039347-A1 COSMETIC HAIR PREPARATION Shiseido Company, Limited (JP) 2009-03-25 EP disclosed
EP-1837360-A1 VINYL-URETHANE COPOLYMER AND METHOD FOR PRODUCING SAME Konishi Co., Ltd. (JP) 2007-09-26 EP disclosed
US-20070117902-A1 Vinyl-urethane copolymers and production methods thereof KONISHI CO., LTD. (JP) 2007-05-24 US disclosed
US-7005532-B2 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2006-02-28 US disclosed
US-20050020845-A1 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2005-01-27 US disclosed
EP-1428828-A1 PROCESS FOR PREPARATION OF ALKOXYSILANES TOAGOSEI CO., LTD. (JP) 2004-06-16 EP disclosed
US-4026826-A ALKOXYSILANES JAPAN ATOMIC ENERGY RESEARCH INSTITUTE (JA) 1977-05-31 US disclosed