SCHEMBL3482104

SCHEMBL3482104

CCCCC=C[SiH](OC)OC

nearest known ligand 0.38

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.35
ALDH1A1 P00352 3/20 0.35
FAAH O00519 3/20 0.33
LPAR3 Q9UBY5 3/20 0.33
LPAR2 Q9HBW0 2/20 0.33
TRPV1 Q8NER1 2/20 0.33
LPAR1 Q92633 1/20 0.33
F7 P08709 1/20 0.33
F3 P13726 1/20 0.33
MEN1 O00255 1/20 0.31
MAPT P10636 1/20 0.31
PLA2G4A P47712 1/20 0.31
PAFAH1B2 P68402 1/20 0.31
KMT2A Q03164 1/20 0.31
MGLL Q99685 1/20 0.31
ABHD6 Q9BV23 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28299837 0.91 FAAH (0.45) FAAHTRPV1F7F3MEN1
SCHEMBL4199416 0.91 FAAH (0.45) FAAHTRPV1F7F3MEN1
SCHEMBL6909492 0.91 FAAH (0.45) FAAHTRPV1F7F3MEN1
SCHEMBL3482752 0.79 LPAR3 (0.33) TSHRALDH1A1FAAHLPAR3LPAR2
SCHEMBL28053263 0.79
SCHEMBL3481689 0.77 LPAR3 (0.35) TSHRALDH1A1FAAHLPAR3LPAR2
SCHEMBL8992283 0.74 TSHR (0.41) TSHRALDH1A1FAAHLPAR3LPAR2
SCHEMBL7935010 0.73 FAAH (0.45) FAAHTRPV1F7F3MEN1
SCHEMBL5968580 0.72
SCHEMBL8992206 0.72 TSHR (0.39) TSHRALDH1A1FAAHLPAR3LPAR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-109912736-A The preparation method of olefin polymerization catalysis external electron donor, catalyst system and polyolefin 中国科学院化学研究所 2019-06-21 CN claimed
CN-109912736-A The preparation method of olefin polymerization catalysis external electron donor, catalyst system and polyolefin 中国科学院化学研究所 2019-06-21 CN disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7291567-B2 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2007-11-06 US disclosed
US-20060024980-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR CORPORATION (JP) 2006-02-02 US disclosed
EP-1619226-A1 Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device JSR Corporation (JP) 2006-01-25 EP disclosed