⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4246363 | 0.84 | — | — | |
| SCHEMBL1524255 | 0.72 | — | — | |
| SCHEMBL3482053 | 0.72 | — | — | |
| SCHEMBL5009468 | 0.69 | — | — | |
| SCHEMBL4255153 | 0.69 | — | — | |
| SCHEMBL3482709 | 0.67 | MAPT (0.31) | — | |
| SCHEMBL4249038 | 0.65 | — | — | |
| SCHEMBL4533726 | 0.63 | — | — | |
| SCHEMBL5669841 | 0.61 | — | — | |
| SCHEMBL10481596 | 0.61 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8815339-B2 | Surface modifiers and process for surface modifications of particles of metal oxide using the same | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 2014-08-26 | — | — | US | claimed |
| EP-2062948-B1 | Surface modifier for metal oxide particles and method for modifying surface of metal oxide particles using the same | KOREA INST SCI & TECH (KR) | 2013-10-02 | — | — | EP | claimed |
| EP-2062948-A2 | Surface modifier for metal oxide particles and method for modifying surface of metal oxide particles using the same | Korea Institute of Science and Technology (KR) | 2009-05-27 | — | — | EP | claimed |
| US-20090130306-A1 | SURFACE MODIFIERS AND PROCESS FOR SURFACE MODIFICATIONS OF PARTICLES OF METAL OXIDE USING THE SAME | KOREA INSTITUTE OF SCIENCE AND TECHNLOGY (KR) | 2009-05-21 | — | — | US | claimed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8815339-B2 | Surface modifiers and process for surface modifications of particles of metal oxide using the same | KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (KR) | 2014-08-26 | — | — | US | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| EP-2062948-B1 | Surface modifier for metal oxide particles and method for modifying surface of metal oxide particles using the same | KOREA INST SCI & TECH (KR) | 2013-10-02 | — | — | EP | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| EP-2062948-A2 | Surface modifier for metal oxide particles and method for modifying surface of metal oxide particles using the same | Korea Institute of Science and Technology (KR) | 2009-05-27 | — | — | EP | disclosed |
| US-20090130306-A1 | SURFACE MODIFIERS AND PROCESS FOR SURFACE MODIFICATIONS OF PARTICLES OF METAL OXIDE USING THE SAME | KOREA INSTITUTE OF SCIENCE AND TECHNLOGY (KR) | 2009-05-21 | — | — | US | disclosed |