⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL412701 | 0.77 | — | — | |
| SCHEMBL29201668 | 0.77 | — | — | |
| SCHEMBL23701200 | 0.77 | — | — | |
| SCHEMBL21313359 | 0.73 | LMNA (0.30) | — | |
| SCHEMBL22534474 | 0.73 | — | — | |
| SCHEMBL703816 | 0.73 | — | — | |
| SCHEMBL3481815 | 0.73 | — | — | |
| SCHEMBL23883550 | 0.71 | — | — | |
| SCHEMBL29240683 | 0.71 | — | — | |
| SCHEMBL3481425 | 0.69 | TSHR (0.32) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-109641430-B | Photocatalyst laminate | 信越化学工业株式会社 | 2022-03-11 | — | — | CN | disclosed |
| EP-3505343-B1 | PHOTOCATALYST LAMINATE | SHINETSU CHEMICAL CO (JP) | 2022-01-12 | — | — | EP | disclosed |
| US-11161097-B2 | Photocatalyst laminate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2021-11-02 | — | — | US | disclosed |
| CN-109715680-B | Process for preparing high cis-1, 4-polydienes with lanthanide-based catalyst compositions | 株式会社普利司通 | 2021-10-19 | — | — | CN | disclosed |
| EP-3178876-B1 | INORGANIC PARTICLE-POLYSILOXANE COMPOSITE, DISPERSION AND SOLID MATERIAL CONTAINING THE COMPOSITE, AND MAKING METHOD | SHINETSU CHEMICAL CO (JP) | 2020-10-21 | — | — | EP | disclosed |
| EP-3546497-A1 | INORGANIC PARTICLE/SILOXANE COMPOSITE, METHOD FOR PRODUCING SAME, AND INORGANIC-PARTICLE-CONTAINING SILICONE COMPOSITION | Shin-Etsu Chemical Co., Ltd. (JP) | 2019-10-02 | — | — | EP | disclosed |
| US-20190264032-A1 | INORGANIC PARTICLE/SILOXANE COMPOSITE, METHOD FOR PRODUCING SAME, AND INORGANIC-PARTICLE-CONTAINING SILICONE COMPOSITION | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-08-29 | — | — | US | disclosed |
| US-20190225821-A1 | COATING COMPOSITION AND COATED ARTICLE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-07-25 | — | — | US | disclosed |
| US-20190210007-A1 | PHOTOCATALYST LAMINATE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-07-11 | — | — | US | disclosed |
| EP-3505343-A1 | PHOTOCATALYST LAMINATE | Shin-Etsu Chemical Co., Ltd. (JP) | 2019-07-03 | — | — | EP | disclosed |
| US-8907038-B2 | Typical metal containing polysiloxane composition, process for its production, and its uses | TOSOH CORPORATION (JP) | 2014-12-09 | — | — | US | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| EP-2584005-A1 | TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR PRODUCTION OF SAME, AND USES THEREOF | Tosoh Corporation (JP) | 2013-04-24 | — | — | EP | disclosed |
| US-20130090447-A1 | TYPICAL METAL CONTAINING POLYSILOXANE COMPOSITION, PROCESS FOR ITS PRODUCTION, AND ITS USES | TOSOH CORPORATION (JP) | 2013-04-11 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-7413775-B2 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION (JP) | 2008-08-19 | — | — | US | disclosed |
| US-7160625-B2 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION (JP) | 2007-01-09 | — | — | US | disclosed |
| US-20060127683-A1 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION | 2006-06-15 | — | — | US | disclosed |
| US-20030180550-A1 | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORPORATION | 2003-09-25 | — | — | US | disclosed |