⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL28135360 | 1.00 | — | — | |
| SCHEMBL27210326 | 0.89 | — | — | |
| SCHEMBL515558 | 0.89 | — | — | |
| SCHEMBL2297212 | 0.89 | — | — | |
| SCHEMBL28831635 | 0.89 | — | — | |
| SCHEMBL21327766 | 0.89 | — | — | |
| SCHEMBL29367621 | 0.87 | — | — | |
| SCHEMBL27685520 | 0.87 | — | — | |
| SCHEMBL15338 | 0.87 | — | — | |
| SCHEMBL1128221 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 7721 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119894024-B | Full-printing film patterning method | SHANGHAI UNIVERSITY (CN) | 2026-05-26 | — | — | CN | claimed |
| US-12641872-B2 | Semiconductor device and a method of manufacturing the semiconductor device | SK Hynix Inc. (KR) | 2026-05-26 | — | — | US | claimed |
| CN-116072733-B | High-durability FeFET (field effect transistor) based on ferroelectric hafnium aluminum oxide and aluminum oxide gate stack and preparation method thereof | 北京大学 | 2026-05-22 | — | — | CN | claimed |
| WO-2025167240-A9 | CHIP AND MANUFACTURING METHOD THEREFOR, AND ELECTRONIC DEVICE | 华为技术有限公司 | 2026-05-15 | — | — | WO | claimed |
| CN-122028479-A | Semiconductor device with engineering gate dielectric stack and preparation method thereof | 赛晶亚太半导体科技(浙江)有限公司 | 2026-05-12 | — | — | CN | claimed |
| US-20260096107-A1 | 1S1R-BASED SELF-SELECTIVE MEMORY AND MANUFACTURING METHOD THEREFOR | PEKING UNIVERSITY (CN) | 2026-04-02 | — | — | US | claimed |
| US-20260090370-A1 | METAL-INSULATOR-METAL DEVICE WITH IMPROVED PERFORMANCE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-03-26 | — | — | US | claimed |
| EP-3857463-B1 | APPLICATIONS OF BACK-END-OF-LINE (BEOL) CAPACITORS IN COMPUTE-IN-MEMORY (CIM) CIRCUITS | INTEL CORP (US) | 2026-03-25 | — | — | EP | claimed |
| EP-4696117-A1 | RRAM WITH METAL-FERROELECTRIC-INSULATOR-METAL STACK | International Business Machines Corporation (US) | 2026-02-18 | — | — | EP | claimed |
| US-12507474-B2 | Input/output semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-12-23 | — | — | US | claimed |
| CN-1619817-A | Semiconductor devices having different gate dielectrics and methods for manufacturing the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2005-05-25 | — | — | CN | claimed |
| EP-1531496-A2 | Semiconductor devices having transistors and method for manufacturing the same | Samsung Electronics Co., Ltd. (KR) | 2005-05-18 | — | — | EP | claimed |
| US-20050098839-A1 | Semiconductor devices having different gate dielectrics and methods for manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-05-12 | — | — | US | claimed |
| US-6884685-B2 | Radical oxidation and/or nitridation during metal oxide layer deposition process | FREESCALE SEMICONDUCTORS, INC. (US) | 2005-04-26 | — | — | US | claimed |
| CN-1607607-A | Magnetic random access memory (MRAM) having a magnetic tunneling junction (MTJ) layer including a tunneling film of uniform thickness and method of manufacturing the same | SAMSUNG ELECTRONICS CO LTD (KR) | 2005-04-20 | — | — | CN | claimed |
| US-20040161899-A1 | Radical oxidation and/or nitridation during metal oxide layer deposition process | NXP, B.V. F/K/A FREESCALE SEMICONDUCTOR, INC. (NL) | 2004-08-19 | — | — | US | claimed |
| US-6696332-B2 | Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing | TEXAS INSTRUMENTS INCORPORATED | 2004-02-24 | — | — | US | claimed |
| US-20030211692-A1 | Method of fabricating trap type nonvolatile memory device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2003-11-13 | — | — | US | claimed |
| US-20030116804-A1 | Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processing | TEXAS INSTRUMENTS INCORPORATED | 2003-06-26 | — | — | US | claimed |
| US-6395650-B1 | Methods for forming metal oxide layers with enhanced purity | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2002-05-28 | — | — | US | claimed |