SCHEMBL3481913

SCHEMBL3481913

CCCO[Si](Cc1ccccc1)(Cc1ccccc1)Cc1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.41
LMNA P02545 2/20 0.37
MEN1 O00255 1/20 0.37
KMT2A Q03164 1/20 0.37
TSHR P16473 2/20 0.34
ALDH1A1 P00352 3/20 0.34
LTA4H P09960 1/20 0.34
HPGD P15428 1/20 0.34
MAPT P10636 1/20 0.33
CYP3A4 P08684 1/20 0.33
MAPK1 P28482 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
L3MBTL1 Q9Y468 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15302763 0.84 TP53 (0.32) TP53LMNAMEN1KMT2A
SCHEMBL15301997 0.84 TP53 (0.32) TP53LMNAMEN1KMT2A
SCHEMBL106933 0.83 TP53 (0.41) TP53LMNAMEN1KMT2ATSHR
SCHEMBL3482095 0.83 TP53 (0.41) TP53LMNAMEN1KMT2ATSHR
SCHEMBL3338279 0.83 TP53 (0.44) TP53TSHRALDH1A1LTA4HMAPT
SCHEMBL19809238 0.82 TP53 (0.39) TP53LMNAMEN1KMT2ATSHR
SCHEMBL22661052 0.82 TP53 (0.39) TP53LMNAMEN1KMT2ATSHR
SCHEMBL19809388 0.82 TP53 (0.39) TP53LMNAMEN1KMT2ATSHR
SCHEMBL19809426 0.80 LMNA (0.39) TP53LMNAMEN1KMT2ATSHR
SCHEMBL63382 0.80 TP53 (0.38) TP53LMNAMEN1KMT2AMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed