SCHEMBL3482597

SCHEMBL3482597

Cc1ccccc1-c1ccc([SiH](Cl)Cl)cc1

nearest known ligand 0.48

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 1/20 0.47
CA1 P00915 1/20 0.47
CA2 P00918 1/20 0.47
CA9 Q16790 1/20 0.47
ENPP3 O14638 1/20 0.44
ENPP1 P22413 1/20 0.44
NPC1 O15118 6/20 0.42
TSHR P16473 6/20 0.42
RAB9A P51151 5/20 0.42
HPGD P15428 2/20 0.42
HSD17B10 Q99714 2/20 0.42
SMN1; SMN2 Q16637 5/20 0.40
CYP1A2 P05177 3/20 0.40
CYP2C19 P33261 3/20 0.40
MEN1 O00255 1/20 0.40
KMT2A Q03164 1/20 0.40
ALDH1A1 P00352 2/20 0.39
HDAC8 Q9BY41 1/20 0.39
HDAC6 Q9UBN7 1/20 0.39
MCL1 Q07820 1/20 0.39

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29551674 0.82 CA12 (0.61) CA12CA1CA2CA9ENPP3
SCHEMBL3633054 0.82 CA12 (0.61) CA12CA1CA2CA9ENPP3
SCHEMBL4541662 0.79 CA12 (0.59) CA12CA1CA2CA9ENPP3
SCHEMBL29551646 0.79 CA12 (0.59) CA12CA1CA2CA9ENPP3
SCHEMBL8761767 0.76 ESR2 (0.53) HPGDCYP1A2CYP2C19ALDH1A1BACE1
SCHEMBL3481949 0.76 CA12 (0.44) CA12CA1CA2CA9ENPP3
SCHEMBL3482531 0.76 CA12 (0.44) CA12CA1CA2CA9ENPP3
SCHEMBL30493964 0.76 NPC1 (0.59) CA12CA1CA2CA9ENPP3
SCHEMBL14640154 0.76 CA12 (0.52) CA12CA1CA2CA9ENPP3
SCHEMBL172733 0.76 NPC1 (0.59) CA12CA1CA2CA9ENPP3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed