⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28275802 | 0.82 | — | — | |
| SCHEMBL28198496 | 0.82 | — | — | |
| SCHEMBL439429 | 0.82 | — | — | |
| Hydrogen Sulfide SCHEMBL29140422 | 0.82 | — | — | |
| Arsenic SCHEMBL3487092 | 0.82 | — | — | |
| SCHEMBL25252953 | 0.82 | — | — | |
| SCHEMBL28387231 | 0.82 | — | — | |
| SCHEMBL3487368 | 0.82 | — | — | |
| SCHEMBL20819311 | 0.82 | — | — | |
| SCHEMBL29136597 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 130 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119430898-A | Manganese-gallium ferrite for high frequency and preparation method and application thereof | 苏州天源磁业股份有限公司 | 2025-02-14 | — | — | CN | claimed |
| CN-116592919-A | Self-biased d36 mode magneto-electric sensor and manufacturing method thereof | 西安交通大学 | 2023-08-15 | — | — | CN | claimed |
| CN-116456807-A | SOT-MRAM memory cell and preparation method thereof | 中国科学院微电子研究所 | 2023-07-18 | — | — | CN | claimed |
| CN-116387941-A | PDE terahertz emission source and emission method | 电子科技大学 | 2023-07-04 | — | — | CN | claimed |
| CN-113381782-B | Radio frequency front end module, method and device for preparing antenna and filter | 清华大学 | 2023-06-27 | — | — | CN | claimed |
| CN-113938216-B | Underwater communication system based on very-low-frequency magnetoelectric antenna and manufacturing method | 西安交通大学 | 2022-11-04 | — | — | CN | claimed |
| CN-113381782-A | Radio frequency front-end module, method and device for preparing antenna and filter | 清华大学 | 2021-09-10 | — | — | CN | claimed |
| CN-112195381-B | Preparation method of Sr-doped manganese-gallium alloy and high-coercivity nanocrystalline magnet thereof | 北京工业大学 | 2021-08-13 | — | — | CN | claimed |
| CN-112195381-A | Preparation method of Sr-doped manganese-gallium alloy and high-coercivity nanocrystalline magnet thereof | 北京工业大学 | 2021-01-08 | — | — | CN | claimed |
| CN-111261772-A | Magnetic tunnel junction, magnetic memory and forming method thereof | 北京航空航天大学 | 2020-06-09 | — | — | CN | claimed |
| US-20150194963-A1 | HIGH SPEED PRECESSIONALLY SWITCHED MAGNETIC LOGIC | INTEL CORPORATION | 2015-07-09 | — | — | US | claimed |
| CN-104737318-A | High speed precessionally switched magnetic logic | INTEL CORP | 2015-06-24 | — | — | CN | claimed |
| US-8988109-B2 | High speed precessionally switched magnetic logic | INTEL CORPORATION (US) | 2015-03-24 | — | — | US | claimed |
| WO-2014078025-A1 | HIGH SPEED PRECESSIONALLY SWITCHED MAGNETIC LOGIC | INTEL CORPORATION (US) | 2014-05-22 | — | — | WO | claimed |
| US-20140139265-A1 | HIGH SPEED PRECESSIONALLY SWITCHED MAGNETIC LOGIC | INTEL CORPORATION | 2014-05-22 | — | — | US | claimed |
| CN-102719692-A | Preparation method of quasi-continuous pore nickel-manganese-gallium foam alloy | HARBIN INST OF TECHNOLOGY | 2012-10-10 | — | — | CN | claimed |
| US-20090009058-A1 | LIGHT-EMITTING MATERIAL, LIGHT EMITTING-ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING THEREOF | SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) | 2009-01-08 | — | — | US | claimed |
| EP-2011847-A1 | Light-emitting material, light emitting-element, light-emitting device, and electronic device and method for manufacturing thereof | Semiconductor Energy Laboratory Co, Ltd. (JP) | 2009-01-07 | — | — | EP | claimed |
| CN-1772973-A | Heat balance growing method for magnetic semiconductor gallium, manganese and antimony single crystal | INST OF SEMICONDUCTORS CAS (CN) | 2006-05-17 | — | — | CN | claimed |
| US-6451959-B1 | Solid titanium compound obtained by dehydro-drying a hydrolyzate obtained by hydrolysis of a titanium halide | MITSUI CHEMICALS, INC. (JP) | 2002-09-17 | — | — | US | claimed |