SCHEMBL36227

SCHEMBL36227

Cc1cc(C(c2cc(C)c(O)c(C)c2)c2ccc(O)c(O)c2)cc(C)c1O

nearest known ligand 0.47

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
TDP1 Q9NUW8 9/20 0.44
KDM4E B2RXH2 8/20 0.44
RECQL P46063 7/20 0.44
MAPT P10636 7/20 0.44
KMT2A Q03164 4/20 0.44
APEX1 P27695 4/20 0.44
BLM P54132 4/20 0.44
LMNA P02545 3/20 0.44
TSHR P16473 2/20 0.44
HIF1A Q16665 2/20 0.44
HSD17B10 Q99714 2/20 0.44
MTOR P42345 2/20 0.44
ALOX15 P16050 1/20 0.44
NFKB1 P19838 1/20 0.44
THPO P40225 1/20 0.44
POLB P06746 1/20 0.44
TRPA1 O75762 2/20 0.44
PTGS1 P23219 2/20 0.44
CACNA1C Q13936 1/20 0.44
MEN1 O00255 3/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL29373036 1.00 TDP1 (0.44) TDP1KDM4ERECQLMAPTKMT2A
SCHEMBL17445330 0.90 TP53 (0.46) TDP1KDM4EMAPTKMT2ALMNA
SCHEMBL5046706 0.89 ESR1 (0.42) TDP1KDM4ERECQLMAPTKMT2A
SCHEMBL29637883 0.88 TDP1 (0.48) TDP1KDM4ERECQLMAPTKMT2A
SCHEMBL36674 0.88 TDP1 (0.48) TDP1KDM4ERECQLMAPTKMT2A
SCHEMBL30374855 0.88 TDP1 (0.48) TDP1KDM4ERECQLMAPTKMT2A
SCHEMBL18941007 0.87 PTGS1 (0.39) TDP1KDM4ERECQLMAPTKMT2A
SCHEMBL1595123 0.85 CA1 (0.48) KDM4EMAPTKMT2ALMNATRPA1
SCHEMBL8943128 0.85 TDP1 (0.37) TDP1KDM4ERECQLMAPTKMT2A
SCHEMBL24145980 0.83 TDP1 (0.47) TDP1KDM4ERECQLMAPTKMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 1649 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-119875110-A Polyphenylene ether, polyphenylene ether solution, resin film, prepreg, and metal-clad laminate 旭化成株式会社 2025-04-25 CN claimed
US-7879528-B2 For forming pattern that prevents contamination within the exposure apparatus; lithography TOKYO OHKA KOGYO CO., LTD. (JP) 2011-02-01 US claimed
EP-2203783-A2 THICK FILM RESISTS AZ Electronic Materials USA Corp. (US) 2010-07-07 EP claimed
WO-2009040661-A2 THICK FILM RESISTS AZ ELECTRONIC MATERIALS USA CORP. (DE) 2009-04-02 WO claimed
US-20090081589-A1 THICK FILM RESISTS MERCK PATENT GMBH (DE) 2009-03-26 US claimed
US-20080176170-A1 RESIST COMPOSITION FOR ELECTRON BEAM OR EUV TOKYO OHKA KOGYO CO., LTD. (JP) 2008-07-24 US claimed
EP-1623274-A2 PHOTORESIST COMPOSITIONS AZ Electronic Materials USA Corp. (US) 2006-02-08 EP claimed
EP-1614005-A2 PHOTORESIST COMPOSITIONS AZ Electronic Materials USA Corp. (US) 2006-01-11 EP claimed
US-6905809-B2 Photoresist compositions CLARIANT FINANCE (BVI) LIMITED (VG) 2005-06-14 US claimed
WO-2004088424-A2 PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-10-14 WO claimed
WO-2004088423-A2 PHOTORESIST COMPOSITIONS AZ ELECTRONIC MATERIALS USA CORP. (US) 2004-10-14 WO claimed
US-20040197696-A1 Photoresist compositions AZ ELECTRONIC MATERIALS USA CORP. 2004-10-07 US claimed
US-20040197704-A1 Photoresist compositions AZ ELECTRONIC MATERIALS USA CORP. 2004-10-07 US claimed
US-6790582-B1 NOVOLAK RESIN PARTIALLY ESTERIFIED WITH NAPHTHOQUINONEDIAZIDOSULFONYL GROUP; DILUTION RESIN(S), AND SOLVENT CLARIANT FINANCE BVI LIMITED (VG) 2004-09-14 US claimed
EP-0827024-B1 Radiation-sensitive resin composition JSR CORP (JP) 2003-01-02 EP claimed
US-5434031-A Positive-working naphthoquinone diazide photoresist composition containing specific hydroxy compound additive TOKYO OHKA KOGYO CO., LTD. (JP) 1995-07-18 US claimed
US-6423458-B1 None US disclosed
JP-6199719-A None JP disclosed
EP-0445680-A2 Positive type photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 1991-09-11 EP disclosed
EP-0443533-A2 Positive photoresist composition FUJI PHOTO FILM CO., LTD. (JP) 1991-08-28 EP disclosed