⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL17458658 | 1.00 | — | — | |
| SCHEMBL16751873 | 1.00 | — | — | |
| SCHEMBL141586 | 0.87 | — | — | |
| SCHEMBL3235769 | 0.87 | — | — | |
| SCHEMBL19434162 | 0.87 | — | — | |
| SCHEMBL19434157 | 0.87 | — | — | |
| SCHEMBL18097 | 0.87 | — | — | |
| Zinc Ion SCHEMBL514320 | 0.87 | — | — | |
| SCHEMBL15372871 | 0.87 | — | — | |
| SCHEMBL3619033 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 32799 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12046698-B2 | Optoelectronic device having a boron nitride alloy electron blocking layer and method of production | KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY (SA) | 2024-07-23 | — | — | US | claimed |
| US-12046669-B2 | HEMT and method of fabricating the same | UNITED MICROELECTRONICS CORP. (TW) | 2024-07-23 | — | — | US | claimed |
| US-12046639-B2 | Semiconductor device with strain relaxed layer | UNITED MICROELECTRONICS CORP. (TW) | 2024-07-23 | — | — | US | claimed |
| US-12046640-B2 | Semiconductor device with strain relaxed layer | UNITED MICROELECTRONICS CORP. (TW) | 2024-07-23 | — | — | US | claimed |
| WO-2024149324-A1 | TRANSISTOR DEVICE | 北京大学 | 2024-07-18 | — | — | WO | claimed |
| US-20240243179-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | Huawei Digital Power Technologies Co., Ltd. (CN) | 2024-07-18 | — | — | US | claimed |
| US-20240243197-A1 | DUAL-GATE SEMICONDUCTOR STRUCTURES FOR POWER APPLICATIONS | QORVO US, INC. | 2024-07-18 | — | — | US | claimed |
| CN-113345960-B | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2024-07-16 | — | — | CN | claimed |
| CN-118345510-A | Epitaxial wafer and preparation method thereof | 中环领先半导体科技股份有限公司 | 2024-07-16 | — | — | CN | claimed |
| CN-118352388-A | Dual gate semiconductor structure for power applications | QORVO美国公司 | 2024-07-16 | — | — | CN | claimed |
| US-5102694-A | Reduction of gaseous flow rate of reactants periodically at zero, resetting it to normal flow rate, thus, continuing cycling for entire growth period of deposition | CVD INCORPORATED (US) | 1992-04-07 | — | — | US | claimed |
| EP-0177918-B1 | UV DETECTOR AND METHOD FOR FABRICATING IT | HONEYWELL INC. (US) | 1991-03-06 | — | — | EP | claimed |
| US-4967089-A | Pulsed optical source | HONEYWELL INC. (US) | 1990-10-30 | — | — | US | claimed |
| US-4903088-A | Semiconductor laser with large bandgap connection layer | U.S. PHILIPS CORP. (US) | 1990-02-20 | — | — | US | claimed |
| EP-0316860-A2 | Pulsed optical source | HONEYWELL INC. (US) | 1989-05-24 | — | — | EP | claimed |
| EP-0297654-A1 | Semiconductor device for producing electromagnetic radiation | Koninklijke Philips Electronics N.V. (NL) | 1989-01-04 | — | — | EP | claimed |
| EP-0202637-A2 | UV photocathode | HONEYWELL INC. (US) | 1986-11-26 | — | — | EP | claimed |
| US-4616248-A | UV photocathode using negative electron affinity effect in Alx Ga1 N | HONEYWELL INC. (US) | 1986-10-07 | — | — | US | claimed |
| US-4614961-A | Tunable cut-off UV detector based on the aluminum gallium nitride material system | HONEYWELL INC. (US) | 1986-09-30 | — | — | US | claimed |
| EP-0177918-A2 | UV detector and method for fabricating it | HONEYWELL INC. (US) | 1986-04-16 | — | — | EP | claimed |