⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL15734063 | 0.77 | — | — | |
| SCHEMBL15738566 | 0.74 | — | — | |
| SCHEMBL15733618 | 0.74 | — | — | |
| SCHEMBL15734325 | 0.74 | RIPK1 (0.36) | — | |
| SCHEMBL15736723 | 0.73 | — | — | |
| SCHEMBL15734443 | 0.73 | — | — | |
| SCHEMBL15735724 | 0.73 | — | — | |
| SCHEMBL15736974 | 0.73 | — | — | |
| SCHEMBL15736613 | 0.73 | — | — | |
| SCHEMBL15733676 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10727410-B2 | Surface modifier for transparent oxide electrode, surface-modified transparent oxide electrode, and method for producing surface-modified transparent oxide electrode | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-28 | — | — | US | disclosed |
| US-20180219160-A1 | BENZOBIS(THIADIAZOLE) DERIVATIVE, INK COMPRISING THE SAME, AND ORGANIC ELECTRONIC DEVICE USING THE SAME | UBE INDUSTRIES, LTD. (JP) | 2018-08-02 | — | — | US | disclosed |
| US-9947871-B2 | Surface modifier for metal electrode, surface-modified metal electrode, and method for producing surface-modified metal electrode | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-04-17 | — | — | US | disclosed |
| EP-3181569-A1 | BENZOBIS(THIADIAZOLE) DERIVATIVE, INK CONTAINING SAME, AND ORGANIC ELECTRONIC DEVICE USING SAME | UBE Industries, Ltd. (JP) | 2017-06-21 | — | — | EP | disclosed |
| US-20150295176-A1 | SURFACE MODIFIER FOR METAL ELECTRODE, SURFACE-MODIFIED METAL ELECTRODE, AND METHOD FOR PRODUCING SURFACE-MODIFIED METAL ELECTRODE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-10-15 | — | — | US | disclosed |
| EP-2927936-A1 | SURFACE MODIFYING AGENT FOR METAL ELECTRODES, SURFACE-MODIFIED METAL ELECTRODE, AND METHOD FOR PRODUCING SURFACE-MODIFIED METAL ELECTRODE | Shin-Etsu Chemical Co., Ltd. (JP) | 2015-10-07 | — | — | EP | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| EP-2738230-A1 | Surface modifier for transparent oxide electrode, surface-modified transparent oxide electrode, and method for producing surface-modified transparent oxide electrode | Shin-Etsu Chemical Co., Ltd. (JP) | 2014-06-04 | — | — | EP | disclosed |
| US-20140147628-A1 | Surface Modifier For Transparent Oxide Electrode, Surface-Modified Transparent Oxide Electrode, And Method For Producing Surface-Modified Transparent Oxide Electrode | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-05-29 | — | — | US | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |