Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | FABP7 | O15540 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL25454344 | 0.93 | — | — | |
| SCHEMBL13461803 | 0.92 | — | — | |
| SCHEMBL13461806 | 0.92 | — | — | |
| SCHEMBL965906 | 0.91 | FABP7 (0.30) | FABP7 | |
| SCHEMBL13461816 | 0.91 | — | — | |
| SCHEMBL13435915 | 0.91 | FABP7 (0.33) | FABP7 | |
| SCHEMBL3583283 | 0.90 | ALDH1A1 (0.30) | — | |
| SCHEMBL3576077 | 0.90 | FABP7 (0.33) | FABP7 | |
| SCHEMBL10134898 | 0.89 | — | — | |
| SCHEMBL1141598 | 0.89 | NPC1 (0.33) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-9760010-B2 | Patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-09-12 | — | — | US | disclosed |
| US-20160363866-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-15 | — | — | US | disclosed |
| US-20160363866-A1 | PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-12-15 | — | — | US | disclosed |
| EP-2950143-B1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHINETSU CHEMICAL CO (JP) | 2016-07-20 | — | — | EP | disclosed |
| US-20150346600-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-03 | — | — | US | disclosed |
| US-20150346600-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-03 | — | — | US | disclosed |
| EP-2950143-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2015-12-02 | — | — | EP | disclosed |
| US-8933251-B2 | Fluorinated monomer of cyclic acetal structure, polymer, resist protective coating composition, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-01-13 | — | — | US | disclosed |
| US-20130231491-A1 | FLUORINATED MONOMER OF CYCLIC ACETAL STRUCTURE, POLYMER, RESIST PROTECTIVE COATING COMPOSITION, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2013-09-05 | — | — | US | disclosed |
| US-20080118860-A1 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-22 | — | — | US | disclosed |
| US-20080118860-A1 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-22 | — | — | US | disclosed |
| US-20080118860-A1 | Polymer, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2008-05-22 | — | — | US | disclosed |
| US-20070264592-A1 | Resist polymer, preparing method, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070264592-A1 | Resist polymer, preparing method, resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2007-11-15 | — | — | US | disclosed |
| US-20070207408-A1 | Polymers, positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-09-06 | — | — | US | disclosed |
| US-20070207408-A1 | Polymers, positive resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. | 2007-09-06 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |
| US-20070160929-A1 | photoresists; photomasks; heat treatment; high resolution and prevent dissolution in water and penetration of water when processed by immersion lithography | SHIN-ETSU CHEMICAL CO., LTD. | 2007-07-12 | — | — | US | disclosed |