SCHEMBL3481932

SCHEMBL3481932

CCCC[Si](O)(CCC)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
PCSK9 Q8NBP7 1/20 0.37
PTGS2 P35354 1/20 0.36
NAAA Q02083 1/20 0.36
AR P10275 1/20 0.36
TSHR P16473 2/20 0.35
CES2 O00748 2/20 0.35
CES1 P23141 2/20 0.35
HTT P42858 2/20 0.35
EGFR P00533 1/20 0.35
EPHX1 P07099 3/20 0.34
EPHX2 P34913 1/20 0.34
ALDH1A1 P00352 1/20 0.34
NR1H2 P55055 1/20 0.34
NR1H3 Q13133 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482551 0.96 PCSK9 (0.39) PCSK9PTGS2NAAAARTSHR
SCHEMBL3482130 0.92 ESR1 (0.37) PCSK9PTGS2NAAACES2CES1
SCHEMBL6965430 0.90 NAAA (0.41) PCSK9PTGS2NAAACES2CES1
SCHEMBL273717 0.88 PCSK9 (0.37) PCSK9PTGS2NAAAARTSHR
SCHEMBL6972295 0.88 NAAA (0.43) NAAACES2CES1HTTEGFR
SCHEMBL11780094 0.88 NAAA (0.43) NAAACES2CES1HTTEGFR
SCHEMBL272469 0.85 AR (0.46) PTGS2NAAAARTSHRHTT
SCHEMBL27827259 0.85 PCSK9 (0.35) PCSK9PTGS2NAAAARTSHR
SCHEMBL272467 0.83 ESR1 (0.34) PCSK9PTGS2NAAACES2CES1
SCHEMBL2293538 0.80 PCSK9 (0.36) PCSK9PTGS2NAAAARTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed