⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL2961798 | 0.94 | — | — | |
| SCHEMBL17717605 | 0.78 | — | — | |
| SCHEMBL20377483 | 0.71 | — | — | |
| SCHEMBL16284810 | 0.69 | — | — | |
| SCHEMBL21882118 | 0.66 | — | — | |
| SCHEMBL21882130 | 0.66 | — | — | |
| Trimethylammonium SCHEMBL27301699 | 0.63 | — | — | |
| SCHEMBL17045940 | 0.62 | — | — | |
| SCHEMBL968099 | 0.62 | — | — | |
| SCHEMBL2100455 | 0.59 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1241 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20260136856-A1 | METHOD AND SYSTEM FOR FORMING SILICON NITRIDE ON A SIDEWALL OF A FEATURE | ASM IP HOLDING BV (NL) | 2026-05-14 | — | — | US | claimed |
| US-12628578-B2 | Substrate processing method | ASM IP HOLDING B.V. (NL) | 2026-05-12 | — | — | US | claimed |
| US-20260123302-A1 | METHOD AND APPARATUS FOR DEPOSITING A CARBON-CONTAINING MATERIAL | ASM IP HOLDING BV (NL) | 2026-04-30 | — | — | US | claimed |
| US-20260042880-A1 | CONTROLLABLE EXTENSION OF FLEXIBLE OLIGOMERIC DIOLS AND METHODS THEREOF | THE BOEING COMPANY (US) | 2026-02-12 | — | — | US | claimed |
| EP-4692167-A1 | CONTROLLABLE EXTENSION OF FLEXIBLE OLIGOMERIC DIOLS AND METHODS THEREOF | The Boeing Company (US) | 2026-02-11 | — | — | EP | claimed |
| US-12550644-B2 | Method and system for forming silicon nitride on a sidewall of a feature | ASM IP HOLDING B.V. (NL) | 2026-02-10 | — | — | US | claimed |
| US-12546000-B2 | Substrate processing method | ASM IP HOLDING B.V. (NL) | 2026-02-10 | — | — | US | claimed |
| US-20260035783-A1 | SIN FILM EMBEDDING METHOD AND FILM FORMATION APPARATUS | TOKYO ELECTRON LTD (JP) | 2026-02-05 | — | — | US | claimed |
| US-12518966-B2 | Selective plasma enhanced atomic layer deposition | VERSUM MATERIALS US, LLC (US) | 2026-01-06 | — | — | US | claimed |
| US-20260002264-A1 | SUBSTRATE PROCESSING METHOD | ASM IP HOLDING BV (NL) | 2026-01-01 | — | — | US | claimed |
| WO-2009055340-A1 | METHODS FOR FORMING A SILICON OXIDE LAYER OVER A SUBSTRATE | APPLIED MATERIALS, INC. (US) | 2009-04-30 | — | — | WO | claimed |
| US-20090104791-A1 | Methods for Forming a Silicon Oxide Layer Over a Substrate | APPLIED MATERIALS, INC. A DELAWARE CORPORATION (US) | 2009-04-23 | — | — | US | claimed |
| WO-2009039251-A1 | METHOD OF FORMING SILICON-CONTAINING FILMS | L'AIR LIQUIDE - SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2009-03-26 | — | — | WO | claimed |
| US-20090075490-A1 | METHOD OF FORMING SILICON-CONTAINING FILMS | L'AIR LIQUITE SOCIETE ANONYME POUR L'ETUDE ET L'EXPLOITATION DES PROCEDES GEORGES CLAUDE (FR) | 2009-03-19 | — | — | US | claimed |
| US-20080282535-A1 | METHOD OF FABRICATING AN INTEGRATED CIRCUIT | QIMONDA AG (DE) | 2008-11-20 | — | — | US | claimed |
| US-20080166491-A1 | Mixing raw-material fluid with carrier fluid within chamber to form supercritical condition, producing active-state in raw-material fluid of supercritical fluid by catalytic reaction, and blowing fluid to substrate to form solid film thereon; forms thin film uniformly over wide area | Watanabe, Eizo (JP) | 2008-07-10 | — | — | US | claimed |
| EP-1918417-A1 | METHOD OF FORMING FILM AND APPARATUS FOR FILM FORMATION | Tokyo Electron Limited (TEL) (JP) | 2008-05-07 | — | — | EP | claimed |
| US-20080081104-A1 | chemical vapor deposition; supplying an aminosilane gas to a substrate surface forming absorption layer containing silicon, supplying oxidizing gas selected from oxygen, ozone, nitrogen oxide, nitrogen dioxide, dinitrogen oxide, and water vapor to oxidize silicon to form SiO2 film on target substrate | TOKYO ELECTRON LIMITED (JP) | 2008-04-03 | — | — | US | claimed |
| US-5837056-A | Method for growing III-V group compound semiconductor crystal | FUJITSU LIMITED (JP) | 1998-11-17 | — | — | US | claimed |
| US-5656076-A | USING SILICON DOPANT THAT INCLUDES A SILICON ATOM BONDED TO AN ALKYL AND A HYDROGEN | FUJITSU LIMITED (JP) | 1997-08-12 | — | — | US | claimed |