SCHEMBL707580

SCHEMBL707580

CCCC[Si](Cl)(CCCC)c1ccc([Si](Cl)(CCCC)CCCC)cc1

nearest known ligand 0.41

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
AR P10275 1/20 0.41
NR1H2 P55055 2/20 0.39
NR1H3 Q13133 2/20 0.39
ESR1 P03372 2/20 0.31
ESR2 Q92731 1/20 0.31
KCNH2 Q12809 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706115 0.89 TSHR (0.36) ARNR1H3
SCHEMBL3482307 0.85 TSHR (0.34) ARNR1H3
SCHEMBL702980 0.84 ESR1 (0.38) ARNR1H2NR1H3ESR1ESR2
SCHEMBL18108436 0.83 KCNH2 (0.41) KCNH2
SCHEMBL18108087 0.83 KCNH2 (0.41) KCNH2
SCHEMBL18108092 0.81 KCNH2 (0.42) KCNH2
SCHEMBL1317397 0.81 KCNH2 (0.42) KCNH2
SCHEMBL18108094 0.81 KCNH2 (0.42) KCNH2
SCHEMBL3482605 0.81 TSHR (0.34) ARNR1H3
SCHEMBL706381 0.80 NR1H2 (0.43) ARNR1H2NR1H3ESR1ESR2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed