Predicted protein targets (top 2)
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28314988 | 0.93 | TSHR (0.34) | TSHRALDH1A1 | |
| SCHEMBL26922297 | 0.91 | TSHR (0.38) | TSHRALDH1A1 | |
| SCHEMBL26922373 | 0.91 | TSHR (0.38) | TSHRALDH1A1 | |
| SCHEMBL930830 | 0.91 | — | — | |
| SCHEMBL931491 | 0.91 | — | — | |
| SCHEMBL2246451 | 0.86 | — | — | |
| SCHEMBL931778 | 0.85 | — | — | |
| SCHEMBL3481679 | 0.84 | TSHR (0.32) | TSHRALDH1A1 | |
| SCHEMBL5834121 | 0.84 | TSHR (0.36) | TSHRALDH1A1 | |
| SCHEMBL11268105 | 0.83 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20250188615-A1 | Gapfill Methods and Processing Assemblies | ASM IP HOLDING B.V. (NL) | 2025-06-12 | — | — | US | disclosed |
| US-12252790-B2 | Gapfill methods and processing assemblies | ASM IP HOLDING B.V. (NL) | 2025-03-18 | — | — | US | disclosed |
| US-20240117494-A1 | Gapfill methods and processing assemblies | ASM IP HOLDING B.V. (NL) | 2024-04-11 | — | — | US | disclosed |
| CN-110183666-A | A kind of vinylsiloxane grafting containing hydrogen silicone oil and preparation method thereof | 安徽硅宝有机硅新材料有限公司 | 2019-08-30 | — | — | CN | disclosed |
| EP-2128897-B1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | FUJITSU LTD (JP) | 2015-05-06 | — | — | EP | disclosed |
| US-8791221-B2 | Addition-curable metallosiloxane compound | DAICEL CORPORATION (JP) | 2014-07-29 | — | — | US | disclosed |
| US-8716209-B2 | Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device | FUJITSU LIMITED (JP) | 2014-05-06 | — | — | US | disclosed |
| CN-101641767-B | Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device | FUJITSU LTD | 2013-10-30 | — | — | CN | disclosed |
| EP-2650319-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | Daicel Corporation (JP) | 2013-10-16 | — | — | EP | disclosed |
| US-20130267653-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | DAICEL CORPORATION (JP) | 2013-10-10 | — | — | US | disclosed |
| EP-2128897-A1 | SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE | Fujitsu Limited (JP) | 2009-12-02 | — | — | EP | disclosed |
| US-20080274627-A1 | SILICON-CONTAINING FILM, FORMING MATERIAL, MAKING METHOD, AND SEMICONDUCTOR DEVICE | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-11-06 | — | — | US | disclosed |
| US-7291567-B2 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2007-11-06 | — | — | US | disclosed |
| CN-1250557-C | Process for preparing alkoxysilanes | TOAGOSEI CO LTD (JP) | 2006-04-12 | — | — | CN | disclosed |
| US-7005532-B2 | Process of producing alkoxysilanes | TOAGOSEI CO., LTD. (JP) | 2006-02-28 | — | — | US | disclosed |
| US-20060024980-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR CORPORATION (JP) | 2006-02-02 | — | — | US | disclosed |
| EP-1619226-A1 | Silica-based film, method of forming the same, composition for forming insulating film for semiconductor device, interconnect structure, and semiconductor device | JSR Corporation (JP) | 2006-01-25 | — | — | EP | disclosed |
| US-20050020845-A1 | Process of producing alkoxysilanes | TOAGOSEI CO., LTD. (JP) | 2005-01-27 | — | — | US | disclosed |
| CN-1555380-A | Process for preparing alkoxysilanes | 东亚合成株式会社 | 2004-12-15 | — | — | CN | disclosed |
| EP-1428828-A1 | PROCESS FOR PREPARATION OF ALKOXYSILANES | TOAGOSEI CO., LTD. (JP) | 2004-06-16 | — | — | EP | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20080274627-A1 | SILICON-CONTAINING FILM, FORMING MATERIAL, MAKING METHOD, AND SEMICONDUCTOR DEVICE | SIK1, SIK3, SIK2 | TSHR 4806/4885ALDH1A1 3812/4885 |
| US-20130267653-A1 | ADDITION-CURABLE METALLOSILOXANE COMPOUND | B2M, MSI2, MNS1 | TSHR 4702/4885ALDH1A1 2073/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.