SCHEMBL3482075

SCHEMBL3482075

COc1ccc(C(C)(C)O[SiH3])cc1

nearest known ligand 0.50

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
▸ CA1 P00915 2/20 0.50
▸ CA2 P00918 2/20 0.50
▸ CA7 P43166 2/20 0.50
▸ CA9 Q16790 2/20 0.50
▸ CA12 O43570 1/20 0.50
▸ CA14 Q9ULX7 1/20 0.50
▸ MAPT P10636 2/20 0.43
▸ ACHE P22303 1/20 0.42
▸ TDP1 Q9NUW8 5/20 0.42
▸ ALDH1A1 P00352 4/20 0.42
▸ MAPK1 P28482 4/20 0.42
▸ RECQL P46063 2/20 0.42
▸ LMNA P02545 1/20 0.42
▸ ALOX15 P16050 1/20 0.42
▸ APEX1 P27695 1/20 0.42
▸ HSD17B10 Q99714 1/20 0.42
▸ AOC3 Q16853 1/20 0.42
▸ CYP2A6 P11509 1/20 0.41
▸ L3MBTL1 Q9Y468 2/20 0.39
▸ KDM4E B2RXH2 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8672704 0.81 CA1 (0.55) CA1CA2CA7CA9CA12
SCHEMBL7617149 0.79 CA1 (0.52) CA1CA2CA7CA9CA12
SCHEMBL10997425 0.77 ALDH1A1 (0.58) CA1CA2CA7CA9CA12
SCHEMBL3482427 0.76 TSHR (0.52) CA1CA2CA7CA9MAPT
SCHEMBL23132612 0.76 CA1 (0.48) CA1CA2CA7CA9CA12
SCHEMBL22472153 0.76 CA1 (0.48) CA1CA2CA7CA9CA12
SCHEMBL1538395 0.75 CA1 (0.61) CA1CA2CA7CA9CA12
SCHEMBL83852 0.75 CA1 (0.61) CA1CA2CA7CA9CA12
SCHEMBL3098811 0.75 CA1 (0.61) CA1CA2CA7CA9CA12
SCHEMBL10112753 0.75 CA1 (0.61) CA1CA2CA7CA9CA12

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 — — EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 — — US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 — — US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 — — EP disclosed
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