SCHEMBL3676200

SCHEMBL3676200

C[SiH2]O[SiH](C)O[Si](C)(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL12909785 0.90
SCHEMBL12909787 0.87
SCHEMBL18406277 0.87
SCHEMBL17660004 0.80
SCHEMBL17718717 0.77
SCHEMBL41580 0.77
SCHEMBL3688172 0.75
SCHEMBL41518 0.75
SCHEMBL15494003 0.72
SCHEMBL400325 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 24 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-111565859-B Surface treatment composition and method 富士胶片电子材料美国有限公司 2022-12-30 CN claimed
CN-112513192-A Surface treatment composition and method 富士胶片电子材料美国有限公司 2021-03-16 CN claimed
CN-111565859-A Surface treatment composition and method 富士胶片电子材料美国有限公司 2020-08-21 CN claimed
CN-117980531-A Silicon precursor materials, silicon-containing films, and related methods 恩特格里斯公司 2024-05-03 CN disclosed
CN-115668459-A Surface treatment method for semiconductor substrate and surface treatment agent composition 中央硝子株式会社 2023-01-31 CN disclosed
CN-107847188-B Composition for latent fingerprint detection 东亚合成株式会社 2022-03-25 CN disclosed
CN-112513192-A Surface treatment composition and method 富士胶片电子材料美国有限公司 2021-03-16 CN disclosed
CN-111565859-A Surface treatment composition and method 富士胶片电子材料美国有限公司 2020-08-21 CN disclosed
CN-104364337-B light-reflective anisotropic conductive adhesive and light-emitting device 迪睿合电子材料有限公司 2016-08-17 CN disclosed
CN-102459423-B Polysiloxane condensation reactants ASAHI KASEI E MATERIALS CORP 2015-05-20 CN disclosed
CN-104364337-A Light-reflective anisotropic conductive adhesive and light-emitting device DEXERIALS CORP 2015-02-18 CN disclosed
US-7737291-B2 2,4,6,8-tetramethylcyclotetrasiloxane and stabilizer used as a material for thin film formation by chemical vapor deposition, or atomic layer deposition ADEKA CORPORATION (JP) 2010-06-15 US disclosed
EP-2125833-A1 METHOD FOR THE PRODUCTION OF POLYMERISABLE SILICONES Wacker Chemie AG (DE) 2009-12-02 EP disclosed
EP-2125834-A1 METHOD FOR THE PRODUCTION OF POLYMERISABLE SILICONES Wacker Chemie AG (DE) 2009-12-02 EP disclosed
US-20090186210-A1 PRECURSOR COMPOSITION FOR POROUS THIN FILM, METHOD FOR PREPARATION OF THE PRECURSOR COMPOSITION, POROUS THIN FILM, METHOD FOR PREPARATION OF THE POROUS THIN FILM, AND SEMICONDUCTOR DEVICE ULVAC. INC. (JP) 2009-07-23 US disclosed
EP-2025709-A1 PRECURSOR COMPOSITION FOR POROUS MEMBRANE, PROCESS FOR PREPARATION OF THE PRECURSOR COMPOSITION, POROUS MEMBRANE, PROCESS FOR PRODUCTION OF THE POROUS MEMBRANE, AND SEMICONDUCTOR DEVICE ULVAC, INC. (JP) 2009-02-18 EP disclosed
WO-2008090013-A1 METHOD FOR THE PRODUCTION OF POLYMERISABLE SILICONES WACKER CHEMIE AG (DE) 2008-07-31 WO disclosed
WO-2008090012-A1 METHOD FOR THE PRODUCTION OF POLYMERISABLE SILICONES WACKER CHEMIE AG (DE) 2008-07-31 WO disclosed
US-20070232821-A1 Composition Containing Siloxane Compound and Phenol Compound ADEKA CORPORATION (JP) 2007-10-04 US disclosed
CN-1981069-A Composition containing siloxane compound and phenol compound ADEKA CORP (JP) 2007-06-13 CN disclosed