⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Arsenic SCHEMBL27729829 | 0.87 | — | — | |
| Arsenic SCHEMBL27634680 | 0.87 | — | — | |
| Arsenic SCHEMBL144658 | 0.82 | — | — | |
| SCHEMBL4073096 | 0.82 | — | — | |
| Arsenic SCHEMBL944434 | 0.82 | — | — | |
| Arsenic SCHEMBL2762695 | 0.82 | — | — | |
| SCHEMBL25252953 | 0.67 | — | — | |
| SCHEMBL20819311 | 0.67 | — | — | |
| Water SCHEMBL21647198 | 0.67 | — | — | |
| Arsenic SCHEMBL7155970 | 0.67 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 38 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-110176533-A | A kind of spin electric device of photoresponse and preparation method thereof | 电子科技大学 | 2019-08-27 | — | — | CN | claimed |
| CN-102318179-B | For generation of the device and method of electric power | LANDA LABS (2012) LTD. (IL) | 2016-02-03 | — | — | CN | claimed |
| CN-102318179-A | Be used to produce the device and method of electric power | LANDA LAB LTD | 2012-01-11 | — | — | CN | claimed |
| CN-100459149-C | Conduction control device | HITACHI LTD (JP) | 2009-02-04 | — | — | CN | claimed |
| CN-100412536-C | Method for measuring gallium-manganese-arsenic-iron magnetic transition temperature of rare-magnetic semiconductor without magnetic field | INST OF SEMICONDUCTORS CAS (CN) | 2008-08-20 | — | — | CN | claimed |
| CN-1815213-A | Method for measuring gallium-manganese-arsenic-iron magnetic transition temperature of rare-magnetic semiconductor without magnetic field | SEMICONDUCTOR INST CN ACAD (CN) | 2006-08-09 | — | — | CN | claimed |
| CN-1216406-C | Magnetic p-n junction thin film material and mfg. method thereof | INST SEMICONDUCTORS CAS (CN) | 2005-08-24 | — | — | CN | claimed |
| CN-1174467-C | Method for mfg. semiconductor/magnet/semicondustor threelayer structure | 中国科学院半导体研究所 | 2004-11-03 | — | — | CN | claimed |
| CN-1452216-A | Magnetic p-n junction thin film material and mfg. method thereof | INST SEMICONDUCTORS CAS (CN) | 2003-10-29 | — | — | CN | claimed |
| CN-1421878-A | Prepn of ferromagnetic semiconductor with graded components | INST OF SEMICONDUCTORS CAS (CN) | 2003-06-04 | — | — | CN | claimed |
| CN-1402305-A | Method for mfg. semiconductor/magnet/semicondustor threelayer structure | INST SEMICONDUCTORS CAS (CN) | 2003-03-12 | — | — | CN | claimed |
| CN-119451550-A | Spintronic device and method of making the same | 广东光翼智造科技有限公司 | 2025-02-14 | — | — | CN | disclosed |
| CN-116801703-A | Magnetic tunnel junction and magnetic random access memory device | 上海集成电路材料研究院有限公司 | 2023-09-22 | — | — | CN | disclosed |
| CN-116801701-A | Manufacturing method of magnetic memory device | 中国科学院上海微系统与信息技术研究所 | 2023-09-22 | — | — | CN | disclosed |
| CN-110176533-A | A kind of spin electric device of photoresponse and preparation method thereof | 电子科技大学 | 2019-08-27 | — | — | CN | disclosed |
| CN-1452216-A | Magnetic p-n junction thin film material and mfg. method thereof | INST SEMICONDUCTORS CAS (CN) | 2003-10-29 | — | — | CN | disclosed |
| CN-1421878-A | Prepn of ferromagnetic semiconductor with graded components | INST OF SEMICONDUCTORS CAS (CN) | 2003-06-04 | — | — | CN | disclosed |
| CN-1402305-A | Method for mfg. semiconductor/magnet/semicondustor threelayer structure | INST SEMICONDUCTORS CAS (CN) | 2003-03-12 | — | — | CN | disclosed |
| US-4400221-A | Fabrication of gallium arsenide-germanium heteroface junction device | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE (US) | 1983-08-23 | — | — | US | disclosed |
| US-4385198-A | Gallium arsenide-germanium heteroface junction device | THE UNITED STATES OF AMERICA AS REPRESENTED BY THE SECRETARY OF THE AIR FORCE (US) | 1983-05-24 | — | — | US | disclosed |