SCHEMBL3481949

SCHEMBL3481949

CO[SiH](OC)c1ccc(-c2ccccc2C)cc1

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
CA12 O43570 1/20 0.44
CA1 P00915 1/20 0.44
CA2 P00918 1/20 0.44
CA9 Q16790 1/20 0.44
ENPP3 O14638 1/20 0.38
ENPP1 P22413 1/20 0.38
PPARG P37231 1/20 0.37
PPARA Q07869 1/20 0.37
MCL1 Q07820 1/20 0.37
NR1H4 Q96RI1 1/20 0.36
TRPA1 O75762 1/20 0.36
CTSD P07339 1/20 0.36
BACE1 P56817 1/20 0.36
ABL1 P00519 1/20 0.35
ABCB1 P08183 1/20 0.35
BCR P11274 1/20 0.35
NPC1 O15118 1/20 0.34
CASP3 P42574 1/20 0.34
RAB9A P51151 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481561 0.80 CA12 (0.41) CA12CA1CA2CA9ENPP3
SCHEMBL3633054 0.78 CA12 (0.61) CA12CA1CA2CA9ENPP3
SCHEMBL29551674 0.78 CA12 (0.61) CA12CA1CA2CA9ENPP3
SCHEMBL3481480 0.78 CA12 (0.39) CA12CA1CA2CA9ENPP3
SCHEMBL27762993 0.77 ALDH1A1 (0.43) CA1CA2SMN1; SMN2
SCHEMBL4541662 0.76 CA12 (0.59) CA12CA1CA2CA9ENPP3
SCHEMBL29551646 0.76 CA12 (0.59) CA12CA1CA2CA9ENPP3
SCHEMBL3482597 0.76 CA12 (0.47) CA12CA1CA2CA9ENPP3
SCHEMBL20483376 0.74 PTGS2 (0.55)
SCHEMBL321832 0.74 ABL1 (0.62) CA12CA1CA2CA9NR1H4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed