SCHEMBL3481966

SCHEMBL3481966

C=C(CCCCC)C(C)O[SiH3]

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LMNA P02545 2/20 0.38
MAPT P10636 2/20 0.35
CES2 O00748 5/20 0.34
CES1 P23141 4/20 0.34
MAPK1 P28482 2/20 0.34
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
FAAH O00519 1/20 0.34
AKR1B1 P15121 1/20 0.33
DGKA P23743 1/20 0.32
PPARG P37231 4/20 0.32
PPARD Q03181 4/20 0.32
PPARA Q07869 4/20 0.32
TSHR P16473 3/20 0.32
GPR84 Q9NQS5 3/20 0.32
HDAC11 Q96DB2 3/20 0.32
ALDH1A1 P00352 2/20 0.32
TDP1 Q9NUW8 2/20 0.32
SLC22A6 Q4U2R8 1/20 0.32
SLC22A8 Q8TCC7 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481458 0.94 CES2 (0.32) LMNACES2CES1ALDH1A1
SCHEMBL3482691 0.85
SCHEMBL3481501 0.78 CES2 (0.33) LMNAMAPTCES2CES1MAPK1
SCHEMBL19057211 0.75 CES2 (0.42) LMNACES2CES1MAPK1MEN1
SCHEMBL25110725 0.73 CES2 (0.44) LMNACES2CES1MAPK1MEN1
SCHEMBL18660169 0.73 CES2 (0.44) LMNACES2CES1MAPK1MEN1
SCHEMBL23926079 0.73 CES2 (0.40) LMNAMAPTCES2CES1MAPK1
SCHEMBL18819438 0.73 CES2 (0.44) LMNACES2CES1MAPK1MEN1
SCHEMBL23844952 0.73 CES2 (0.44) LMNACES2CES1MAPK1MEN1
SCHEMBL3482450 0.71 CES2 (0.31) CES2CES1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed