SCHEMBL3482779

SCHEMBL3482779

C=CC(CCC)(CCC)O[SiH3]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL3482214 0.91 ALDH1A1 (0.31)
SCHEMBL3482177 0.91
SCHEMBL3482186 0.86 TSHR (0.33)
SCHEMBL15302563 0.84 TSHR (0.34)
SCHEMBL2166951 0.79
SCHEMBL3482595 0.78 ALDH1A1 (0.31)
SCHEMBL3482059 0.75
SCHEMBL27697856 0.75
SCHEMBL9657192 0.75
SCHEMBL3482437 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 14 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-116234874-B Curable composition 株式会社钟化 2024-07-19 CN disclosed
CN-116234874-A Curable composition 株式会社钟化 2023-06-06 CN disclosed
WO-2022075386-A1 CURABLE COMPOSITION 株式会社カネカ 2022-04-14 WO disclosed
EP-2128897-B1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LTD (JP) 2015-05-06 EP disclosed
US-8791221-B2 Addition-curable metallosiloxane compound DAICEL CORPORATION (JP) 2014-07-29 US disclosed
US-8716209-B2 Agent for post-etch treatment of silicon dielectric film, method of manufacturing semiconductor device, and semiconductor device FUJITSU LIMITED (JP) 2014-05-06 US disclosed
EP-2650319-A1 ADDITION-CURABLE METALLOSILOXANE COMPOUND Daicel Corporation (JP) 2013-10-16 EP disclosed
US-20130267653-A1 ADDITION-CURABLE METALLOSILOXANE COMPOUND DAICEL CORPORATION (JP) 2013-10-10 US disclosed
US-20100007031-A1 AGENT FOR POST-ETCH TREATMENT OF SILICON DIELECTRIC FILM, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJITSU LIMITED (JP) 2010-01-14 US disclosed
EP-2128897-A1 SILICON DIELECTRIC TREATING AGENT FOR USE AFTER ETCHING, PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE Fujitsu Limited (JP) 2009-12-02 EP disclosed
US-7604866-B2 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2009-10-20 US disclosed
US-20060269724-A1 Comprising silica particles and at least one binder compound; good mechanical strength and abrasion resistance ASAHI KASEI KABUSHIKI KAISHA (JP) 2006-11-30 US disclosed
CN-1809764-A Antireflective film ASAHI CHEMICAL IND (JP) 2006-07-26 CN disclosed
US-20040077757-A1 Coating composition for use in producing an insulating thin film ASAHI KASEI KABUSHIKI KAISHA (JP) 2004-04-22 US disclosed