SCHEMBL3481679

SCHEMBL3481679

C=C[Si](CCCC)(OCCC)OCCC

nearest known ligand 0.32

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
TSHR P16473 3/20 0.32
HPGD P15428 1/20 0.32
ALDH1A1 P00352 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL930966 0.93
SCHEMBL931201 0.93
SCHEMBL5834121 0.91 TSHR (0.36) TSHRHPGDALDH1A1
SCHEMBL931781 0.89
SCHEMBL931795 0.87 TSHR (0.36) TSHRHPGDALDH1A1
SCHEMBL931827 0.87 TSHR (0.36) TSHRHPGDALDH1A1
SCHEMBL2240707 0.86
SCHEMBL930777 0.84 TSHR (0.38) TSHRHPGDALDH1A1
SCHEMBL3482748 0.84 TSHR (0.33) TSHRALDH1A1
SCHEMBL28436632 0.83 TSHR (0.37) TSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7005532-B2 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2006-02-28 US disclosed
US-20050020845-A1 Process of producing alkoxysilanes TOAGOSEI CO., LTD. (JP) 2005-01-27 US disclosed
EP-1428828-A1 PROCESS FOR PREPARATION OF ALKOXYSILANES TOAGOSEI CO., LTD. (JP) 2004-06-16 EP disclosed