Fluoride

Fluoride

SCHEMBL36080

F.[N]

nearest known ligand 0.00

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⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
Fluoride SCHEMBL4544067 1.00
Fluoride SCHEMBL4706001 1.00
Fluoride SCHEMBL5947020 1.00
Fluoride SCHEMBL1306081 1.00
Fluoride SCHEMBL3226162 1.00
Fluoride SCHEMBL4704684 1.00
Fluoride SCHEMBL41858 1.00
Fluoride SCHEMBL4540893 1.00
Fluoride SCHEMBL9278384 1.00
Fluoride SCHEMBL3179968 1.00

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Appears in 5275 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-122081898-A Heavy hydrogen containing membranes 2026-05-26 CN claimed
EP-4738472-A1 CARBON ADDITIVE WITH A MODIFICATION FOR OR IN A USE FOR A BATTERY'S ELECTRODE AND THE BATTERY TOYOTA JIDOSHA KABUSHIKI KAISHA (JP) 2026-05-06 EP claimed
US-20260123367-A1 HARD MASK TRIMMING IN METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-04-30 US claimed
US-12615980-B2 Etching of indium gallium zinc oxide LAM RESEARCH CORPORATION (US) 2026-04-28 US claimed
US-20260107547-A1 HIGH SENSITIVITY ETCHING WITH GERMANIUM-CONTAINING GASES TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) 2026-04-16 US claimed
US-20260026282-A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING LOW-TEMPERATURE PLASMA ETCHING PROCESS SAMSUNG ELECTRONICS CO, LTD. (KR) 2026-01-22 US claimed
US-12531211-B2 Sulfur-containing molecules for high aspect ratio plasma etching processes L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude (FR) 2026-01-20 US claimed
US-12522680-B2 Perovskite optoelectronic devices and method for manufacturing the same SN DISPLAY CO., LTD. (KR) 2026-01-13 US claimed
US-12520558-B2 High selectivity etching with germanium-containing gases TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 2026-01-06 US claimed
EP-3963170-B1 WEB PROTECTORS FOR USE IN A DOWNHOLE TOOL ROBERTSON IP LLC (US) 2025-12-24 EP claimed
US-4975259-A MIXING WITH A CARRIER GAS, COOLING AND RECOVERY OF LIQUIFIED PRODUCCT; ELIMINATES OXYGEN, NITROGEN, ETC. MITSUI TOATSU CHEMICALS, INC. (JP) 1990-12-04 US claimed
EP-0345354-A1 Process for purifying nitrogen-fluoride MITSUI TOATSU CHEMICALS, Inc. (JP) 1989-12-13 EP claimed
CN-1036856-A Stable superconductor and preparation technology thereof RHONE POULENC CHIMIE (FR) 1989-11-01 CN claimed
US-4857139-A Method and apparatus for forming a layer SEMICONDUCTOR ENERGY LABORATORY CO., LTD. (JP) 1989-08-15 US claimed
US-4759179-A Method for generating electronically excited NF for use in a laser ROCKWELL INTERNATIONAL CORPORATION (US) 1988-07-26 US claimed
CN-85104201-B Method for producing 5-fluoro-2' -deoxyuridine from uridylic acid 中国科学院上海有机化学研究所 1988-04-13 CN claimed
US-4568410-A Selective plasma etching of silicon nitride in the presence of silicon oxide MOTOROLA, INC. (US) 1986-02-04 US claimed
US-4188592-A Closed cycle chemical laser UNITED TECHNOLOGIES CORPORATION (US) 1980-02-12 US claimed
US-4165773-A FROM FLUORINE ATOMS AND AZIDE RADICALS ROCKWELL INTERNATIONAL CORPORATION (US) 1979-08-28 US claimed
US-4031484-A Portable chemical laser with gas recirculation UNITED TECHNOLOGIES CORPORATION (US) 1977-06-21 US claimed