SCHEMBL35656

SCHEMBL35656

CCCN([SiH3])CCC

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Hydrochloric Acid SCHEMBL8719670 0.96
SCHEMBL18991277 0.87
SCHEMBL18991387 0.85
SCHEMBL20199344 0.84 HRH3 (0.31)
SCHEMBL18991174 0.82 DNM1 (0.50)
SCHEMBL18991601 0.82 DNM1 (0.50)
SCHEMBL2546028 0.77 TSHR (0.40)
SCHEMBL18991299 0.75
SCHEMBL18991304 0.74 DNM1 (0.50)
SCHEMBL2030909 0.73

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 552 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260035783-A1 SIN FILM EMBEDDING METHOD AND FILM FORMATION APPARATUS TOKYO ELECTRON LTD (JP) 2026-02-05 US claimed
US-20250243398-A1 IRON CONTROL AS PART OF A WELL TREATMENT USING TIME-RELEASED AGENTS FLEX-CHEM HOLDING COMPANY, LLC (US) 2025-07-31 US claimed
US-12344933-B2 SiN film embedding method TOKYO ELECTRON LIMITED (JP) 2025-07-01 US claimed
US-20250112345-A1 PROTECTION METHOD AND DEVICE FOR BATTERY COMPONENTS, SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK, AND ELECTRICAL APPARATUS CONTEMPORARY AMPEREX TECHNOLOGY CO., LIMITED (CN) 2025-04-03 US claimed
EP-4518016-A1 BATTERY COMPONENT PROTECTION METHOD AND DEVICE, SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK, AND ELECTRIC APPARATUS Contemporary Amperex Technology (Hong Kong) Limited (HK) 2025-03-05 EP claimed
US-20250054747-A1 CONFORMAL DEPOSITION OF SILICON NITRIDE LAM RES CORP (US) 2025-02-13 US claimed
US-12150295-B2 Method for manufacturing a memory using a plurality of sacrificial pillars CHANGXIN MEMORY TECHNOLOGIES, INC. (CN) 2024-11-19 US claimed
CN-118402039-A Conformal deposition of silicon nitride 朗姆研究公司 2024-07-26 CN claimed
CN-114725018-B Memory and preparation method thereof 长鑫存储技术有限公司 2024-06-21 CN claimed
EP-4379946-A1 PROTECTION METHOD AND DEVICE FOR SECONDARY BATTERY, SECONDARY BATTERY, BATTERY MODULE, BATTERY PACK, AND ELECTRIC DEVICE Contemporary Amperex Technology Co., Limited (CN) 2024-06-05 EP claimed
US-20120164844-A1 METHOD AND APPARATUS FOR FORMING OXIDE FILM ON CARBON FILM TOKYO ELECTRON LIMITED (JP) 2012-06-28 US claimed
US-20120164842-A1 TRENCH EMBEDDING METHOD AND FILM-FORMING APPARATUS TOKYO ELECTRON LIMITED (JP) 2012-06-28 US claimed
US-20120103518-A1 FILM FORMATION APPARATUS TOKYO ELECTRON LIMITED (JP) 2012-05-03 US claimed
US-8168375-B2 Patterning method TOKYO ELECTRON LIMITED (JP) 2012-05-01 US claimed
US-20120028437-A1 TRENCH-FILLING METHOD AND FILM-FORMING SYSTEM TOKYO ELECTRON LIMITED (JP) 2012-02-02 US claimed
US-20110237082-A1 MICRO PATTERN FORMING METHOD TOKYO ELECTRON LIMITED (JP) 2011-09-29 US claimed
US-20110195580-A1 METHOD FOR FORMING LAMINATED STRUCTURE INCLUDING AMORPHOUS CARBON FILM TOKYO ELECTRON LIMITED (JP) 2011-08-11 US claimed
US-7989354-B2 Patterning method TOKYO ELECTRON LIMITED (JP) 2011-08-02 US claimed
US-20100130015-A1 PATTERNING METHOD TOKYO ELECTRON LIMITED (JP) 2010-05-27 US claimed
US-20100112496-A1 PATTERNING METHOD TOKYO ELECTRON LIMITED (JP) 2010-05-06 US claimed