Predicted protein targets (top 3)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PYGL | P06737 | 1/20 | 0.31 |
| ▸ | GAA | P10253 | 1/20 | 0.31 |
| ▸ | GLB1 | P16278 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11157293 | 0.82 | GBA1 (0.33) | — | |
| SCHEMBL561943 | 0.75 | GLB1 (0.30) | GLB1 | |
| SCHEMBL561944 | 0.75 | GLB1 (0.30) | GLB1 | |
| SCHEMBL14134351 | 0.75 | GLB1 (0.30) | GLB1 | |
| SCHEMBL18300500 | 0.73 | — | — | |
| SCHEMBL14266973 | 0.73 | — | — | |
| SCHEMBL18300406 | 0.73 | — | — | |
| SCHEMBL18301305 | 0.73 | — | — | |
| SCHEMBL20358135 | 0.73 | — | — | |
| SCHEMBL18300748 | 0.73 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 180 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12638775-B2 | Methods and compositions for improved patterning of photoresist | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-26 | — | — | US | disclosed |
| CN-111863601-B | Method for manufacturing semiconductor device and photoresist | 台湾积体电路制造股份有限公司 | 2024-08-27 | — | — | CN | disclosed |
| CN-113805435-B | Photoresist and method | 台湾积体电路制造股份有限公司 | 2024-05-28 | — | — | CN | disclosed |
| US-11977333-B2 | Semiconductor devices and methods of manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-05-07 | — | — | US | disclosed |
| US-20240079235-A1 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-03-07 | — | — | US | disclosed |
| US-11842896-B2 | Semiconductor devices and methods of manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-12 | — | — | US | disclosed |
| US-20230251571-A1 | Photoresist and Method of Formation and Use | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-08-10 | — | — | US | disclosed |
| US-11650500-B2 | Photoresist and method of formation and use | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-05-16 | — | — | US | disclosed |
| US-20230146910-A1 | METHODS AND COMPOSITIONS FOR IMPROVED PATTERNING OF PHOTORESIST | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-05-11 | — | — | US | disclosed |
| EP-3896522-B1 | PRODUCTION METHOD FOR SEMICONDUCTOR SUBSTRATE | TOKYO OHKA KOGYO CO LTD (JP) | 2023-05-03 | — | — | EP | disclosed |
| US-20030008233-A1 | Negative-working photoresist composition | HADA HIDEO (JP) | 2003-01-09 | — | — | US | disclosed |
| US-6469197-B1 | A (METH)ACRYLATE DERIVATIVE WHOSE ESTER PORTION IS A 4,7-METHANOINDENE DIOL OR 1,4:5,8-DIMETHANONAPHTHALENE DIOL FOR MAKING PHOTORESIST POLYMERS | NEC CORPORATION (JP) | 2002-10-22 | — | — | US | disclosed |
| US-6444397-B2 | AMPLIFICATION; PHOTOLITHOGRAPHY PATTERNING | TOKYO OHKA KOGYO CO., LTD. (JP) | 2002-09-03 | — | — | US | disclosed |
| US-6437052-B1 | Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same | NEC CORPORATION (JP) | 2002-08-20 | — | — | US | disclosed |
| US-20020016431-A1 | Monomer having diol structure, polymer thereof, and negative photoresist composition and pattern forming method using the same background of the invention | NEC CORPORATION | 2002-02-07 | — | — | US | disclosed |
| US-20010049073-A1 | Negative-working photoresist composition | HADA HIDEO (JP) | 2001-12-06 | — | — | US | disclosed |
| US-20010026901-A1 | (Meth) acrylate derivative, polymer and photoresist composition having lactone structure, and method for forming pattern by using it | NEC CORPORATION (JP) | 2001-10-04 | — | — | US | disclosed |
| US-6146806-A | Negative photoresist composition using polymer having 1,2-diol structure and process for forming pattern using the same | NEC CORPORATION (JP) | 2000-11-14 | — | — | US | disclosed |
| US-6106998-A | PHOTORESISTS SUITABLE FOR USE IN PHOTOLITHOGRAPHY THAT EMPLOYS AN ARF EXCIMER LASER; HIGH TRANSPARENCY TO EXPOSURE LIGHT HAVING A WAVELENGTH OF 220 NM OR LESS AND DRY-ETCH RESISTANCE | NEC CORPORATION (JP) | 2000-08-22 | — | — | US | disclosed |
| US-6074801-A | POLYMER WITH REPEATING UNITS, CROSSLINKING AND ADDING PHOTOACID GENERATOR WITH LIGHT | NEC CORPORATION (JP) | 2000-06-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-12638775-B2 | Methods and compositions for improved patterning of photoresist | DSG1, SCO2, ERCC1 | PYGL 1712/4885GAA 2327/4885GLB1 916/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.