SCHEMBL3481854

SCHEMBL3481854

Cc1ccc(CC(O[SiH3])c2ccccc2)cc1

nearest known ligand 0.44

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
SMN1; SMN2 Q16637 1/20 0.44
MEN1 O00255 2/20 0.41
KMT2A Q03164 2/20 0.41
PSMB5 P28074 2/20 0.40
PKM P14618 1/20 0.40
HCRTR2 O43614 1/20 0.39
PPARG P37231 1/20 0.38
PPARA Q07869 1/20 0.38
CYP19A1 P11511 1/20 0.37
LMNA P02545 1/20 0.37
POLB P06746 1/20 0.37
ATM Q13315 1/20 0.37
L3MBTL1 Q9Y468 1/20 0.37
PSMB8 P28062 1/20 0.36

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL675684 0.87 SLC6A2 (0.44)
SCHEMBL9281134 0.85 SMN1; SMN2 (0.46) SMN1; SMN2MEN1KMT2APSMB5PKM
SCHEMBL3482608 0.83 SMN1; SMN2 (0.41) SMN1; SMN2MEN1KMT2APKMPPARG
SCHEMBL10489055 0.77 SLC6A2 (0.55) SMN1; SMN2MEN1KMT2APSMB5PKM
SCHEMBL4973916 0.75 SLC6A2 (0.53) SMN1; SMN2MEN1KMT2APSMB5PKM
SCHEMBL2844291 0.73 ESR1 (0.53) SMN1; SMN2MEN1KMT2APSMB5HCRTR2
SCHEMBL703561 0.72 LMNA (0.46) LMNAPOLB
SCHEMBL28549206 0.72 PPARG (0.49) SMN1; SMN2MEN1KMT2APSMB5PKM
SCHEMBL28543673 0.72 NPSR1 (0.52) MEN1KMT2APPARGPPARAPOLB
SCHEMBL9771341 0.72 LMNA (0.48) SMN1; SMN2MEN1KMT2APSMB5PKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed