SCHEMBL3590719

SCHEMBL3590719

O=NCC(=O)O.[Ru]

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL379201 0.96
SCHEMBL14915801 0.93
SCHEMBL10687258 0.71
SCHEMBL9912286 0.69
SCHEMBL708170 0.69
SCHEMBL3078982 0.69 LMNA (0.40)
SCHEMBL1247492 0.69 EGLN1 (0.50)
SCHEMBL2959030 0.69
SCHEMBL15360267 0.67
SCHEMBL11480139 0.65

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9359223-B2 Method for producing thin film electrodes UCHICAGO ARGONNE, LLC (US) 2016-06-07 US claimed
US-20130071670-A1 METHOD FOR PRODUCING THIN FILM ELECTRODES UCHICAGO ARGONNE, LLC (US) 2013-03-21 US claimed
CN-118949976-B Porous IrRu oxide catalyst, preparation method and catalytic application 天津大学 2025-01-28 CN disclosed
US-20210143442-A1 CATALYST FOR FUEL CELL AND MANUFACTURING METHOD THEREOF HYUNDAI MOBIS CO., LTD. (KR) 2021-05-13 US disclosed
CN-112786902-A Catalyst for fuel cell and method for producing the same 现代摩比斯株式会社 2021-05-11 CN disclosed
CN-107431013-A Etching mask, etching mask precursor, the manufacture method of the manufacture method of oxide skin(coating) and thin film transistor (TFT) 国立大学法人北陆先端科学技术大学院大学 2017-12-01 CN disclosed
US-9178022-B2 Precursor composition and method for forming amorphous conductive oxide film JAPAN SCIENCE AND TECHNOLOGY AGENCY (JP) 2015-11-03 US disclosed
US-20130112973-A1 PRECURSOR COMPOSITION AND METHOD FOR FORMING AMORPHOUS CONDUCTIVE OXIDE FILM JAPAN SCIENCE AND TECHNOLOGY AGENCY (JP) 2013-05-09 US disclosed
US-20100113260-A1 Ruthenium compositions and methods of making the same SYMYX TECHNOLOGIES, INC. (US) 2010-05-06 US disclosed
US-20090286678-A1 High Surface Area Metal And Metal Oxide Materials and Methods of Making the Same SYMYX TECHNOLOGIES, INC. (US) 2009-11-19 US disclosed
US-20090270251-A1 Cobalt compositions and methods of making the same SYMYX TECHNOLOGIES, INC. (US) 2009-10-29 US disclosed
US-20090215613-A1 Yttrium Compositions And Methods of Making the Same SYMYX TECHNOLOGIES, INC. (US) 2009-08-27 US disclosed
US-20090187036-A1 Nickel Compositions And Methods of Making the Same SYMYX TECHNOLOGIES, INC. (US) 2009-07-23 US disclosed
US-20090182160-A1 Vanadium Compositions And Methods of Making the Same SYMYX TECHNOLOGIES, INC. (US) 2009-07-16 US disclosed
US-20090029852-A1 Molybdenum Compositions And Methods of Making the Same FREESLATE, INC. 2009-01-29 US disclosed
US-20090011930-A1 Cerium Compositions and Methods of Making the Same SYMYX TECHNOLOGIES, INC. (US) 2009-01-08 US disclosed
EP-1879833-A2 HIGH SURFACE AREA METAL AND METAL OXIDE MATERIALS AND METHODS OF MAKING SAME Symyx Technologies, Inc. (US) 2008-01-23 EP disclosed
WO-2006119311-A2 HIGH SURFACE AREA METAL AND METAL OXIDE MATERIALS AND METHODS OF MAKING SAME SYMYX TECHNOLOGIES, INC. (US) 2006-11-09 WO disclosed