Predicted protein targets (top 14)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | MAPT | P10636 | 2/20 | 0.37 |
| ▸ | CA1 | P00915 | 1/20 | 0.35 |
| ▸ | CA2 | P00918 | 1/20 | 0.35 |
| ▸ | CA4 | P22748 | 1/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.34 |
| ▸ | ALDH1A1 | P00352 | 5/20 | 0.34 |
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.34 |
| ▸ | POLB | P06746 | 2/20 | 0.33 |
| ▸ | MAOA | P21397 | 2/20 | 0.33 |
| ▸ | USP2 | O75604 | 1/20 | 0.33 |
| ▸ | LMNA | P02545 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 2/20 | 0.32 |
| ▸ | MCL1 | Q07820 | 1/20 | 0.31 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrogen Sulfide SCHEMBL9081553 | 0.95 | PTGS1 (0.33) | MAPT | |
| Methylsulfanylmethane SCHEMBL15329055 | 0.92 | CA1 (0.36) | MAPTCA1CA2CA4KMT2A | |
| Hydrogen Sulfide SCHEMBL27764012 | 0.76 | CA1 (0.43) | MAPTCA1CA2CA4KMT2A | |
| SCHEMBL8386273 | 0.73 | IDO1 (0.49) | CA1CA2KMT2A | |
| SCHEMBL23467074 | 0.73 | CA1 (0.40) | MAPTCA1CA2CA4KMT2A | |
| SCHEMBL670912 | 0.73 | CA1 (0.45) | MAPTCA1CA2CA4KMT2A | |
| SCHEMBL3959165 | 0.73 | CA1 (0.40) | MAPTCA1CA2CA4KMT2A | |
| Ammonia Solution, Strong SCHEMBL5192485 | 0.72 | CA1 (0.39) | MAPTCA1CA2CA4KMT2A | |
| SCHEMBL31423409 | 0.72 | KMT2A (0.42) | MAPTCA1CA2CA4KMT2A | |
| SCHEMBL6329621 | 0.71 | CA1 (0.33) | MAPTCA1CA2CA4KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 75 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-115044040-B | Polyimide-containing polymer, positive photosensitive resin composition, negative photosensitive resin composition, and pattern forming method | 信越化学工业株式会社 | 2024-07-02 | — | — | CN | disclosed |
| CN-118103774-A | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, and pattern forming method | 信越化学工业株式会社 | 2024-05-28 | — | — | CN | disclosed |
| CN-113527101-B | Novel compound, polymer, process for producing the same, photosensitive resin composition, pattern forming process, cured film, and electronic component | 信越化学工业株式会社 | 2024-04-23 | — | — | CN | disclosed |
| CN-117794985-A | Polymer containing silicon phenylene skeleton, photosensitive resin composition, pattern forming method, and method for producing optical semiconductor element | 信越化学工业株式会社 | 2024-03-29 | — | — | CN | disclosed |
| CN-117616337-A | Film forming material for semiconductor, member forming material for semiconductor, process member forming material for semiconductor, underlayer film forming material, underlayer film, and semiconductor device | 株式会社艾迪科 | 2024-02-27 | — | — | CN | disclosed |
| CN-110637256-B | Material for forming film for lithography, composition for forming film for lithography, underlayer film for lithography, and pattern forming method | 三菱瓦斯化学株式会社 | 2024-01-09 | — | — | CN | disclosed |
| CN-109388023-B | Photosensitive resin composition, photosensitive resin coating, photosensitive dry film, laminate, and pattern forming method | 信越化学工业株式会社 | 2023-12-22 | — | — | CN | disclosed |
| CN-117120927-A | Photosensitive resin composition, photosensitive resin coating film, photosensitive dry film, and pattern forming method | 信越化学工业株式会社 | 2023-11-24 | — | — | CN | disclosed |
| CN-116991034-A | Negative photosensitive resin composition, pattern forming method, interlayer insulating film, surface protective film, and electronic component | 信越化学工业株式会社 | 2023-11-03 | — | — | CN | disclosed |
| CN-109388022-B | Silicone-structure-containing polymer, photosensitive resin composition, photosensitive resin coating layer, photosensitive dry film, laminate, and pattern forming method | 信越化学工业株式会社 | 2023-07-28 | — | — | CN | disclosed |
| CN-101578232-B | Method for sublithographic patterning using block copolymer self-assembly | MICRON TECHNOLOGY INC | 2012-05-30 | — | — | CN | disclosed |
| EP-2219076-A1 | COMPOSITION FOR FORMING BASE FILM FOR LITHOGRAPHY AND METHOD FOR FORMING MULTILAYER RESIST PATTERN | Mitsubishi Gas Chemical Company, Inc. (JP) | 2010-08-18 | — | — | EP | disclosed |
| CN-101578232-A | Methods using block copolymer self-assembly for sub-lithographic patterning | MICRON TECHNOLOGY INC (US) | 2009-11-11 | — | — | CN | disclosed |
| US-7541134-B2 | Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2009-06-02 | — | — | US | disclosed |
| US-20050277058-A1 | Antireflective film-forming composition, method for manufacturing the same, and antireflective film and pattern formation method using the same | SHIN-ETSU CHEMICAL CO., LTD. | 2005-12-15 | — | — | US | disclosed |
| US-6602647-B2 | Photo acid generator with high transparency and excellent heat stability in a photoresist for lithography using far ultraviolet light, especially light of ArF excimer consists of a cyclic sulfonium compound with 2-oxo group | NEC CORPORATION (JP) | 2003-08-05 | — | — | US | disclosed |
| US-20020045122-A1 | Sulfonium salt compound and resist composition and pattern forming method using the same | NEC CORPORATION | 2002-04-18 | — | — | US | disclosed |
| EP-1113334-A1 | Sulfonium salt compound, resist composition comprising the same and pattern forming method using the composition | NEC CORPORATION (JP) | 2001-07-04 | — | — | EP | disclosed |
| US-6074801-A | POLYMER WITH REPEATING UNITS, CROSSLINKING AND ADDING PHOTOACID GENERATOR WITH LIGHT | NEC CORPORATION (JP) | 2000-06-13 | — | — | US | disclosed |
| US-5585507-A | FINENESS PATTERNS | NEC CORPORATION (JP) | 1996-12-17 | — | — | US | disclosed |