SCHEMBL3482750

SCHEMBL3482750

C=C(CCCC)[SiH](OCC)OCC

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 2/20 0.33
CES1 P23141 2/20 0.33
CES2 O00748 1/20 0.33
TP53 P04637 1/20 0.31
CA1 P00915 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3481825 0.86
SCHEMBL3481686 0.84 CES2 (0.32) ALDH1A1CES1CES2TP53
SCHEMBL3482102 0.79 CES1 (0.35) ALDH1A1CES1CES2TP53CA1
SCHEMBL1270674 0.75
SCHEMBL3447044 0.72
SCHEMBL4074014 0.71
SCHEMBL1263468 0.71 HSD17B10 (0.35) ALDH1A1
SCHEMBL4199411 0.71 SPHK2 (0.41) ALDH1A1CES1CES2
SCHEMBL6909488 0.71 SPHK2 (0.41) ALDH1A1CES1CES2
SCHEMBL3482908 0.70

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20250188615-A1 Gapfill Methods and Processing Assemblies ASM IP HOLDING B.V. (NL) 2025-06-12 US disclosed
US-12252790-B2 Gapfill methods and processing assemblies ASM IP HOLDING B.V. (NL) 2025-03-18 US disclosed
US-20240117494-A1 Gapfill methods and processing assemblies ASM IP HOLDING B.V. (NL) 2024-04-11 US disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed