SCHEMBL35842

SCHEMBL35842

[Hf+4].[Hf+4].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29353810 1.00
SCHEMBL31734810 0.87
SCHEMBL30516525 0.87
SCHEMBL18815477 0.87
SCHEMBL2239554 0.87
SCHEMBL4807859 0.87
SCHEMBL11654272 0.82
SCHEMBL6931147 0.82
SCHEMBL34398 0.82
SCHEMBL7170381 0.82

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 7542 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20260068548-A1 RESISTIVE SWITCHING STRUCTURE TO IMPROVE RRAM TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2026-03-05 US claimed
US-12568812-B2 Back-end-of-line CMOS inverter having twin channels and one gate electrode and methods of forming the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) 2026-03-03 US claimed
US-20260047175-A1 SEMICONDUCTOR DEVICES HAVING IMPROVED CURRENT/VOLTAGE CHARACTERISTICS AND METHODS OF FORMING THE SAME TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-02-12 US claimed
US-20250359156-A1 TRANSISTOR STRUCTURE HAVING REDUCED CONTACT RESISTANCE AND METHODS OF FORMING THE SAME TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-20 US claimed
US-20250357321-A1 BACK-END-OF-LINE CMOS INVERTER HAVING REDUCED SIZE AND REDUCED SHORT-CHANNEL EFFECTS AND METHODS OF FORMING THE SAME TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-20 US claimed
US-20250359079-A1 MIM CAPACITOR AND METHOD OF FORMING THE SAME TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-20 US claimed
US-20250359281-A1 GATE STRUCTURE WITH OXYGEN BARRIER AND METHODS FOR MANUFACTURING THE SAME TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-20 US claimed
US-20250351554-A1 HIGH DENSITY CAPACITOR AND METHOD OF MAKING THE SAME TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-13 US claimed
US-20250344488-A1 HIGH VOLTAGE DEVICE TAIWAN SEMICONDUCTOR MFG CO LTD (TW) 2025-11-06 US claimed
US-12394707-B2 Back-end-of-line CMOS inverter having reduced size and reduced short-channel effects and methods of forming the same TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED (TW) 2025-08-19 US claimed
EP-1547169-A1 PASSIVATION LAYER Microemissive Displays Limited (GB) 2005-06-29 EP claimed
US-20040190141-A1 Durable silver thin film coating for diffraction gratings THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 2004-09-30 US claimed
WO-2004030115-A1 PASSIVATION LAYER MICROEMISSIVE DISPLAYS LIMITED (GB) 2004-04-08 WO claimed
WO-2001082390-A9 THIN FILM ENCAPSULATION OF ORGANIC LIGHT EMITTING DIODE DEVICES EMAGIN CORP (US) 2003-01-09 WO claimed
WO-2002071506-A1 THIN FILM ENCAPSULATION OF ORGANIC LIGHT EMITTING DIODE DEVICES EMAGIN CORPORATION (US) 2002-09-12 WO claimed
US-20020003403-A1 Thin film encapsulation of organic light emitting diode devices EMAGIN CORPORATION 2002-01-10 US claimed
US-20010052752-A1 Thin film encapsulation of organic light emitting diode devices EMAGIN CORPORATION 2001-12-20 US claimed
WO-2001082390-A1 THIN FILM ENCAPSULATION OF ORGANIC LIGHT EMITTING DIODE DEVICES EMAGIN CORPORATION (US) 2001-11-01 WO claimed
US-6078425-A Durable silver coating for mirrors THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 2000-06-20 US claimed
WO-1999064900-A1 DURABLE SILVER COATING FOR MIRRORS THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) 1999-12-16 WO claimed