⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL6935631 | 0.89 | — | — | |
| Zinc Ion SCHEMBL504004 | 0.89 | — | — | |
| SCHEMBL3235143 | 0.89 | — | — | |
| Ammonia Solution, Strong SCHEMBL17684981 | 0.89 | — | — | |
| SCHEMBL766543 | 0.89 | — | — | |
| SCHEMBL17763 | 0.87 | — | — | |
| SCHEMBL16751873 | 0.87 | — | — | |
| SCHEMBL36176 | 0.87 | — | — | |
| SCHEMBL50284 | 0.87 | — | — | |
| SCHEMBL17458658 | 0.87 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Appears in 10402 patents — a generic fragment claimed broadly, so it's down-weighted as IP noise. Top by claim status then date:
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12046669-B2 | HEMT and method of fabricating the same | UNITED MICROELECTRONICS CORP. (TW) | 2024-07-23 | — | — | US | claimed |
| WO-2024149324-A1 | TRANSISTOR DEVICE | 北京大学 | 2024-07-18 | — | — | WO | claimed |
| US-20240234564-A1 | SEMICONDUCTOR DEVICE, SEMICONDUCTOR MODULE, AND WIRELESS COMMUNICATION APPARATUS | Sony Group Corporation (JP) | 2024-07-11 | — | — | US | claimed |
| US-20240222548-A1 | LIGHT EMITTING DIODE | TAIWAN-ASIA SEMICONDUCTOR CORPORATION (TW) | 2024-07-04 | — | — | US | claimed |
| US-12024662-B2 | Mn-activated oxidohalides as conversion luminescent materials for LED-based solid state light sources | LITEC-VERMOGENSVERWALTUNGSGESELLSCHAFT MBH (DE) | 2024-07-02 | — | — | US | claimed |
| CN-118281124-A | Light emitting diode | 台亚半导体股份有限公司 | 2024-07-02 | — | — | CN | claimed |
| CN-113875019-B | Semiconductor device and method of manufacturing the same | 英诺赛科(苏州)半导体有限公司 | 2024-07-02 | — | — | CN | claimed |
| US-20240213020-A1 | MOCVD METHOD FOR GROWING INALGAN/GAN HETEROSTRUCTURE | NATIONAL YANG MING CHIAO TUNG UNIVERSITY (TW) | 2024-06-27 | — | — | US | claimed |
| EP-4388058-A1 | COLOR STABLE MN-ACTIVATED OXIDOFLUORIDES AS CONVERSION LUMINESCENT MATERIALS FOR LED-BASED SOLID STATE LIGHT SOURCES | Seoul Semiconductor Co., Ltd. (KR) | 2024-06-26 | — | — | EP | claimed |
| CN-118248800-A | Optical device performance improving method, semiconductor optical device and electronic equipment | 广东省科学院半导体研究所 | 2024-06-25 | — | — | CN | claimed |
| US-5796771-A | Miniature self-pumped monolithically integrated solid state laser | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 1998-08-18 | — | — | US | claimed |
| EP-0812478-A1 | HIGH GAIN ULTRAVIOLET PHOTOCONDUCTOR BASED ON WIDE BANDGAP NITRIDES | HONEYWELL INC. (US) | 1997-12-17 | — | — | EP | claimed |
| US-5684309-A | Stacked quantum well aluminum indium gallium nitride light emitting diodes | NORTH CAROLINA STATE UNIVERSITY (US) | 1997-11-04 | — | — | US | claimed |
| US-5650198-A | Defect reduction in the growth of group III nitrides | THE REGENTS OF THE UNIVERSITY OF CALIFORNIA (US) | 1997-07-22 | — | — | US | claimed |
| US-5598014-A | High gain ultraviolet photoconductor based on wide bandgap nitrides | HONEYWELL INC. (US) | 1997-01-28 | — | — | US | claimed |
| US-5592501-A | A SEPARATE-CONFINEMENT HETEROSTRUCTURE LASER | CREE RESEARCH, INC. (US) | 1997-01-07 | — | — | US | claimed |
| EP-0732754-A2 | Light-emitting semiconductor device using group III nitride compound | TOYODA GOSEI CO., LTD. (JP) | 1996-09-18 | — | — | EP | claimed |
| EP-0731512-A2 | Light emitting diode | Hewlett-Packard Company (US) | 1996-09-11 | — | — | EP | claimed |
| WO-1996027213-A1 | HIGH GAIN ULTRAVIOLET PHOTOCONDUCTOR BASED ON WIDE BANDGAP NITRIDES | HONEYWELL INC. (US) | 1996-09-06 | — | — | WO | claimed |
| WO-1996011502-A1 | WAVELENGTH TUNING OF GaN-BASED LIGHT EMITTING DIODES, LIGHT EMITTING DIODE ARRAYS AND DISPLAYS BY INTRODUCTION OF DEEP DONORS | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 1996-04-18 | — | — | WO | claimed |