SCHEMBL3482307

SCHEMBL3482307

CCCC[Si](Cl)(CCC)c1ccccc1

nearest known ligand 0.39

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TSHR P16473 2/20 0.34
LTA4H P09960 2/20 0.33
NR1H3 Q13133 1/20 0.33
PCSK9 Q8NBP7 1/20 0.33
NAAA Q02083 1/20 0.33
AR P10275 1/20 0.33
PTGS2 P35354 1/20 0.32
SMN1; SMN2 Q16637 1/20 0.32
HTT P42858 1/20 0.32
SIGMAR1 Q99720 1/20 0.32
CES2 O00748 1/20 0.32
CES1 P23141 1/20 0.32
CYP19A1 P11511 3/20 0.31
TLR8 Q9NR97 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706115 0.96 TSHR (0.36) TSHRLTA4HNR1H3PCSK9NAAA
SCHEMBL704073 0.92 TP53 (0.35) TSHRNR1H3CYP19A1
SCHEMBL18108087 0.90 KCNH2 (0.41) NAAASMN1; SMN2HTTCES2CES1
SCHEMBL18108436 0.90 KCNH2 (0.41) NAAASMN1; SMN2HTTCES2CES1
SCHEMBL3482605 0.88 TSHR (0.34) TSHRLTA4HNR1H3PCSK9NAAA
SCHEMBL18108094 0.88 KCNH2 (0.42) NAAASMN1; SMN2HTTCES2CES1
SCHEMBL18108092 0.88 KCNH2 (0.42) NAAASMN1; SMN2HTTCES2CES1
SCHEMBL1317397 0.88 KCNH2 (0.42) NAAASMN1; SMN2HTTCES2CES1
SCHEMBL707580 0.85 AR (0.41) NR1H3AR
SCHEMBL27521287 0.85 TLR8 (0.33) TSHRLTA4HNR1H3PCSK9NAAA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed