⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL557585 | 0.89 | — | — | |
| SCHEMBL28135360 | 0.89 | — | — | |
| SCHEMBL35932 | 0.89 | — | — | |
| SCHEMBL29265631 | 0.80 | — | — | |
| Water SCHEMBL10659100 | 0.80 | — | — | |
| SCHEMBL16243880 | 0.80 | — | — | |
| SCHEMBL4349083 | 0.80 | — | — | |
| SCHEMBL21327766 | 0.80 | — | — | |
| SCHEMBL28365826 | 0.80 | — | — | |
| SCHEMBL5407170 | 0.80 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 137 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12615769-B2 | Three-dimensional nor memory string arrays of thin-film ferroelectric transistors | SUNRISE MEMORY CORPORATION (US) | 2026-04-28 | — | — | US | claimed |
| EP-3857463-B1 | APPLICATIONS OF BACK-END-OF-LINE (BEOL) CAPACITORS IN COMPUTE-IN-MEMORY (CIM) CIRCUITS | INTEL CORP (US) | 2026-03-25 | — | — | EP | claimed |
| US-12550382-B2 | Thin-film storage transistor with ferroelectric storage layer | SUNRISE MEMORY CORPORATION (US) | 2026-02-10 | — | — | US | claimed |
| US-12402319-B2 | Three-dimensional memory string array of thin-film ferroelectric transistors formed with an oxide semiconductor channel | SUNRISE MEMORY CORPORATION (US) | 2025-08-26 | — | — | US | claimed |
| US-20250113493-A1 | THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TRANSISTORS | SUNRISE MEMORY CORPORATION | 2025-04-03 | — | — | US | claimed |
| US-12160996-B2 | Three-dimensional memory string array of thin-film ferroelectric transistors | SUNRISE MEMORY CORPORATION (US) | 2024-12-03 | — | — | US | claimed |
| EP-4396816-A1 | THREE-DIMENSIONAL NOR MEMORY STRING ARRAYS OF THIN-FILM FERROELECTRIC TRANSISTORS | Sunrise Memory Corporation (US) | 2024-07-10 | — | — | EP | claimed |
| CN-117916805-A | Three-dimensional NOR memory string array of thin film ferroelectric transistors | 日升存储公司 | 2024-04-19 | — | — | CN | claimed |
| US-20240040798-A1 | THREE-DIMENSIONAL MEMORY STRING ARRAY OF THIN-FILM FERROELECTRIC TRANSISTORS | SUNRISE MEMORY CORPORATION | 2024-02-01 | — | — | US | claimed |
| US-11839086-B2 | 3-dimensional memory string array of thin-film ferroelectric transistors | SUNRISE MEMORY CORPORATION (US) | 2023-12-05 | — | — | US | claimed |
| CN-112334916-A | Application of back end of line (BEOL) capacitor in-memory Computation (CIM) circuit | 英特尔公司 | 2021-02-05 | — | — | CN | claimed |
| US-20200203381-A1 | FERROELECTRIC MEMORY DEVICES CONTAINING A TWO-DIMENSIONAL CHARGE CARRIER GAS CHANNEL AND METHODS OF MAKING THE SAME | SanDisk Technologies, Inc. | 2020-06-25 | — | — | US | claimed |
| WO-2020068323-A1 | APPLICATIONS OF BACK-END-OF-LINE (BEOL) CAPACITORS IN COMPUTE-IN-MEMORY (CIM) CIRCUITS | INTEL CORPORATION (US) | 2020-04-02 | — | — | WO | claimed |
| US-20190138893-A1 | APPLICATIONS OF BACK-END-OF-LINE (BEOL) CAPACITORS IN COMPUTE-IN-MEMORY (CIM) CIRCUITS | INTEL CORPORATION | 2019-05-09 | — | — | US | claimed |
| US-8314465-B2 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., INC. (KR) | 2012-11-20 | — | — | US | claimed |
| US-20110198710-A1 | DIELECTRIC LAYER FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | LEE JONG-HO | 2011-08-18 | — | — | US | claimed |
| US-7902019-B2 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2011-03-08 | — | — | US | claimed |
| US-20080185631-A1 | DIELECTRIC LAYER FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-08-07 | — | — | US | claimed |
| US-7371633-B2 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-05-13 | — | — | US | claimed |
| US-20050151184-A1 | Dielectric layer for semiconductor device and method of manufacturing the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2005-07-14 | — | — | US | claimed |