SCHEMBL3482644

SCHEMBL3482644

CCCC[Si](CCC)(OCCC)OCCC

nearest known ligand 0.31

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ADRB2 P07550 1/20 0.31
ADRB1 P08588 1/20 0.31
ADRB3 P13945 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL22661047 0.98
SCHEMBL106078 0.95 ADRB2 (0.33) ADRB2ADRB1ADRB3
SCHEMBL19809363 0.93
SCHEMBL705366 0.92
SCHEMBL706031 0.92 ADRB2 (0.32) ADRB2ADRB1ADRB3
SCHEMBL706009 0.92 ADRB2 (0.32) ADRB2ADRB1ADRB3
SCHEMBL703182 0.92
SCHEMBL702386 0.92 ADRB2 (0.32) ADRB2ADRB1ADRB3
SCHEMBL5573896 0.91 TSHR (0.36)
SCHEMBL5574591 0.91 TSHR (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 29 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116075368-B Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2024-06-11 CN disclosed
CN-116075368-A Resin composition, cured product, method for producing same, and laminate 三菱化学株式会社 2023-05-05 CN disclosed
US-10696845-B2 Energy-sensitive resin composition TOKYO OHKA KOGYO CO., LTD. (JP) 2020-06-30 US disclosed
EP-3275940-B1 ENERGY-SENSITIVE RESIN COMPOSITION TOKYO OHKA KOGYO CO LTD (JP) 2019-12-18 EP disclosed
US-20190225804-A1 ENERGY-SENSITIVE RESIN COMPOSITION TOKYO OHKA KOGYO CO., LTD. (JP) 2019-07-25 US disclosed
EP-3275940-A1 ENERGY-SENSITIVE RESIN COMPOSITION Tokyo Ohka Kogyo Co., Ltd. (JP) 2018-01-31 EP disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-20030151032-A1 Composite particle for dielectrics, ultramicroparticulate composite resin particle, composition for forming dielectrics and use thereof JSR CORPORATION (JP) 2003-08-14 US disclosed
US-6548582-B2 Inorganic particles, binder resin and at least one plasticizer selected from dialk(en)yl ester of alkanedioic acids, or alkoxyalkylylated esters therof, or 1,2-propanediol 1-alkanoates; flexibility JSR CORPORATION (JP) 2003-04-15 US disclosed
EP-0877003-B1 Glass paste composition JSR CORP (JP) 2002-09-18 EP disclosed
US-20020035183-A1 Inorgaic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR CORPORATION (JP) 2002-03-21 US disclosed
US-20020016401-A1 Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR CORPORATION (JP) 2002-02-07 US disclosed
US-6339118-B1 FOR FORMING BARRIER, ELECTRODE, RESISTOR, DIELECTRIC LAYER, PHOSPHOR, COLOR FILTER OR BLACK MATRIX OF PLASMA DISPLAY PANEL JSR CORPORATION (JP) 2002-01-15 US disclosed
EP-1003199-A2 Inorganic particle-containing composition, transfer film comprising the same and plasma display panel production process JSR Corporation (JP) 2000-05-24 EP disclosed
US-6046121-A MIXTURE COMPRISING GLASS POWDER, HYDROPHILIC ACRYLATE POLYMER BINDER RESIN IN A NONAQUEOUS SOLVENT HAVING BOILING POINT BETWEEN 100 AND 200 DEGREES C., AND A LOW VAPOR PRESSURE JSR CORPORATION (JP) 2000-04-04 US disclosed
EP-0987228-A2 Glass paste composition, and transfer film and plasma display panel comprising the same JSR Corporation (JP) 2000-03-22 EP disclosed
EP-0877003-A2 Glass paste composition JSR Corporation (JP) 1998-11-11 EP disclosed