SCHEMBL3614926

SCHEMBL3614926

COC(OC)[SiH2]C[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL5425411 0.83
SCHEMBL5405149 0.80
SCHEMBL978794 0.76
SCHEMBL5421292 0.76
SCHEMBL3616781 0.74
SCHEMBL3621813 0.74
SCHEMBL3619997 0.72
SCHEMBL3625652 0.70
SCHEMBL310298 0.69
SCHEMBL331418 0.69

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12346026-B2 Composition for forming underlayer film, resist pattern forming method, and manufacturing method of electronic device FUJIFILM CORPORATION (JP) 2025-07-01 US disclosed
US-20220252985-A1 COMPOSITION FOR FORMING UNDERLAYER FILM, RESIST PATTERN FORMING METHOD, AND MANUFACTURING METHOD OF ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2022-08-11 US disclosed
WO-2021122431-A1 POLYURETHANE FOAMS BASED ON POLYETHER CARBONATE POLYOLS COVESTRO INTELLECTUAL PROPERTY GMBH & CO. KG (DE) 2021-06-24 WO disclosed
EP-3838964-A1 POLYURETHANE FOAMS BASED ON POLYETHER CARBONATE POLYOLS Covestro Deutschland AG (DE) 2021-06-23 EP disclosed
WO-2021106537-A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, PATTERN FORMING METHOD, AND ELECTRONIC DEVICE MANUFACTURING METHOD 富士フイルム株式会社 2021-06-03 WO disclosed
CN-106010382-B Optical laminate and liquid crystal display device 住友化学株式会社 2020-03-27 CN disclosed
US-10025188-B2 Resist pattern-forming method JSR CORPORATION (JP) 2018-07-17 US disclosed
US-20170322492-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2017-11-09 US disclosed
US-20160320705-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2016-11-03 US disclosed
US-9434609-B2 Method for forming pattern, and polysiloxane composition JSR CORPORATION (JP) 2016-09-06 US disclosed
US-20130233825-A1 COMPOSITION FOR FORMING RESIST UNDERLAYER FILM AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-09-12 US disclosed
EP-2615497-A1 RESIST PATTERN FORMING METHOD JSR Corporation (JP) 2013-07-17 EP disclosed
US-20130130179-A1 POLYSILOXANE COMPOSITION AND PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-23 US disclosed
WO-2013061601-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 WO disclosed
US-20130107235-A1 PATTERN-FORMING METHOD JSR CORPORATION (JP) 2013-05-02 US disclosed
US-20130101942-A1 METHOD FOR FORMING RESIST PATTERN, AND COMPOSITION FOR FORMING RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2013-04-25 US disclosed
EP-2579304-A1 INSULATION PATTERN FORMING METHOD AND INSULATION PATTERN FORMING MATERIAL FOR DAMASCENE PROCESS JSR Corporation (JP) 2013-04-10 EP disclosed
US-20130084394-A1 INSULATION PATTERN-FORMING METHOD AND INSULATION PATTERN-FORMING MATERIAL JSR CORPORATION (JP) 2013-04-04 US disclosed
US-20120183908-A1 RESIST PATTERN-FORMING METHOD JSR CORPORATION (JP) 2012-07-19 US disclosed
US-20100178620-A1 INVERTED PATTERN FORMING METHOD AND RESIN COMPOSITION JSR CORPORATION (JP) 2010-07-15 US disclosed