Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Ammonia Solution, Strong SCHEMBL27777031 | 0.97 | — | — | |
| Methylamine SCHEMBL28154565 | 0.95 | — | — | |
| SCHEMBL3481877 | 0.95 | LMNA (0.30) | LMNATSHR | |
| SCHEMBL31276839 | 0.92 | TSHR (0.33) | TSHR | |
| SCHEMBL23930351 | 0.90 | TSHR (0.38) | LMNATSHR | |
| SCHEMBL29012019 | 0.90 | TSHR (0.38) | LMNATSHR | |
| SCHEMBL5572076 | 0.90 | TSHR (0.38) | LMNATSHR | |
| SCHEMBL15397910 | 0.90 | TSHR (0.38) | LMNATSHR | |
| SCHEMBL3482712 | 0.90 | — | — | |
| SCHEMBL5575100 | 0.90 | TSHR (0.38) | LMNATSHR |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| US-20100007031-A1 | AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LIMITED (JP) | 2010-01-14 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| CN-100415752-C | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORP (JP) | 2008-09-03 | — | — | CN | disclosed |
| CN-100335488-C | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORP (JP) | 2007-09-05 | — | — | CN | disclosed |
| US-7169327-B2 | Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof | JSR CORPORATION (JP) | 2007-01-30 | — | — | US | disclosed |
| CN-1803805-A | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORP (JP) | 2006-07-19 | — | — | CN | disclosed |
| CN-1793151-A | Insulating film material containing an organic silane compound, its production method and semiconductor device | TOSOH CORP (JP) | 2006-06-28 | — | — | CN | disclosed |
| US-7015256-B2 | Composition for forming photosensitive dielectric material, and transfer film, dielectric material and electronic parts using the same | JSR CORPORATION (JP) | 2006-03-21 | — | — | US | disclosed |
| US-20030151032-A1 | Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof | JSR CORPORATION (JP) | 2003-08-14 | — | — | US | disclosed |
| US-6548582-B2 | Inorganic particles, binder resin and at least one plasticizer selected from dialk(en)yl ester of alkanedioic acids, or alkoxyalkylylated esters therof, or 1,2-propanediol 1-alkanoates; flexibility | JSR CORPORATION (JP) | 2003-04-15 | — | — | US | disclosed |
| EP-0877003-B1 | Glass paste composition | JSR CORP (JP) | 2002-09-18 | — | — | EP | disclosed |
| US-20020035183-A1 | Inorgaic particle-containing composition, transfer film comprising the same and plasma display panel production process | JSR CORPORATION (JP) | 2002-03-21 | — | — | US | disclosed |
| US-20020016401-A1 | Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process | JSR CORPORATION (JP) | 2002-02-07 | — | — | US | disclosed |
| US-6339118-B1 | FOR FORMING BARRIER, ELECTRODE, RESISTOR, DIELECTRIC LAYER, PHOSPHOR, COLOR FILTER OR BLACK MATRIX OF PLASMA DISPLAY PANEL | JSR CORPORATION (JP) | 2002-01-15 | — | — | US | disclosed |
| EP-1003199-A2 | Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process | JSR Corporation (JP) | 2000-05-24 | — | — | EP | disclosed |
| US-6046121-A | MIXTURE COMPRISING GLASS POWDER, HYDROPHILIC ACRYLATE POLYMER BINDER RESIN IN A NONAQUEOUS SOLVENT HAVING BOILING POINT BETWEEN 100 AND 200 DEGREES C., AND A LOW VAPOR PRESSURE | JSR CORPORATION (JP) | 2000-04-04 | — | — | US | disclosed |
| EP-0987228-A2 | Glass paste composition, and transfer film and plasma display panel comprising the same | JSR Corporation (JP) | 2000-03-22 | — | — | EP | disclosed |
| EP-0877003-A2 | Glass paste composition | JSR Corporation (JP) | 1998-11-11 | — | — | EP | disclosed |