⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Charcoal, Activated SCHEMBL11253814 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL32679891 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL31633424 | 0.87 | — | — | |
| Charcoal, Activated SCHEMBL60093 | 0.82 | — | — | |
| SCHEMBL3258619 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL1049306 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL958696 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL49255 | 0.82 | — | — | |
| Charcoal, Activated SCHEMBL2250450 | 0.82 | — | — | |
| SCHEMBL6927595 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 1262 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119742222-A | Integrated CMOS source drain formation with advanced control | 应用材料公司 | 2025-04-01 | — | — | CN | claimed |
| CN-112385046-B | Integrated CMOS source drain formation with advanced control | 应用材料公司 | 2024-12-27 | — | — | CN | claimed |
| CN-112385046-A | Integrated CMOS source drain formation with advanced control | 应用材料公司 | 2021-02-19 | — | — | CN | claimed |
| US-10910471-B2 | Device with large EPI in FinFETs and method of manufacturing | GLOBALFOUNDRIES INC. (KY) | 2021-02-02 | — | — | US | claimed |
| US-20160056238-A1 | RAISED SOURCE/DRAIN EPI WITH SUPPRESSED LATERAL EPI OVERGROWTH | GLOBALFOUNDRIES U.S. INC. | 2016-02-25 | — | — | US | claimed |
| US-9236452-B2 | Raised source/drain EPI with suppressed lateral EPI overgrowth | GLOBALFOUNDRIES INC. (KY) | 2016-01-12 | — | — | US | claimed |
| US-20160005868-A1 | FINFET WITH CONFINED EPITAXY | GLOBALFOUNDRIES U.S. INC. | 2016-01-07 | — | — | US | claimed |
| US-20150340471-A1 | RAISED SOURCE/DRAIN EPI WITH SUPPRESSED LATERAL EPI OVERGROWTH | GLOBALFOUNDRIES INC. (KY) | 2015-11-26 | — | — | US | claimed |
| US-20150255555-A1 | METHODS OF FORMING A NON-PLANAR ULTRA-THIN BODY DEVICE | GLOBALFOUNDRIES INC. (KY) | 2015-09-10 | — | — | US | claimed |
| US-9093514-B2 | Strained and uniform doping technique for FINFETs | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2015-07-28 | — | — | US | claimed |
| US-9058988-B2 | Methods for depositing layers having reduced interfacial contamination | APPLIED MATERIALS, INC. (US) | 2015-06-16 | — | — | US | claimed |
| US-9059285-B2 | Structure and method for increasing strain in a device | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-06-16 | — | — | US | claimed |
| US-8884341-B2 | Integrated circuits | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-11-11 | — | — | US | claimed |
| US-20140252412-A1 | Strained and Uniform Doping Technique for FINFETs | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2014-09-11 | — | — | US | claimed |
| US-8551845-B2 | Structure and method for increasing strain in a device | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-10-08 | — | — | US | claimed |
| US-20130161649-A1 | STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-06-27 | — | — | US | claimed |
| US-20120068193-A1 | STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-03-22 | — | — | US | claimed |
| US-20100255661-A1 | METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION | APPLIED MATERIALS, INC. (US) | 2010-10-07 | — | — | US | claimed |
| WO-2010102089-A2 | METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION | APPLIED MATERIALS, INC. (US) | 2010-09-10 | — | — | WO | claimed |
| US-20260150328-A1 | SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-28 | — | — | US | disclosed |
| US-12641845-B2 | Semiconductor contact structure including via structure with metal bulk layer nested within barrier liner and method for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-26 | — | — | US | disclosed |
| US-12635233-B2 | Method for forming semiconductor structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-19 | — | — | US | disclosed |
| US-12635217-B2 | Isolation layers for reducing leakages between contacts | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-19 | — | — | US | disclosed |
| US-12635225-B2 | Footing removal in cut-metal process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-19 | — | — | US | disclosed |
| US-12635210-B2 | Isolation regions with non-uniform depths and methods forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-05-19 | — | — | US | disclosed |
| CN-122054670-A | Method for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2026-05-15 | — | — | CN | disclosed |
| CN-114496918-B | Integrated circuit structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2026-05-12 | — | — | CN | disclosed |
| US-12628378-B2 | Semiconductor manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-12 | — | — | US | disclosed |
| US-12628398-B2 | Semiconductor structure and method of manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2026-05-12 | — | — | US | disclosed |
| US-20260129954-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-07 | — | — | US | disclosed |
| US-12622240-B2 | Dielectric gap fill | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-05-05 | — | — | US | disclosed |
| US-12615815-B2 | Semiconductor structure including dielectric wall and spacer layer and method for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-28 | — | — | US | disclosed |
| US-20260113932-A1 | SEMICONDUCTOR DEVICES AND METHODS OF MAKING SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-23 | — | — | US | disclosed |
| US-12610615-B2 | Device with isolation structures in active regions | GLOBALFOUNDRIES U.S. INC (US) | 2026-04-21 | — | — | US | disclosed |
| US-12610611-B2 | Semiconductor device structure and methods of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-21 | — | — | US | disclosed |
| US-20260101559-A1 | FORMING SEAMS WITH DESIRABLE DIMENSIONS IN ISOLATION REGIONS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-04-09 | — | — | US | disclosed |
| US-12598785-B2 | Semiconductor devices and methods of manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-04-07 | — | — | US | disclosed |
| US-12598766-B2 | Contact interface engineering for reducing contact resistance | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-04-07 | — | — | US | disclosed |
| US-12593464-B2 | Dielectric layer for nanosheet protection and method of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-03-31 | — | — | US | disclosed |
| US-12593496-B2 | Multiple threshold voltage implementation through lanthanum incorporation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-03-31 | — | — | US | disclosed |
| US-20260090022-A1 | ISOLATION INTERFACES AT THE ENDS OF FIN ISOLATION REGIONS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-03-26 | — | — | US | disclosed |
| US-12588246-B2 | Semiconductor structure including gate stack surrounding or wrapping around plurality of semiconductor layers or nanostructures and method for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-03-24 | — | — | US | disclosed |
| US-12581685-B2 | Semiconductor device and method of fabricating a semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-03-17 | — | — | US | disclosed |
| US-12575156-B2 | Reducing pattern loading in the etch-back of metal gate | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-03-10 | — | — | US | disclosed |
| US-12575121-B2 | Reducing fin wriggling in fin-thinning process | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-03-10 | — | — | US | disclosed |
| US-12568664-B2 | Semiconductor device and method of manufacturing thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-03-03 | — | — | US | disclosed |
| US-20260059731-A1 | SRAM OPTIMIZATION THROUGH STI HARD MASKS AND THE METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-02-26 | — | — | US | disclosed |
| US-12563803-B2 | Cut metal gate processes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-02-24 | — | — | US | disclosed |
| US-12563785-B2 | — | — | 2026-02-24 | — | — | US | disclosed |
| US-20260052964-A1 | SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATION THEREOF | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-02-19 | — | — | US | disclosed |
| US-20260052761-A1 | CPODE LANDING STRUCTURE ON INSULATOR SUBSTRATE AND THE METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-02-19 | — | — | US | disclosed |
| US-12557369-B2 | Gate profile control through sidewall protection during etching | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-02-17 | — | — | US | disclosed |
| US-20260032988-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2026-01-29 | — | — | US | disclosed |
| US-12532494-B2 | Epitaxy regions with reduced loss control | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-01-20 | — | — | US | disclosed |
| US-12532721-B2 | Barrier-free approach for forming contact plugs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-20 | — | — | US | disclosed |
| US-12520553-B2 | Forming seams with desirable dimensions in isolation regions | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2026-01-06 | — | — | US | disclosed |
| US-12520565-B2 | Semiconductor structure and method for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2026-01-06 | — | — | US | disclosed |
| US-12513961-B2 | Selective etching to increase threshold voltage spread | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-30 | — | — | US | disclosed |
| US-12507439-B2 | Method for forming semiconductor structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-23 | — | — | US | disclosed |
| US-12507438-B2 | Semiconductor structure with contact rail and method for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-12-23 | — | — | US | disclosed |
| US-20250385125-A1 | STI PROTECTION LAYER FORMATION THROUGH IMPLANTATION AND THE STRUCTURES THEREOF | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-12-18 | — | — | US | disclosed |
| US-12495575-B2 | Multi-channel replacement metal gate device | GLOBALFOUNDRIES U.S. INC. (US) | 2025-12-09 | — | — | US | disclosed |
| US-20250372393-A1 | SEMICONDUCTOR DEVICES AND METHODS OF MAKING SEMICONDUCTOR DEVICES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-04 | — | — | US | disclosed |
| US-20250374514-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-04 | — | — | US | disclosed |
| US-20250374507-A1 | SEMICONDUCTOR STRUCTURE WITH IMPLANTED SOURCE/DRAIN STRUCTURE AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-04 | — | — | US | disclosed |
| US-20250374620-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-12-04 | — | — | US | disclosed |
| US-20250366154-A1 | PROTECTION LAYER FOR REDUCING STI LOSS AND THE METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-27 | — | — | US | disclosed |
| US-20250366155-A1 | PROTECTION LAYER FOR REDUCING STI LOSS AND THE METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-27 | — | — | US | disclosed |
| US-12482705-B2 | Conductive feature formation and structure using bottom-up filling deposition | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-11-25 | — | — | US | disclosed |
| US-20250357319-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359130-A1 | Semiconductor Device and Method of Manufacturing the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359210-A1 | THROUGH-SUBSTRATE VIA AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359121-A1 | DIELECTRIC LAYER FOR NANOSHEET PROTECTION AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250357348-A1 | BARRIER FREE TUNGSTEN LINER IN CONTACT PLUGS AND THE METHOD FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359172-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359103-A1 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359248-A1 | STI PROTECTION LAYER FORMATION THROUGH IMPLANTATION AND THE STRUCTURES THEREOF | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359101-A1 | SEMICONDUCTOR DEVICES AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250357105-A1 | ALUMINUM NITRIDE DIPOLE DOPANT FILM FOR TUNING MULTI-VT DEVICES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359291-A1 | CONTACT PLUGS WITH REDUCED R/C AND THE METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250359246-A1 | STI PROTECTION LAYER FORMATION THROUGH IMPLANTATION AND THE STRUCTURES THEREOF | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-20 | — | — | US | disclosed |
| US-20250349595-A1 | CONTROLLABLE OXIDE RECESS PROFILE THROUGH VARIOUS WET OXIDATION PROCESSES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-20250351481-A1 | GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-20250349545-A1 | VOLUME-LESS FLUORINE INCORPORATION METHOD | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-20250351423-A1 | CONTACT FORMATION WITH REDUCED DOPANT LOSS AND INCREASED DIMENSIONS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-20250351443-A1 | Semiconductor Structure with Contact Rail and Method for Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-20250351511-A1 | ISOLATION REGIONS WITH NON-UNIFORM DEPTHS AND METHODS FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-20250349594-A1 | CONTROLLABLE OXIDE RECESS PROFILE THROUGH VARIOUS WET OXIDATION PROCESSES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-20250349546-A1 | CONTACT RESISTANCE REDUCTION FOR TRANSISTORS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-20250351404-A1 | METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-13 | — | — | US | disclosed |
| US-12471342-B2 | NFET with aluminum-free work-function layer and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-11-11 | — | — | US | disclosed |
| US-20250343069-A1 | TRENCH FILLING THROUGH REFLOWING FILLING MATERIAL | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | disclosed |
| US-20250344428-A1 | SELECTIVE BOTTOM SEED LAYER FORMATION FOR BOTTOM-UP EPITAXY | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | disclosed |
| US-20250344476-A1 | SELECTIVE DEPOSITION OF MASK FOR REDUCING NANO SHEET LOSS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | disclosed |
| US-20250343068-A1 | FORMING ISOLATION REGIONS WITH LOW PARASITIC CAPACITANCE AND REDUCED DAMAGE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | disclosed |
| US-20250344423-A1 | TREATMENT FOR TUNING THRESHOLD VOLTAGES OF TRANSISTORS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | disclosed |
| US-20250344481-A1 | INNER SPACER FORMATION THROUGH STIMULATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | disclosed |
| US-20250344422-A1 | DUMMY HYBRID FILM FOR SELF ALIGNMENT CONTACT FORMATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | disclosed |
| US-20250344461-A1 | CONFINED SOURCE/DRAIN EPITAXY REGIONS AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | disclosed |
| US-20250343080-A1 | END POINT CONTROL IN ETCHING PROCESSES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-11-06 | — | — | US | disclosed |
| US-12464751-B2 | Contact plugs and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-04 | — | — | US | disclosed |
| US-12463040-B2 | Methods for doping high-K metal gates for tuning threshold voltages | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-04 | — | — | US | disclosed |
| US-12464804-B2 | Semiconductor structure and method for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-11-04 | — | — | US | disclosed |
| US-20250338567-A1 | LOWERING PMOSFET THRESHOLD VOLTAGE THROUGH TERNARY-ELEMENT NITRIDE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-30 | — | — | US | disclosed |
| US-20250338591-A1 | PROCESSES FOR REMOVING SPIKES FROM GATES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-30 | — | — | US | disclosed |
| US-20250338557-A1 | METHOD TO ACHIEVE LOW CONTACT RESISTANCE AND THE STRUCTURES THEREOF | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-30 | — | — | US | disclosed |
| US-20250338531-A1 | EPITAXY REGIONS WITH REDUCED LOSS CONTROL | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-30 | — | — | US | disclosed |
| US-20250338560-A1 | METHOD TO ACHIEVE LOW CONTACT RESISTANCE AND THE STRUCTURES THEREOF | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-30 | — | — | US | disclosed |
| US-20250338614-A1 | EXTENDED SIDE CONTACTS FOR TRANSISTORS AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-30 | — | — | US | disclosed |
| US-20250338527-A1 | NANOSTRUCTURE PROFILE IN GAA AND THE METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-30 | — | — | US | disclosed |
| US-20250336714-A1 | ISOLATION REGIONS FOR ISOLATING TRANSISTORS AND THE METHODS FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-30 | — | — | US | disclosed |
| US-20250338594-A1 | CONDUCTIVE CAPPING FOR WORK FUNCTION LAYER AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-30 | — | — | US | disclosed |
| US-20250329576-A1 | DEPOSITING AND OXIDIZING SILICON LINER FOR FORMING ISOLATION REGIONS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-23 | — | — | US | disclosed |
| US-20250331252-A1 | TREATING THE DIELECTRIC FILMS UNDER THE BOTTOMS OF SOURCE/DRAIN REGIONS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-23 | — | — | US | disclosed |
| US-20250331266-A1 | SELECTIVE FORMATION OF ETCH STOP LAYERS AND THE STRUCTURES THEREOF | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-23 | — | — | US | disclosed |
| US-20250331276-A1 | ISOLATION LAYERS FOR REDUCING LEAKAGES BETWEEN CONTACTS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-23 | — | — | US | disclosed |
| US-12451390-B2 | Trench filling through reflowing filling material | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-10-21 | — | — | US | disclosed |
| US-20250323183-A1 | SEMICONDUCTOR DEVICE WITH SEAL RING STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-16 | — | — | US | disclosed |
| US-20250323143-A1 | SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-16 | — | — | US | disclosed |
| US-20250318206-A1 | LOWERING PMOSFET THRESHOLD VOLTAGE THROUGH TERNARY-ELEMENT NITRIDE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-10-09 | — | — | US | disclosed |
| US-20250318249-A1 | GATE PROFILE CONTROL THROUGH SIDEWALL PROTECTION DURING ETCHING | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-09 | — | — | US | disclosed |
| US-12439657-B2 | Confined source/drain epitaxy regions and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-07 | — | — | US | disclosed |
| US-12439625-B2 | Semiconductor device structure and method for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-10-07 | — | — | US | disclosed |
| US-20250308906-A1 | DIPOLE-ENGINEERED HIGH-K GATE DIELECTRIC AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-02 | — | — | US | disclosed |
| US-20250308905-A1 | METHOD FORMING GATE STACKS ADOPTING THIN SILICON CAP | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-02 | — | — | US | disclosed |
| US-20250311280-A1 | CONTACT INTERFACE ENGINEERING FOR REDUCING CONTACT RESISTANCE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-02 | — | — | US | disclosed |
| US-20250308904-A1 | METHODS FOR DOPING HIGH-K METAL GATES FOR TUNING THRESHOLD VOLTAGES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-10-02 | — | — | US | disclosed |
| US-12433018-B2 | Extended side contacts for transistors and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-09-30 | — | — | US | disclosed |
| US-20250301755-A1 | CAPPING LAYERS IN METAL GATES OF TRANSISTORS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-25 | — | — | US | disclosed |
| US-20250301756-A1 | NANO-STRUCTURE TRANSISTORS WITH AIR INNER SPACERS AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-25 | — | — | US | disclosed |
| US-20250299958-A1 | SILICON INTERMIXING LAYER FOR BLOCKING DIFFUSION | TAIWAN SSEMICONDUCTOR MFG CO LTD (TW) | 2025-09-25 | — | — | US | disclosed |
| US-20250301694-A1 | INTER BLOCK FOR RECESSED CONTACTS AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-25 | — | — | US | disclosed |
| US-20250300016-A1 | METAL GATES OF TRANSISTORS HAVING REDUCED RESISTIVITY | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-25 | — | — | US | disclosed |
| US-20250301746-A1 | REDUCING K VALUES OF DIELECTRIC FILMS THROUGH ANNEAL | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-25 | — | — | US | disclosed |
| US-20250301742-A1 | METHOD FOR FORMING SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-25 | — | — | US | disclosed |
| US-20250301757-A1 | AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-25 | — | — | US | disclosed |
| US-12426335-B2 | Reducing k values of dielectric films through anneal | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-09-23 | — | — | US | disclosed |
| US-20250294832-A1 | CONTACT FORMATION FOR BACK SIDE POWER DISTRIBUTION | APPLIED MATERIALS, INC. (US) | 2025-09-18 | — | — | US | disclosed |
| US-20250293054-A1 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-18 | — | — | US | disclosed |
| US-20250287629-A1 | Semiconductor Devices and Methods of Manufacture | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-11 | — | — | US | disclosed |
| US-20250287677-A1 | DEVICE PROVIDING MULTIPLE THRESHOLD VOLTAGES AND METHODS OF MAKING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-11 | — | — | US | disclosed |
| US-20250287628-A1 | Contact with a Silicide Region | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-09-11 | — | — | US | disclosed |
| US-20250287625-A1 | NANOSTRUCTURE PROFILE IN GAA AND THE METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-09-11 | — | — | US | disclosed |
| US-12414281-B2 | Implantations for forming source/drain regions of different transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-09 | — | — | US | disclosed |
| US-12408412-B2 | Air spacers around contact plugs and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-09-02 | — | — | US | disclosed |
| US-20250275208-A1 | NON-CONFORMAL GATE OXIDE FORMATION ON FinFET | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-08-28 | — | — | US | disclosed |
| US-12394624-B2 | Silicon intermixing layer for blocking diffusion | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-08-19 | — | — | US | disclosed |
| US-12396242-B2 | Nano-structure transistors with air inner spacers and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-08-19 | — | — | US | disclosed |
| US-20250259890-A1 | PHASE CONTROL IN CONTACT FORMATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-08-14 | — | — | US | disclosed |
| US-12387935-B2 | Dipole-engineered high-k gate dielectric and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-08-12 | — | — | US | disclosed |
| US-20250254956-A1 | DUAL DAMASCENE STRUCTURE IN FORMING SOURCE/DRAIN CONTACTS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-08-07 | — | — | US | disclosed |
| US-20250254897-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2025-08-07 | — | — | US | disclosed |
| US-20250248108-A1 | Dummy Fin with Reduced Height and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-07-31 | — | — | US | disclosed |
| US-12376361-B2 | Capping layers in metal gates of transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-29 | — | — | US | disclosed |
| US-12369342-B2 | Increasing source/drain dopant concentration to reduced resistance | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-22 | — | — | US | disclosed |
| US-12368060-B2 | Semiconductor devices and methods of manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-22 | — | — | US | disclosed |
| US-12369293-B2 | Conductive feature formation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-07-22 | — | — | US | disclosed |
| US-12362185-B2 | Method forming gate stacks adopting thin silicon cap | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-07-15 | — | — | US | disclosed |
| US-20250227983-A1 | FIN BENDING REDUCTION THROUGH STRUCTURE DESIGN | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-07-10 | — | — | US | disclosed |
| US-12356688-B2 | Method for forming semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-08 | — | — | US | disclosed |
| US-20250221006-A1 | INTERCONNECT FEATURES WITH SHARP CORNERS AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-07-03 | — | — | US | disclosed |
| US-12347729-B2 | Metal gates of transistors having reduced resistivity | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-01 | — | — | US | disclosed |
| US-12349379-B2 | Semiconductor devices and methods of manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-07-01 | — | — | US | disclosed |
| US-12349395-B2 | Inter block for recessed contacts and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-07-01 | — | — | US | disclosed |
| US-20250210414-A1 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-06-26 | — | — | US | disclosed |
| US-20250203969-A1 | Treating the Dielectric Films Under the Bottoms of Source/Drain Regions | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-06-19 | — | — | US | disclosed |
| US-20250201556-A1 | MULTI-LAYER PHOTO ETCHING MASK INCLUDING ORGANIC AND INORGANIC MATERIALS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-06-19 | — | — | US | disclosed |
| US-12336248-B2 | Non-conformal gate oxide formation on FinFET | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-06-17 | — | — | US | disclosed |
| CN-113224006-B | Metal gate modulator and in-situ forming method thereof | 台湾积体电路制造股份有限公司 | 2025-06-17 | — | — | CN | disclosed |
| US-20250194222-A1 | METHOD OF FORMING THIN DUMMY SIDEWALL SPACERS FOR TRANSISTORS WITH REDUCED PITCHES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-06-12 | — | — | US | disclosed |
| US-12328929-B2 | Method of forming thin dummy sidewall spacers for transistors with reduced pitches | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-06-10 | — | — | US | disclosed |
| US-12328890-B2 | Contact with a silicide region | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-06-10 | — | — | US | disclosed |
| US-20250185329-A1 | SELECTIVE FORMATION OF ETCH STOP LAYERS AND THE STRUCTURES THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-06-05 | — | — | US | disclosed |
| US-12322658-B2 | Dummy fin with reduced height and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-06-03 | — | — | US | disclosed |
| US-12324220-B2 | Semiconductor structure and method for manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2025-06-03 | — | — | US | disclosed |
| CN-112750768-B | Dummy gate cutting process and resulting gate structure | 台湾积体电路制造股份有限公司 | 2025-05-30 | — | — | CN | disclosed |
| US-12317574-B2 | Device providing multiple threshold voltages and methods of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-05-27 | — | — | US | disclosed |
| US-20250169170-A1 | Transistors with Recessed Silicon Cap and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-05-22 | — | — | US | disclosed |
| US-12310077-B2 | Dual damascene structure in forming source/drain contacts | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-05-20 | — | — | US | disclosed |
| US-20250159924-A1 | CUT-FIN ISOLATION REGIONS AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-05-15 | — | — | US | disclosed |
| US-20250157938-A1 | SEMICONDUCTOR STRUCTURE HAVING RAISED VIA CONTACTS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-05-15 | — | — | US | disclosed |
| US-12302595-B2 | Dummy hybrid film for self-alignment contact formation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-05-13 | — | — | US | disclosed |
| US-12302599-B2 | Semiconductor device and formation method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-05-13 | — | — | US | disclosed |
| CN-111863620-B | Integrated circuit device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2025-05-09 | — | — | CN | disclosed |
| US-20250149388-A1 | Gate Formation Of Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-05-08 | — | — | US | disclosed |
| CN-112750771-B | Fin end gate structure and method of forming the same | 台湾积体电路制造股份有限公司 | 2025-05-06 | — | — | CN | disclosed |
| CN-113078110-B | Trench fill by reflow fill material | 台湾积体电路制造股份有限公司 | 2025-05-06 | — | — | CN | disclosed |
| US-12293916-B2 | Surface oxidation control of metal gates using capping layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-05-06 | — | — | US | disclosed |
| CN-112510090-B | Integrated circuit device and method of forming the same | 台湾积体电路制造股份有限公司 | 2025-05-02 | — | — | CN | disclosed |
| CN-113097304-B | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2025-05-02 | — | — | CN | disclosed |
| CN-112420612-B | FINFET contact and method of forming the same | 台湾积体电路制造股份有限公司 | 2025-05-02 | — | — | CN | disclosed |
| US-20250142900-A1 | GATE OXIDE OF NANOSTRUCTURE TRANSISTOR WITH INCREASED CORNER THICKNESS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-05-01 | — | — | US | disclosed |
| CN-119907280-A | Processing dielectric film under bottom of source/drain regions | 台湾积体电路制造股份有限公司 | 2025-04-29 | — | — | CN | disclosed |
| US-12288716-B2 | Phase control in contact formation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-04-29 | — | — | US | disclosed |
| CN-112309867-B | Fin thinning by feedback control | 台湾积体电路制造股份有限公司 | 2025-04-29 | — | — | CN | disclosed |
| US-12288721-B2 | Fin bending reduction through structure design | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-04-29 | — | — | US | disclosed |
| US-12288723-B2 | Semiconductor device and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-04-29 | — | — | US | disclosed |
| US-20250132191-A1 | FORMING ISOLATION REGIONS WITH LOW PARASITIC CAPACITANCE AND REDUCED DAMAGE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-04-24 | — | — | US | disclosed |
| US-20250133759-A1 | TREATMENT FOR TUNING THRESHOLD VOLTAGES OF TRANSISTORS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-04-24 | — | — | US | disclosed |
| US-12283617-B2 | Interconnect features with sharp corners and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-04-22 | — | — | US | disclosed |
| CN-111834297-B | Integrated circuit device and method for manufacturing integrated circuit device | 台湾积体电路制造股份有限公司 | 2025-04-18 | — | — | CN | disclosed |
| US-20250126839-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-04-17 | — | — | US | disclosed |
| US-20250126841-A1 | FORMING ISOLATION REGIONS WITH LOW PARASITIC CAPACITANCE AND REDUCED DAMAGE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-04-17 | — | — | US | disclosed |
| US-12278141-B2 | Semiconductor devices and methods of manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-04-15 | — | — | US | disclosed |
| CN-119815900-A | Selectively forming an etch stop layer and structure thereof | 台湾积体电路制造股份有限公司 | 2025-04-11 | — | — | CN | disclosed |
| US-12272553-B2 | Multi-layer photo etching mask including organic and inorganic materials | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-04-08 | — | — | US | disclosed |
| US-12266655-B2 | Transistors with recessed silicon cap and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-04-01 | — | — | US | disclosed |
| US-12266704-B2 | Semiconductor devices including horizontal gate-all-around (hGAA) nanostructure transistors and methods of forming | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-04-01 | — | — | US | disclosed |
| CN-112530870-B | Method for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2025-03-28 | — | — | CN | disclosed |
| US-12261042-B2 | Forming nitrogen-containing layers as oxidation blocking layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-03-25 | — | — | US | disclosed |
| US-12261036-B2 | Forming low-stress silicon nitride layer through hydrogen treatment | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-03-25 | — | — | US | disclosed |
| US-12261213-B2 | Fin-end gate structures and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-03-25 | — | — | US | disclosed |
| CN-109817581-B | Method for forming semiconductor structure | 台湾积体电路制造股份有限公司 | 2025-03-25 | — | — | CN | disclosed |
| US-20250098206-A1 | CONTACT FORMATION WITH REDUCED DOPANT LOSS AND INCREASED DIMENSIONS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-03-20 | — | — | US | disclosed |
| US-20250098282-A1 | INCREASE THE VOLUME OF EPITAXY REGIONS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-03-20 | — | — | US | disclosed |
| US-20250096041-A1 | BOTTOM LATERAL EXPANSION OF CONTACT PLUGS THROUGH IMPLANTATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-03-20 | — | — | US | disclosed |
| US-20250087578-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-03-13 | — | — | US | disclosed |
| US-20250087528-A1 | FORMING ISOLATION REGIONS WITH LOW PARASITIC CAPACITANCE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-03-13 | — | — | US | disclosed |
| US-20250087486-A1 | SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-03-13 | — | — | US | disclosed |
| US-20250089330-A1 | SELECTIVE DEPOSITION OF MASK FOR REDUCING NANO SHEET LOSS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-03-13 | — | — | US | disclosed |
| US-20250087491-A1 | CONTACT RESISTANCE REDUCTION FOR TRANSISTORS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-03-13 | — | — | US | disclosed |
| US-20250081508-A1 | Semiconductor Device and Method of Manufacturing the Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-03-06 | — | — | US | disclosed |
| CN-119562544-A | Tuning transistor threshold voltage | 台湾积体电路制造股份有限公司 | 2025-03-04 | — | — | CN | disclosed |
| US-12243826-B2 | Method for manufacturing semiconductor structure having raised via contacts | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-03-04 | — | — | US | disclosed |
| CN-119562585-A | Forming isolation regions with low parasitic capacitance and reduced damage | 台湾积体电路制造股份有限公司 | 2025-03-04 | — | — | CN | disclosed |
| US-20250070052-A1 | SEMICONDUCTOR DEVICE WITH SEAL RING STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-02-27 | — | — | US | disclosed |
| US-12237397-B2 | Partial directional etch method and resulting structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-02-25 | — | — | US | disclosed |
| US-12237416-B2 | Cut-fin isolation regions and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-02-25 | — | — | US | disclosed |
| CN-119521735-A | Forming isolation regions with low parasitic capacitance and reduced damage | 台湾积体电路制造股份有限公司 | 2025-02-25 | — | — | CN | disclosed |
| CN-119521715-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2025-02-25 | — | — | CN | disclosed |
| US-20250063749-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-02-20 | — | — | US | disclosed |
| US-20250063778-A1 | GATE STRUCTURE IN SEMICONDUCTOR METHOD AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-02-20 | — | — | US | disclosed |
| CN-222509863-U | Semiconductor device with a semiconductor element having a plurality of electrodes | 台湾积体电路制造股份有限公司 | 2025-02-18 | — | — | CN | disclosed |
| US-20250056823-A1 | CONTROLLING FIN-THINNING THROUGH FEEDBACK | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2025-02-13 | — | — | US | disclosed |
| US-12218197-B2 | Gate oxide of nanostructure transistor with increased corner thickness | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-02-04 | — | — | US | disclosed |
| WO-2025022964-A1 | PHTHALOCYANINE DYE, METHOD FOR PRODUCING SAME, AND DRUG CONTAINING PHTHALOCYANINE DYE | 慶應義塾 | 2025-01-30 | — | — | WO | disclosed |
| CN-119364841-A | Forming isolation regions with low parasitic capacitance | 台湾积体电路制造股份有限公司 | 2025-01-24 | — | — | CN | disclosed |
| US-20250031426-A1 | GATE HEIGHT OPTIMIZATION | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-01-23 | — | — | US | disclosed |
| US-12206012-B2 | Reducing K values of dielectric films through anneal | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-01-21 | — | — | US | disclosed |
| US-12206011-B2 | Dummy gate cutting process and resulting gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-01-21 | — | — | US | disclosed |
| US-12199156-B2 | Contact formation with reduced dopant loss and increased dimensions | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-01-14 | — | — | US | disclosed |
| CN-119317129-A | Selective deposition of masks for reduced nanoplatelet loss | 台湾积体电路制造股份有限公司 | 2025-01-14 | — | — | CN | disclosed |
| CN-112992788-B | Method for controlling gate formation of semiconductor device and system for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2025-01-14 | — | — | CN | disclosed |
| US-12198988-B2 | Gate formation of semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD (TW) | 2025-01-14 | — | — | US | disclosed |
| CN-113054021-B | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2025-01-10 | — | — | CN | disclosed |
| US-20250015160-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-01-09 | — | — | US | disclosed |
| US-12191206-B2 | Method of manufacturing fin spacers having different heights using a polymer-generating etching process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-01-07 | — | — | US | disclosed |
| US-12191145-B2 | Semiconductor device and formation method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2025-01-07 | — | — | US | disclosed |
| US-12191151-B2 | Gate-all-around transistor with reduced source/drain contact resistance | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-01-07 | — | — | US | disclosed |
| US-12183638-B2 | In-situ formation of metal gate modulators | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-31 | — | — | US | disclosed |
| US-12183590-B2 | Method of performing gap filling including filling trenches between dummy gate stacks on semiconductor fins/strips with semiconductor material | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-12-31 | — | — | US | disclosed |
| US-12183629-B2 | Selective hybrid capping layer for metal gates of transistors | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-31 | — | — | US | disclosed |
| US-12183632-B2 | Bottom lateral expansion of contact plugs through implantation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-31 | — | — | US | disclosed |
| US-20240429308-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-12-26 | — | — | US | disclosed |
| US-20240429313-A1 | SELECTIVE BOTTOM SEED LAYER FORMATION FOR BOTTOM-UP EPITAXY | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-26 | — | — | US | disclosed |
| US-12176401-B2 | Seam-filling of metal gates with Si-containing layers | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-24 | — | — | US | disclosed |
| CN-119181707-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2024-12-24 | — | — | CN | disclosed |
| US-12176415-B2 | Device with a dummy fin contacting a gate isolation region | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-24 | — | — | US | disclosed |
| CN-112582403-B | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2024-12-24 | — | — | CN | disclosed |
| US-12176422-B2 | Controlling fin-thinning through feedback | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-12-24 | — | — | US | disclosed |
| CN-113284950-B | Method for forming semiconductor device and semiconductor device | 台湾积体电路制造股份有限公司 | 2024-12-24 | — | — | CN | disclosed |
| CN-119170497-A | Method for forming semiconductor device structure | 台湾积体电路制造股份有限公司 | 2024-12-20 | — | — | CN | disclosed |
| US-20240421211-A1 | DUMMY GATE CUTTING PROCESS AND RESULTING GATE STRUCTURES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-12-19 | — | — | US | disclosed |
| US-20240413020-A1 | Contact Plugs With Reduced R/C and the Methods of Forming The Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-12 | — | — | US | disclosed |
| US-20240413215-A1 | INNER SPACER FORMATION THROUGH STIMULATION | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-12 | — | — | US | disclosed |
| US-12165936-B2 | End point control in etching processes | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-10 | — | — | US | disclosed |
| US-12166074-B2 | Gate structure in semiconductor device and method of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-10 | — | — | US | disclosed |
| CN-112530868-B | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2024-12-06 | — | — | CN | disclosed |
| US-20240405069-A1 | THROUGH-SUBSTRATE VIA AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-12-05 | — | — | US | disclosed |
| US-20240395932-A1 | WRAPAROUND GATE STRUCTURE | GLOBALFOUNDRIES U.S. INC. | 2024-11-28 | — | — | US | disclosed |
| US-12154974-B2 | Source/drain formation with reduced selective loss defects | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-11-26 | — | — | US | disclosed |
| US-20240387277-A1 | MULTIPLE THRESHOLD VOLTAGE IMPLEMENTATION THROUGH LANTHANUM INCORPORATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387238-A1 | SILICON OXIDE LAYER FOR OXIDATION RESISTANCE AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387266-A1 | RECESSED CONTACTS AT LINE END AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387178-A1 | TUNING THRESHOLD VOLTAGE THROUGH META STABLE PLASMA TREATMENT | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387729-A1 | METHOD OF MODULATING STRESS OF DIELECTRIC LAYERS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387647-A1 | SEAM-FILLING OF METAL GATES WITH SI-CONTAINING LAYERS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387662-A1 | Semiconductor Devices and Methods | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387179-A1 | SURFACE OXIDATION CONTROL OF METAL GATES USING CAPPING LAYER | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387702-A1 | SOURCE/DRAIN FORMATION WITH REDUCED SELECTIVE LOSS DEFECTS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-20240387257-A1 | SELECTIVE HYBRID CAPPING LAYER FOR METAL GATES OF TRANSISTORS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-21 | — | — | US | disclosed |
| US-12148652-B2 | Silicon oxide layer for oxidation resistance and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-19 | — | — | US | disclosed |
| US-12148620-B2 | Tuning threshold voltage through meta stable plasma treatment | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-19 | — | — | US | disclosed |
| US-12148659-B2 | Contact conductive feature formation and structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-19 | — | — | US | disclosed |
| US-20240379346-A1 | FORMING LOW-STRESS SILICON NITRIDE LAYER THROUGH HYDROGEN TREATMENT | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379815-A1 | DUMMY HYBRID FILM FOR SELF ALIGNMENT CONTACT FORMATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379457-A1 | METHOD FOR MANUFACTURING A SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379433-A1 | CONDUCTIVE FEATURE FORMATION AND STRUCTURE USING BOTTOM-UP FILLING DEPOSITION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379819-A1 | PARTIAL DIRECTIONAL ETCH METHOD AND RESULTING STRUCTURES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379821-A1 | FIN-END GATE STRUCTURES AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379348-A1 | Deposition Process for Forming Semiconductor Device and System | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379419-A1 | SEMICONDUCTOR STRUCTURE HAVING SEAM SEALED | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379407-A1 | TRENCH FILLING THROUGH REFLOWING FILLING MATERIAL | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379365-A1 | METHODS FOR DOPING HIGH-K METAL GATES FOR TUNING THRESHOLD VOLTAGES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379470-A1 | END POINT CONTROL IN ETCHING PROCESSES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379448-A1 | IN-SITU FORMATION OF METAL GATE MODULATORS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379350-A1 | FORMING NITROGEN-CONTAINING LAYERS AS OXIDATION BLOCKING LAYERS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379777-A1 | NFET with Aluminum-Free Work-Function Layer and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379818-A1 | DEVICE WITH A DUMMY FIN CONTACTING A GATE ISOLATION REGION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-20240379776-A1 | SELECTIVE ETCHING TO INCREASE THRESHOLD VOLTAGE SPREAD | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-14 | — | — | US | disclosed |
| US-12138308-B2 | Polymer composite for helicobacter pylori recognition and composition for photodynamic therapy comprising same | ENBIAR INC. (KR) | 2024-11-12 | — | — | US | disclosed |
| US-20240371868-A1 | BURIED METAL TRACK AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-07 | — | — | US | disclosed |
| US-20240371873-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-07 | — | — | US | disclosed |
| US-20240371973-A1 | ETCHING BACK AND SELECTIVE DEPOSITION OF METAL GATE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-07 | — | — | US | disclosed |
| US-20240371691-A1 | BOTTOM-UP FORMATION OF CONTACT PLUGS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-07 | — | — | US | disclosed |
| US-20240371979-A1 | DUMMY FIN PROFILE CONTROL TO ENLARGE GATE PROCESS WINDOW | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-07 | — | — | US | disclosed |
| US-20240371919-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-11-07 | — | — | US | disclosed |
| US-20240371964-A1 | TRANSISTORS WITH REDUCED DEFECT AND METHODS FORMING SAME | MORE SHAHAJI B (TW) | 2024-11-07 | — | — | US | disclosed |
| US-20240373613-A1 | Conductive Feature Formation | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-07 | — | — | US | disclosed |
| US-20240371956-A1 | CONDUCTIVE CAPPING FOR WORK FUNCTION LAYER AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-11-07 | — | — | US | disclosed |
| CN-118888443-A | Selective bottom seed layer formation for bottom-up epitaxy | 台湾积体电路制造股份有限公司 | 2024-11-01 | — | — | CN | disclosed |
| US-20240363729-A1 | METHOD FOR FORMING AN UNDOPED REGION UNDER A SOURCE/DRAIN | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-31 | — | — | US | disclosed |
| US-20240363354-A1 | LOW-TEMPERATURE SELECTIVE EPITAXY CONTACT APPROACH | APPLIED MATERIALS, INC. | 2024-10-31 | — | — | US | disclosed |
| US-20240363399-A1 | REDUCING SPACING BETWEEN CONDUCTIVE FEATURES THROUGH IMPLANTATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-31 | — | — | US | disclosed |
| US-20240363718-A1 | COMPOSITE WORK FUNCTION LAYER FORMATION USING SAME WORK FUNCTION MATERIAL | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-31 | — | — | US | disclosed |
| WO-2024226350-A1 | LOW-TEMPERATURE SELECTIVE EPITAXY CONTACT APPROACH | APPLIED MATERIALS, INC. (US) | 2024-10-31 | — | — | WO | disclosed |
| US-20240363440-A1 | HYBRID SOURCE DRAIN REGIONS FORMED BASED ON SAME FIN AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-31 | — | — | US | disclosed |
| US-20240363425-A1 | MULTI-CHANNEL DEVICES AND METHODS OF MANUFACTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-31 | — | — | US | disclosed |
| US-20240363442-A1 | NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lanthanum Oxide Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-31 | — | — | US | disclosed |
| US-20240363432-A1 | HYBRID ISOLATION REGIONS HAVING UPPER AND LOWER PORTIONS WITH SEAMS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-31 | — | — | US | disclosed |
| US-20240363627-A1 | METHOD OF TUNING THRESHOLD VOLTAGES OF TRANSISTORS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-31 | — | — | US | disclosed |
| US-12132089-B2 | Methods for forming recesses in source/drain regions and devices formed thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-29 | — | — | US | disclosed |
| US-12131949-B2 | Bottom-up formation of contact plugs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD (TW) | 2024-10-29 | — | — | US | disclosed |
| US-20240355875-A1 | SHALLOW TRENCH ISOLATION (STI) CONTACT STRUCTURES AND METHODS OF FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-24 | — | — | US | disclosed |
| US-20240355740-A1 | Barrier Free Tungsten Liner in Contact Plugs and The Method Forming the Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-24 | — | — | US | disclosed |
| US-20240355910-A1 | INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-24 | — | — | US | disclosed |
| US-12125892-B2 | Transistors with reduced defect and methods of forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-22 | — | — | US | disclosed |
| US-12125747-B2 | Bottom-up formation of contact plugs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-22 | — | — | US | disclosed |
| CN-118825055-A | Formation of internal spacers by stimulation | 台湾积体电路制造股份有限公司 | 2024-10-22 | — | — | CN | disclosed |
| US-12125850-B2 | Buried metal track and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-22 | — | — | US | disclosed |
| CN-118824943-A | Contact plug with reduced R/C and method of forming the same | 台湾积体电路制造股份有限公司 | 2024-10-22 | — | — | CN | disclosed |
| US-12125897-B2 | Air spacers in transistors and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-22 | — | — | US | disclosed |
| US-12125911-B2 | Method of modulating stress of dielectric layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD (TW) | 2024-10-22 | — | — | US | disclosed |
| US-20240347623-A1 | DIELECTRIC SPACER TO PREVENT CONTACTING SHORTING | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-17 | — | — | US | disclosed |
| US-20240347622-A1 | NON-CONFORMAL CAPPING LAYER AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-17 | — | — | US | disclosed |
| US-20240347594-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-17 | — | — | US | disclosed |
| US-12119270-B2 | Hybrid source drain regions formed based on same fin and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-15 | — | — | US | disclosed |
| US-12119386-B2 | Conductive capping for work function layer and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-15 | — | — | US | disclosed |
| US-12112977-B2 | Reducing spacing between conductive features through implantation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-08 | — | — | US | disclosed |
| US-12112942-B2 | Deposition process for forming semiconductor device and system | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-08 | — | — | US | disclosed |
| US-12112988-B2 | Hybrid isolation regions having upper and lower portions with seams | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-08 | — | — | US | disclosed |
| US-12113122-B2 | Dummy fin profile control to enlarge gate process window | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-08 | — | — | US | disclosed |
| US-20240332076-A1 | CONDUCTIVE FEATURE FORMATION AND STRUCTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-10-03 | — | — | US | disclosed |
| US-20240332004-A1 | Aluminum Nitride Dipole Dopant Film for Tuning Multi-VT Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-03 | — | — | US | disclosed |
| US-20240332382-A1 | DEVICE PROVIDING MULTIPLE THRESHOLD VOLTAGES AND METHODS OF MAKING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-03 | — | — | US | disclosed |
| US-12107015-B2 | NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-10-01 | — | — | US | disclosed |
| US-12107007-B2 | Recessed contacts at line end and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-10-01 | — | — | US | disclosed |
| US-20240322010-A1 | REDUCING PATTERN LOADING IN THE ETCH-BACK OF METAL GATE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-09-26 | — | — | US | disclosed |
| US-12100738-B2 | Semiconductor device with implant and method of manufacturing same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-24 | — | — | US | disclosed |
| CN-118692915-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2024-09-24 | — | — | CN | disclosed |
| US-20240312843-A1 | Fin Isolation Regions With Improved Depth Distribution and Methods Forming the Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-09-19 | — | — | US | disclosed |
| US-20240313091-A1 | SEMICONDUCTOR STRUCTURE HAVING DIELECTRIC STRUCTURE EXTENDING INTO SECOND CAVITY OF SEMICONDUCTOR FIN | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-09-19 | — | — | US | disclosed |
| US-12094768-B2 | Method for sealing a seam, semiconductor structure, and method for manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-17 | — | — | US | disclosed |
| US-12096609-B2 | Conductive feature formation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-09-17 | — | — | US | disclosed |
| US-12094953-B2 | Semiconductor manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-17 | — | — | US | disclosed |
| US-12094757-B2 | Method for manufacturing semiconductor device with semiconductor capping layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-17 | — | — | US | disclosed |
| US-20240304449-A1 | Dipole-Engineered High-K Gate Dielectric and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-09-12 | — | — | US | disclosed |
| US-20240304496-A1 | Forming Isolation Regions for Separating Fins and Gate Stacks | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-09-12 | — | — | US | disclosed |
| US-12087638-B2 | Multi-channel devices and methods of manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-09-10 | — | — | US | disclosed |
| US-12087616-B2 | Air gap formation method | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-10 | — | — | US | disclosed |
| US-12087767-B2 | Method of tuning threshold voltages of transistors | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-09-10 | — | — | US | disclosed |
| US-20240297217-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-05 | — | — | US | disclosed |
| US-20240297235-A1 | AIR SPACERS AROUND CONTACT PLUGS AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-09-05 | — | — | US | disclosed |
| US-20240297080-A1 | Adjusting Work Function Through Adjusting Deposition Temperature | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-09-05 | — | — | US | disclosed |
| US-12080751-B2 | Semiconductor device structure and methods of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-09-03 | — | — | US | disclosed |
| US-12080777-B2 | Composite work function layer formation using same work function material | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-09-03 | — | — | US | disclosed |
| US-20240290620-A1 | CUT METAL GATE PROCESSES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-08-29 | — | — | US | disclosed |
| US-20240290661-A1 | SLOT CONTACTS AND METHOD FORMING SAME | TAIWAN SEMICONDUSTOR MFG CO LTD (TW) | 2024-08-29 | — | — | US | disclosed |
| US-12074167-B2 | Hybrid scheme for improved performance for P-type and N-type FinFETs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-08-27 | — | — | US | disclosed |
| US-20240282626-A1 | PHASE CONTROL IN CONTACT FORMATION | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-08-22 | — | — | US | disclosed |
| US-12068191-B2 | Low-resistance contact plugs and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-08-20 | — | — | US | disclosed |
| US-12068393-B2 | Etching back and selective deposition of metal gate | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-08-20 | — | — | US | disclosed |
| US-12068195-B2 | Metal loss prevention using implantation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-08-20 | — | — | US | disclosed |
| US-12068368-B2 | Shallow trench isolation (STI) contact structures and methods of forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-08-20 | — | — | US | disclosed |
| US-12068395-B2 | Method for forming an undoped region under a source/drain | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-08-20 | — | — | US | disclosed |
| US-20240274465-A1 | Depositing and Oxidizing Silicon Liner for Forming Isolation Regions | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-08-15 | — | — | US | disclosed |
| US-12062710-B2 | Increasing source/drain dopant concentration to reduced resistance | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-08-13 | — | — | US | disclosed |
| CN-118448251-A | Aluminum nitride dipole dopant films for modulating multi-VT devices | 台湾积体电路制造股份有限公司 | 2024-08-06 | — | — | CN | disclosed |
| US-20240258394-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-08-01 | — | — | US | disclosed |
| US-12051735-B2 | Dielectric spacer to prevent contacting shorting | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-07-30 | — | — | US | disclosed |
| US-20240250134-A1 | Semiconductor Structure with Contact Rail and Method for Forming the Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-25 | — | — | US | disclosed |
| US-20240250153-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-07-25 | — | — | US | disclosed |
| US-20240251537-A1 | Implantations for Forming Source/Drain Regions of Different Transistors | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-07-25 | — | — | US | disclosed |
| US-12046475-B2 | Surface oxidation control of metal gates using capping layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-23 | — | — | US | disclosed |
| US-12046660-B2 | Non-conformal capping layer and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-07-23 | — | — | US | disclosed |
| US-12046510-B2 | Conductive feature formation and structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-23 | — | — | US | disclosed |
| EP-4401123-A1 | DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS | GlobalFoundries U.S. Inc. (US) | 2024-07-17 | — | — | EP | disclosed |
| CN-118335738-A | Device with isolation structure in active region | 格芯(美国)集成电路科技有限公司 | 2024-07-12 | — | — | CN | disclosed |
| US-20240234527-A1 | INTER BLOCK FOR RECESSED CONTACTS AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-07-11 | — | — | US | disclosed |
| US-20240234425-A1 | DEVICE WITH ISOLATION STRUCTURES IN ACTIVE REGIONS | GLOBALFOUNDRIES U.S. INC. | 2024-07-11 | — | — | US | disclosed |
| US-12034059-B2 | Reducing pattern loading in the etch-back of metal gate | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-07-09 | — | — | US | disclosed |
| US-20240222108-A1 | CONTROLLING THRESHOLD VOLTAGES THROUGH BLOCKING LAYERS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-07-04 | — | — | US | disclosed |
| US-20240222460-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-07-04 | — | — | US | disclosed |
| US-12027608-B2 | Semiconductor structure having dielectric structure extending into second cavity of semiconductor Fin | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-02 | — | — | US | disclosed |
| US-12027423-B2 | Forming isolation regions for separating fins and gate stacks | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-07-02 | — | — | US | disclosed |
| US-20240213316-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-06-27 | — | — | US | disclosed |
| US-12020941-B2 | Dipole-engineered high-k gate dielectric and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-06-25 | — | — | US | disclosed |
| CN-110970303-B | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2024-06-21 | — | — | CN | disclosed |
| US-20240204044-A1 | Confined Source/Drain Epitaxy Regions and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-06-20 | — | — | US | disclosed |
| US-12015071-B2 | Air spacers around contact plugs and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-06-18 | — | — | US | disclosed |
| US-12009400-B2 | Device providing multiple threshold voltages and methods of making the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-06-11 | — | — | US | disclosed |
| US-12009264-B2 | Adjusting work function through adjusting deposition temperature | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-06-11 | — | — | US | disclosed |
| US-12009265-B2 | Slot contacts and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-06-11 | — | — | US | disclosed |
| US-20240186186-A1 | Dummy Fin with Reduced Height and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-06-06 | — | — | US | disclosed |
| US-12002865-B2 | Interconnect features with sharp corners and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-06-04 | — | — | US | disclosed |
| US-12002712-B2 | Phase control in contact formation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-06-04 | — | — | US | disclosed |
| US-11996317-B2 | Methods for forming isolation regions by depositing and oxidizing a silicon liner | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-05-28 | — | — | US | disclosed |
| CN-113793834-B | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2024-05-24 | — | — | CN | disclosed |
| US-20240170556-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-05-23 | — | — | US | disclosed |
| US-20240170563-A1 | Dielectric Layer for Nanosheet Protection and Method of Forming the Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-05-23 | — | — | US | disclosed |
| US-11990341-B2 | Cut metal gate processes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-05-21 | — | — | US | disclosed |
| US-20240162349-A1 | GATE RESISTANCE REDUCTION THROUGH LOW-RESISTIVITY CONDUCTIVE LAYER | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-05-16 | — | — | US | disclosed |
| US-20240162059-A1 | Semiconductor Devices and Methods of Manufacturing | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-05-16 | — | — | US | disclosed |
| CN-117976623-A | Limited source/drain epitaxial regions and methods of forming the same | 台湾积体电路制造股份有限公司 | 2024-05-03 | — | — | CN | disclosed |
| US-20240136227-A1 | Barrier-Free Approach for Forming Contact Plugs | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-04-25 | — | — | US | disclosed |
| US-11967622-B2 | Inter block for recessed contacts and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-04-23 | — | — | US | disclosed |
| US-11961732-B2 | Controlling threshold voltages through blocking layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-04-16 | — | — | US | disclosed |
| CN-117878059-A | Semiconductor structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2024-04-12 | — | — | CN | disclosed |
| US-20240120236-A1 | Isolation Regions For Isolating Transistors and the Methods Forming the Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-04-11 | — | — | US | disclosed |
| US-11955553-B2 | Source/drain structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-04-09 | — | — | US | disclosed |
| US-20240113202-A1 | Low-K Gate Spacer and Methods for Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-04-04 | — | — | US | disclosed |
| US-20240113205-A1 | SOURCE/DRAIN FORMATION WITH REDUCED SELECTIVE LOSS DEFECTS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-04-04 | — | — | US | disclosed |
| US-11948971-B2 | Confined source/drain epitaxy regions and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-04-02 | — | — | US | disclosed |
| US-11948841-B2 | Forming nitrogen-containing low-K gate spacer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-04-02 | — | — | US | disclosed |
| US-11948981-B2 | Seam-filling of metal gates with Si-containing layers | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-04-02 | — | — | US | disclosed |
| CN-117790422-A | Dielectric layer for nanoplatelet protection and method of forming the same | 台湾积体电路制造股份有限公司 | 2024-03-29 | — | — | CN | disclosed |
| US-11942376-B2 | Method for manufacturing semiconductor structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2024-03-26 | — | — | US | disclosed |
| US-20240096958-A1 | SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-03-21 | — | — | US | disclosed |
| US-20240096707-A1 | Footing Removal in Cut-Metal Process | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-03-21 | — | — | US | disclosed |
| US-20240088234-A1 | SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2024-03-14 | — | — | US | disclosed |
| US-11923437-B2 | Controlling fin-thinning through feedback | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-03-05 | — | — | US | disclosed |
| US-20240072155-A1 | CONTACT PLUGS AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-02-29 | — | — | US | disclosed |
| US-20240071767-A1 | Volume-less Fluorine Incorporation Method | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-02-29 | — | — | US | disclosed |
| US-11916146-B2 | Gate resistance reduction through low-resistivity conductive layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-02-27 | — | — | US | disclosed |
| US-11915946-B2 | Semiconductor devices and methods of manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-02-27 | — | — | US | disclosed |
| US-20240063065-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-02-22 | — | — | US | disclosed |
| US-20240063061-A1 | IN-SITU FORMATION OF METAL GATE MODULATORS | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-02-22 | — | — | US | disclosed |
| CN-117577585-A | Isolation region for isolating transistor and method for forming the same | 台湾积体电路制造股份有限公司 | 2024-02-20 | — | — | CN | disclosed |
| US-20240055526-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING A SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-02-15 | — | — | US | disclosed |
| US-11901229-B2 | Barrier-free approach for forming contact plugs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-02-13 | — | — | US | disclosed |
| US-11895819-B2 | Implantations for forming source/drain regions of different transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-02-06 | — | — | US | disclosed |
| US-11894274-B2 | Dummy fin with reduced height and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-02-06 | — | — | US | disclosed |
| US-11894237-B2 | Ultra narrow trench patterning with dry plasma etching | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-02-06 | — | — | US | disclosed |
| CN-117457581-A | Semiconductor device and method for forming the same | 台湾积体电路制造股份有限公司 | 2024-01-26 | — | — | CN | disclosed |
| US-20240021473-A1 | Metal Gates of Transistors Having Reduced Resistivity | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-01-18 | — | — | US | disclosed |
| US-20240021482-A1 | Formation of Hybrid Isolation Regions Through Recess and Re-Deposition | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-01-18 | — | — | US | disclosed |
| US-20240021706-A1 | REDUCING K VALUES OF DIELECTRIC FILMS THROUGH ANNEAL | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-01-18 | — | — | US | disclosed |
| US-20240021680-A1 | Seam-Filling of Metal Gates with Si-Containing Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2024-01-18 | — | — | US | disclosed |
| US-20240014280-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-01-11 | — | — | US | disclosed |
| US-20240014077-A1 | Gate Isolation Regions and Fin Isolation Regions and Method Forming the Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2024-01-11 | — | — | US | disclosed |
| CN-112242357-B | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2024-01-05 | — | — | CN | disclosed |
| US-11862708-B2 | Contact plugs and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-01-02 | — | — | US | disclosed |
| CN-117316768-A | Volume-free fluorine doping method | 台湾积体电路制造股份有限公司 | 2023-12-29 | — | — | CN | disclosed |
| CN-111092053-B | Method for forming integrated circuit structure and integrated circuit | 台湾积体电路制造股份有限公司 | 2023-12-29 | — | — | CN | disclosed |
| US-20230420525-A1 | METHOD FOR FORMING SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-28 | — | — | US | disclosed |
| US-11855182-B2 | Low-k gate spacer and methods for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-26 | — | — | US | disclosed |
| US-11855188-B2 | Source/drain formation with reduced selective loss defects | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-26 | — | — | US | disclosed |
| US-11855140-B2 | Gate oxide of nanostructure transistor with increased corner thickness | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-26 | — | — | US | disclosed |
| US-11855142-B2 | Supportive layer in source/drains of FinFET devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-26 | — | — | US | disclosed |
| US-11854903-B2 | Footing removal in cut-metal process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-26 | — | — | US | disclosed |
| US-20230411493-A1 | Isolation Regions with Non-Uniform Depths and Methods Forming the Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-21 | — | — | US | disclosed |
| US-20230411496-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-21 | — | — | US | disclosed |
| US-20230411457-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-21 | — | — | US | disclosed |
| US-20230402455-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-14 | — | — | US | disclosed |
| US-11842928-B2 | In-situ formation of metal gate modulators | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-12 | — | — | US | disclosed |
| CN-220172137-U | Semiconductor device structure | 台湾积体电路制造股份有限公司 | 2023-12-12 | — | — | CN | disclosed |
| CN-220155547-U | Semiconductor device structure | 台湾积体电路制造股份有限公司 | 2023-12-08 | — | — | CN | disclosed |
| CN-111200023-B | Integrated circuit device and method of forming integrated circuit structure | 台湾积体电路制造股份有限公司 | 2023-12-08 | — | — | CN | disclosed |
| US-20230395715-A1 | MULTI-CHANNEL REPLACEMENT METAL GATE DEVICE | GLOBALFOUNDRIES U.S. INC. | 2023-12-07 | — | — | US | disclosed |
| US-20230395379-A1 | SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-12-07 | — | — | US | disclosed |
| US-11837603-B2 | Extended side contacts for transistors and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-05 | — | — | US | disclosed |
| US-11837505-B2 | Formation of hybrid isolation regions through recess and re-deposition | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-05 | — | — | US | disclosed |
| CN-117174752-A | Multi-channel replacement metal gate device | 格芯(美国)集成电路科技有限公司 | 2023-12-05 | — | — | CN | disclosed |
| US-11837649-B2 | Method for selective removal of gate dielectric from dummy fin | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-12-05 | — | — | US | disclosed |
| CN-110137137-B | Integrated circuit semiconductor device including metal oxide semiconductor transistor | 三星电子株式会社 | 2023-12-05 | — | — | CN | disclosed |
| CN-108231588-B | Transistor and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-12-05 | — | — | CN | disclosed |
| US-20230387231-A1 | Interconnect Features With Sharp Corners and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230387263-A1 | Controlling Fin-Thinning Through Feedback | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230386917-A1 | Bottom-up Formation of Contact Plugs | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230386848-A1 | SURFACE OXIDATION CONTROL OF METAL GATES USING CAPPING LAYER | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-30 | — | — | US | disclosed |
| US-20230386826-A1 | Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-11-30 | — | — | US | disclosed |
| US-11830934-B2 | Increasing source/drain dopant concentration to reduced resistance | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-28 | — | — | US | disclosed |
| US-11830936-B2 | Gate formation with varying work function layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-28 | — | — | US | disclosed |
| US-11830736-B2 | Multi-layer photo etching mask including organic and inorganic materials | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-28 | — | — | US | disclosed |
| US-11830742-B2 | Selective capping processes and structures formed thereby | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-11-28 | — | — | US | disclosed |
| US-11830727-B2 | Forming low-stress silicon nitride layer through hydrogen treatment | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-28 | — | — | US | disclosed |
| US-20230378262-A1 | GATE OXIDE OF NANOSTRUCTURE TRANSISTOR WITH INCREASED CORNER THICKNESS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230377887-A1 | Multi-Layer Photo Etching Mask Including Organic and Inorganic Materials | TAIWAN SEMICONDUCTOR MFG (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230378328-A1 | INCREASING SOURCE/DRAIN DOPANT CONCENTRATION TO REDUCED RESISTANCE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230377944-A1 | Dielectric Gap Fill | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230378182-A1 | Extended Side Contacts for Transistors and Methods Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230378325-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-23 | — | — | US | disclosed |
| US-20230369386-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-16 | — | — | US | disclosed |
| US-20230369135-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-16 | — | — | US | disclosed |
| US-11817343-B2 | Dielectric gap fill | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-14 | — | — | US | disclosed |
| CN-117059574-A | Gate isolation region and fin isolation region and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-11-14 | — | — | CN | disclosed |
| US-20230361197-A1 | Dummy Gate Cutting Process and Resulting Gate Structures | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-11-09 | — | — | US | disclosed |
| US-20230360918-A1 | Dipole-Engineered High-K Gate Dielectric and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-11-09 | — | — | US | disclosed |
| US-11810819-B2 | Metal gates of transistors having reduced resistivity | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-11-07 | — | — | US | disclosed |
| US-20230343853-A1 | Partial Directional Etch Method and Resulting Structures | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-10-26 | — | — | US | disclosed |
| US-20230343649-A1 | Air Spacers in Transistors and Methods Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-10-26 | — | — | US | disclosed |
| US-20230335615-A1 | SEMICONDUCTOR MANUFACTURING | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-10-19 | — | — | US | disclosed |
| US-20230335601-A1 | Selective Etching to Increase Threshold Voltage Spread | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-10-19 | — | — | US | disclosed |
| US-20230326990-A1 | Multi-Channel Devices and Methods of Manufacture | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-10-12 | — | — | US | disclosed |
| US-11784052-B2 | Dipole-engineered high-k gate dielectric and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-10-10 | — | — | US | disclosed |
| US-20230317519-A1 | Metal Loss Prevention Using Implantation | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-10-05 | — | — | US | disclosed |
| CN-116825636-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-09-29 | — | — | CN | disclosed |
| US-20230299159-A1 | Semiconductor Devices and Methods | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-09-21 | — | — | US | disclosed |
| US-11757019-B2 | Dummy gate cutting process and resulting gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD (TW) | 2023-09-12 | — | — | US | disclosed |
| US-20230282484-A1 | Tuning Threshold Voltage Through Meta Stable Plasma Treatment | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-09-07 | — | — | US | disclosed |
| US-20230282729-A1 | Work-Function Metal in Transistors and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-09-07 | — | — | US | disclosed |
| US-20230274972-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-08-31 | — | — | US | disclosed |
| CN-110729191-B | Reducing pattern loading in back etching of metal gates | 台湾积体电路制造股份有限公司 | 2023-08-29 | — | — | CN | disclosed |
| US-11742395-B2 | Selective etching to increase threshold voltage spread | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-08-29 | — | — | US | disclosed |
| US-11742248-B2 | Semiconductor device and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-08-29 | — | — | US | disclosed |
| US-20230268228-A1 | Contact Conductive Feature Formation and Structure | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-08-24 | — | — | US | disclosed |
| US-11735668-B2 | Interfacial layer between fin and source/drain region | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-08-22 | — | — | US | disclosed |
| US-20230261055-A1 | Semiconductor Device with Implant and Method of Manufacturing Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-08-17 | — | — | US | disclosed |
| US-20230261080-A1 | Multi-Layer Inner Spacers and Methods Forming the Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-08-17 | — | — | US | disclosed |
| US-11728221-B2 | Air spacers in transistors and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-08-15 | — | — | US | disclosed |
| US-11728407-B2 | Partial directional etch method and resulting structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-08-15 | — | — | US | disclosed |
| US-20230253243-A1 | Reducing Spacing Between Conductive Features Through Implantation | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-08-10 | — | — | US | disclosed |
| US-20230253256-A1 | Multiple Threshold Voltage Implementation Through Lanthanum Incorporation | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-08-10 | — | — | US | disclosed |
| US-20230246089-A1 | Reducing Pattern Loading in the Etch-Back of Metal Gate | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-08-03 | — | — | US | disclosed |
| US-11715779-B2 | Multi-channel devices and methods of manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-08-01 | — | — | US | disclosed |
| US-11715738-B2 | Semiconductor device and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-08-01 | — | — | US | disclosed |
| US-20230238241-A1 | Method Forming Gate Stacks Adopting Thin Silicon Cap | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-07-27 | — | — | US | disclosed |
| US-20230238275-A1 | AIR GAP FORMATION METHOD | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-07-27 | — | — | US | disclosed |
| US-11710659-B2 | Metal loss prevention using implantation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-07-25 | — | — | US | disclosed |
| CN-116469835-A | Work function metal in transistor and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-07-21 | — | — | CN | disclosed |
| US-20230230876-A1 | METHOD OF FORMING A CAP LAYER FOR SEALING AN AIR GAP, AND SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-07-20 | — | — | US | disclosed |
| US-20230223304-A1 | Thin Dummy Sidewall Spacers for Transistors With Reduced Pitches | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-07-13 | — | — | US | disclosed |
| US-11699729-B2 | Semiconductor devices and methods | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-07-11 | — | — | US | disclosed |
| US-20230215738-A1 | Method of Gap Filling Using Conformal Deposition-Annealing-Etching Cycle for Reducing Seam Void and Bending | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-07-06 | — | — | US | disclosed |
| US-20230215758-A1 | Trench Filling Through Reflowing Filling Material | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-07-06 | — | — | US | disclosed |
| CN-110729189-B | Semiconductor device and method for manufacturing the same | 中芯国际集成电路制造（天津）有限公司 | 2023-06-30 | — | — | CN | disclosed |
| US-20230207670-A1 | Dummy Fin Profile Control to Enlarge Gate Process Window | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-06-29 | — | — | US | disclosed |
| US-11688625-B2 | Method for manufacturing semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-06-27 | — | — | US | disclosed |
| CN-110957274-B | Method for manufacturing semiconductor structure | 台湾积体电路制造股份有限公司 | 2023-06-27 | — | — | CN | disclosed |
| US-11688606-B2 | Tuning threshold voltage through meta stable plasma treatment | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-06-27 | — | — | US | disclosed |
| US-20230197852-A1 | Source/Drain Structure | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-06-22 | — | — | US | disclosed |
| CN-110429136-B | Semiconductor device and method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2023-06-20 | — | — | CN | disclosed |
| US-20230187288-A1 | Gate Formation Of Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD (TW) | 2023-06-15 | — | — | US | disclosed |
| US-20230187265-A1 | Stress Modulation Using STI Capping Layer for Reducing Fin Bending | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-06-15 | — | — | US | disclosed |
| US-20230187524-A1 | Nano-Structure Transistors with Air Inner Spacers and Methods Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-06-15 | — | — | US | disclosed |
| US-11676859-B2 | Contact conductive feature formation and structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-06-13 | — | — | US | disclosed |
| US-11676867-B2 | Method for manufacturing semiconductor structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2023-06-13 | — | — | US | disclosed |
| US-11670683-B2 | Semiconductor device with implant and method of manufacturing same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-06-06 | — | — | US | disclosed |
| US-11664279-B2 | Multiple threshold voltage implementation through lanthanum incorporation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-05-30 | — | — | US | disclosed |
| CN-110660857-B | Method of semiconductor process and semiconductor device | 台湾积体电路制造股份有限公司 | 2023-05-26 | — | — | CN | disclosed |
| US-20230163194-A1 | Dummy Hybrid Film for Self-Alignment Contact Formation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-05-25 | — | — | US | disclosed |
| US-11658245-B2 | Semiconductor device and method of manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-05-23 | — | — | US | disclosed |
| CN-110957356-B | Semiconductor device manufacturing method and semiconductor device | 台湾积体电路制造股份有限公司 | 2023-05-23 | — | — | CN | disclosed |
| CN-116153786-A | Method for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2023-05-23 | — | — | CN | disclosed |
| US-20230154992-A1 | Isolation Layers for Reducing Leakages Between Contacts | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-05-18 | — | — | US | disclosed |
| US-20230155001-A1 | Dual Damascene Structure in Forming Source/Drain Contacts | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-05-18 | — | — | US | disclosed |
| CN-116110854-A | Method for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2023-05-12 | — | — | CN | disclosed |
| US-20230147848-A1 | Reducing Fin Wriggling in Fin-Thinning Process | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-05-11 | — | — | US | disclosed |
| US-20230135155-A1 | Atomic Layer Etching to Reduce Pattern Loading in High-K Dielectric Layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-05-04 | — | — | US | disclosed |
| CN-111681959-B | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2023-04-28 | — | — | CN | disclosed |
| US-20230126442-A1 | Non-Conformal Gate Oxide Formation on FinFET | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-04-27 | — | — | US | disclosed |
| CN-111696859-B | Ultra narrow channel patterning using plasma etching | 台湾积体电路制造股份有限公司 | 2023-04-25 | — | — | CN | disclosed |
| CN-116013856-A | Stress modulation using STI capping layer to reduce fin bending | 台湾积体电路制造股份有限公司 | 2023-04-25 | — | — | CN | disclosed |
| CN-115995481-A | Nanostructured transistor with air internal spacers and method of forming the same | 台湾积体电路制造股份有限公司 | 2023-04-21 | — | — | CN | disclosed |
| US-20230119732-A1 | Slot Contacts and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-04-20 | — | — | US | disclosed |
| US-20230123827-A1 | Low-Resistance Contact Plugs and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-04-20 | — | — | US | disclosed |
| US-20230122022-A1 | Method of Tuning Threshold Voltages of Transistors | TAIWAN SEMICONDUCTOR MANUFACTORING CO LTD (TW) | 2023-04-20 | — | — | US | disclosed |
| US-20230118638-A1 | Epitaxy Regions With Reduced Loss Control | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-04-20 | — | — | US | disclosed |
| US-20230116357-A1 | Silicon Intermixing Layer for Blocking Diffusion | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-04-13 | — | — | US | disclosed |
| US-20230114191-A1 | Forming Seams with Desirable Dimensions in Isolation Regions | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-04-13 | — | — | US | disclosed |
| US-20230113266-A1 | Hybrid Scheme for Improved Performance for P-type and N-type FinFETs | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-04-13 | — | — | US | disclosed |
| US-11626506-B2 | Reducing pattern loading in the etch-back of metal gate | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-04-11 | — | — | US | disclosed |
| CN-115938947-A | Method for fabricating semiconductor structure | 台湾积体电路制造股份有限公司 | 2023-04-07 | — | — | CN | disclosed |
| CN-115939044-A | Method for forming seam in isolation region | 台湾积体电路制造股份有限公司 | 2023-04-07 | — | — | CN | disclosed |
| US-20230103306-A1 | Implantations for Forming Source/Drain Regions of Different Transistors | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-04-06 | — | — | US | disclosed |
| US-20230106719-A1 | DISSOLVING AGENT | KAWASAKI INSTITUTE OF INDUSTRIAL PROMOTION (JP) | 2023-04-06 | — | — | US | disclosed |
| CN-115881794-A | Method of forming semiconductor device | 台湾积体电路制造股份有限公司 | 2023-03-31 | — | — | CN | disclosed |
| CN-115863383-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2023-03-28 | — | — | CN | disclosed |
| US-11615982-B2 | Reducing spacing between conductive features through implantation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-03-28 | — | — | US | disclosed |
| CN-111092052-B | Integrated circuit device and method of forming integrated circuit structure | 台湾积体电路制造股份有限公司 | 2023-03-28 | — | — | CN | disclosed |
| CN-115831747-A | Integrated circuit structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-03-21 | — | — | CN | disclosed |
| US-11605543-B2 | Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY. LTD. (TW) | 2023-03-14 | — | — | US | disclosed |
| US-11605555-B2 | Trench filling through reflowing filling material | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-03-14 | — | — | US | disclosed |
| CN-110783268-B | Method for forming semiconductor and semiconductor device | 台湾积体电路制造股份有限公司 | 2023-03-10 | — | — | CN | disclosed |
| CN-115763373-A | Transistor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-03-07 | — | — | CN | disclosed |
| CN-115763374-A | Transistor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2023-03-07 | — | — | CN | disclosed |
| US-11600717-B2 | Dummy FIN profile control to enlarge gate process window | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD (TW) | 2023-03-07 | — | — | US | disclosed |
| US-20230068951-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-03-02 | — | — | US | disclosed |
| US-20230069302-A1 | Shared Contact Structure and Methods for Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-03-02 | — | — | US | disclosed |
| US-11594636-B2 | Source/drain structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-02-28 | — | — | US | disclosed |
| US-11587791-B2 | Silicon intermixing layer for blocking diffusion | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-02-21 | — | — | US | disclosed |
| US-11574846-B2 | Gate formation of semiconductor devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-02-07 | — | — | US | disclosed |
| US-20230034803-A1 | Contact Formation with Reduced Dopant Loss and Increased Dimensions | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-02-02 | — | — | US | disclosed |
| US-20230020099-A1 | NFET with Aluminum-Free Work-Function Layer and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-19 | — | — | US | disclosed |
| US-20230014471-A1 | Seam-Filling of Metal Gates With Si-Containing Layers | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-19 | — | — | US | disclosed |
| US-20230013102-A1 | SEMICONDUCTOR DEVICE STRUCTURE AND METHODS OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-01-19 | — | — | US | disclosed |
| US-20230009031-A1 | End Point Control in Etching Processes | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-12 | — | — | US | disclosed |
| US-20230008165-A1 | METHOD FOR SEALING A SEAM, SEMICONDUCTOR STRUCTURE, AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2023-01-12 | — | — | US | disclosed |
| US-20230011474-A1 | Fin Bending Reduction Through Structure Design | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-12 | — | — | US | disclosed |
| US-20230009485-A1 | Gate Structure in Semiconductor Device and Method of Forming the Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2023-01-12 | — | — | US | disclosed |
| US-11538805-B2 | Method of tuning threshold voltages of transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-12-27 | — | — | US | disclosed |
| US-20220406655-A1 | Semiconductor Devices and Methods of Manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-12-22 | — | — | US | disclosed |
| US-11532504-B2 | Low-resistance contact plugs and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-12-20 | — | — | US | disclosed |
| US-11532723-B2 | Fin-end gate structures and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-12-20 | — | — | US | disclosed |
| US-11532503-B2 | Conductive feature structure including a blocking region | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-12-20 | — | — | US | disclosed |
| US-11532518-B2 | Slot contacts and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-12-20 | — | — | US | disclosed |
| US-11532475-B2 | Deposition process for forming semiconductor device and system | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-12-20 | — | — | US | disclosed |
| US-11532509-B2 | Selective hybrid capping layer for metal gates of transistors | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-12-20 | — | — | US | disclosed |
| US-11527540-B2 | Implantations for forming source/drain regions of different transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-12-13 | — | — | US | disclosed |
| CN-115472571-A | Semiconductor structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2022-12-13 | — | — | CN | disclosed |
| CN-110660853-B | Method for forming gate spacer and semiconductor device | 台湾积体电路制造股份有限公司 | 2022-12-06 | — | — | CN | disclosed |
| CN-110648918-B | Semiconductor structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2022-12-02 | — | — | CN | disclosed |
| US-20220384275-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-12-01 | — | — | US | disclosed |
| US-20220384179-A1 | Deposition Process for Forming Semiconductor Device and System | TAIWAN SEMICONDOCTOR MFG CO LTD (TW) | 2022-12-01 | — | — | US | disclosed |
| US-20220384572-A1 | Semiconductor Devices and Methods of Manufacturing | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-12-01 | — | — | US | disclosed |
| US-20220384619-A1 | Semiconductor Devices and Methods of Manufacture | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-12-01 | — | — | US | disclosed |
| US-20220384616-A1 | Cut Metal Gate Processes | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-12-01 | — | — | US | disclosed |
| US-20220384649-A1 | Stress Modulation for Dielectric Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-12-01 | — | — | US | disclosed |
| CN-217933788-U | Integrated circuit structure | 台湾积体电路制造股份有限公司 | 2022-11-29 | — | — | CN | disclosed |
| CN-110610859-B | Method for forming fin field effect transistor and semiconductor device | 台湾积体电路制造股份有限公司 | 2022-11-29 | — | — | CN | disclosed |
| US-20220376049-A1 | Interfacial Layer Between Fin and Source/Drain Region | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-24 | — | — | US | disclosed |
| CN-115376902-A | Seam filling of metal gates with Si-containing layers | 台湾积体电路制造股份有限公司 | 2022-11-22 | — | — | CN | disclosed |
| CN-115376999-A | NFET with aluminum-free workfunction layer and method of forming the same | 台湾积体电路制造股份有限公司 | 2022-11-22 | — | — | CN | disclosed |
| US-11508826-B2 | Composite work function layer formation using same work function material | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-11-22 | — | — | US | disclosed |
| US-11508582-B2 | Cut metal gate processes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-11-22 | — | — | US | disclosed |
| CN-115360143-A | Gate structure in semiconductor device and forming method thereof | 台湾积体电路制造股份有限公司 | 2022-11-18 | — | — | CN | disclosed |
| US-20220367261-A1 | Selective Hybrid Capping Layer for Metal Gates of Transistors | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-17 | — | — | US | disclosed |
| US-20220367525-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-11-17 | — | — | US | disclosed |
| US-20220367663-A1 | INTERCONNECT STRUCTURE HAVING A MULTI-DECK CONDUCTIVE FEATURE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-11-17 | — | — | US | disclosed |
| US-20220367286-A1 | Formation of Hybrid Isolation Regions Through Recess and Re-Deposition | TAIWAN SEMICONDUCTOR MFG LTD (TW) | 2022-11-17 | — | — | US | disclosed |
| US-20220367368-A1 | SEMICONDUCTOR STRUCTURE HAVING RAISED VIA CONTACTS AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-11-17 | — | — | US | disclosed |
| US-20220367667-A1 | Contact with a Silicide Region | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-17 | — | — | US | disclosed |
| US-20220367630-A1 | SUPPORTIVE LAYER IN SOURCE/DRAINS OF FINFET DEVICES | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-17 | — | — | US | disclosed |
| US-11502000-B2 | Bottom lateral expansion of contact plugs through implantation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-11-15 | — | — | US | disclosed |
| US-11502196-B2 | Stress modulation for dielectric layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-11-15 | — | — | US | disclosed |
| US-20220359285-A1 | Bottom-up Formation of Contact Plugs | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359299-A1 | Forming Isolation Regions for Separating Fins and Gate Stacks | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359287-A1 | RECESSED CONTACTS AT LINE END AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359721-A1 | Selective Removal of Gate Dielectric from Dummy Fin | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359709-A1 | Processes for Removing Spikes from Gates | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359766-A1 | Semiconductor Device and Method of Manufacturing | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359286-A1 | Bottom Lateral Expansion of Contact Plugs Through Implantation | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359193-A1 | Controlling Threshold Voltages Through Blocking Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359684-A1 | INTER BLOCK FOR RECESSED CONTACTS AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359703-A1 | Composite Work Function Layer Formation Using Same Work Function Material | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359722-A1 | Fin-End Gate Structures and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-10 | — | — | US | disclosed |
| US-20220359720-A1 | Non-Conformal Capping Layer and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-10 | — | — | US | disclosed |
| US-11495598-B2 | Hybrid scheme for improved performance for P-type and N-type FinFETs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-11-08 | — | — | US | disclosed |
| CN-115295492-A | Air spacer in transistor and method of forming the same | 台湾积体电路制造股份有限公司 | 2022-11-04 | — | — | CN | disclosed |
| US-20220352330-A1 | Methods for Forming Recesses in Source/Drain Regions and Devices Formed Thereof | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-03 | — | — | US | disclosed |
| US-20220352020-A1 | Phase Control in Contact Formation | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-11-03 | — | — | US | disclosed |
| CN-115274447-A | Method and apparatus for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2022-11-01 | — | — | CN | disclosed |
| CN-111211089-B | Integrated circuit structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2022-10-28 | — | — | CN | disclosed |
| CN-110416081-B | Selective recessing of source/drain regions of NFET/PFET | 台湾积体电路制造股份有限公司 | 2022-10-28 | — | — | CN | disclosed |
| CN-110556417-B | Method of forming recesses in source/drain regions and devices formed thereby | 台湾积体电路制造股份有限公司 | 2022-10-28 | — | — | CN | disclosed |
| US-11482620-B2 | Interfacial layer between Fin and source/drain region | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-25 | — | — | US | disclosed |
| CN-115223936-A | Semiconductor structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2022-10-21 | — | — | CN | disclosed |
| US-20220336264-A1 | Silicon Oxide Layer for Oxidation Resistance and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-10-20 | — | — | US | disclosed |
| US-20220336640-A1 | Undoped Region Under Source/Drain And Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-10-20 | — | — | US | disclosed |
| US-20220336285-A1 | In-Situ Formation of Metal Gate Modulators | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-10-20 | — | — | US | disclosed |
| US-20220336202-A1 | Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-10-20 | — | — | US | disclosed |
| US-11476159-B2 | Shared contact structure and methods for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-18 | — | — | US | disclosed |
| CN-115206787-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2022-10-18 | — | — | CN | disclosed |
| US-11476331-B2 | Supportive layer in source/drains of FinFET devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-10-18 | — | — | US | disclosed |
| US-11476347-B2 | Processes for removing spikes from gates | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-10-18 | — | — | US | disclosed |
| US-20220328656-A1 | Partial Directional Etch Method and Resulting Structures | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-10-13 | — | — | US | disclosed |
| US-20220328638-A1 | SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-10-13 | — | — | US | disclosed |
| US-20220328309-A1 | Selective Capping Processes and Structures Formed Thereby | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-10-13 | — | — | US | disclosed |
| US-20220328357-A1 | Dummy Fin with Reduced Height and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-10-13 | — | — | US | disclosed |
| US-20220328660-A1 | Source/Drain Formation with Reduced Selective Loss Defects | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-10-13 | — | — | US | disclosed |
| US-11469139-B2 | Bottom-up formation of contact plugs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-11 | — | — | US | disclosed |
| CN-115172273-A | Method of forming semiconductor device | 台湾积体电路制造股份有限公司 | 2022-10-11 | — | — | CN | disclosed |
| US-20220320279-A1 | SHALLOW TRENCH ISOLATION (STI) CONTACT STRUCTURES AND METHODS OF FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-10-06 | — | — | US | disclosed |
| US-20220320313-A1 | Semiconductor Manufacturing | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-10-06 | — | — | US | disclosed |
| US-20220320338-A1 | Contact Interface Engineering for Reducing Contact Resistance | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-10-06 | — | — | US | disclosed |
| CN-111106000-B | Method of forming semiconductor device | 台湾积体电路制造股份有限公司 | 2022-10-04 | — | — | CN | disclosed |
| US-11462614-B2 | Semiconductor devices and methods of manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-04 | — | — | US | disclosed |
| US-20220310398-A1 | Contact Resistance Reduction for Transistors | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-09-29 | — | — | US | disclosed |
| US-20220310815-A1 | Interconnect Features With Sharp Corners and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-09-29 | — | — | US | disclosed |
| US-20220310820-A1 | Air Spacers Around Contact Plugs and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-09-29 | — | — | US | disclosed |
| US-20220310814-A1 | Conductive Capping For Work Function Layer and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-09-29 | — | — | US | disclosed |
| US-20220310451-A1 | Adjusting Work Function Through Adjusting Deposition Temperature | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-09-29 | — | — | US | disclosed |
| CN-115116950-A | Semiconductor structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2022-09-27 | — | — | CN | disclosed |
| US-20220301897-A1 | Semiconductor Devices and Methods of Manufacturing | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-09-22 | — | — | US | disclosed |
| US-20220301868-A1 | Forming Nitrogen-Containing Layers as Oxidation Blocking Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-09-22 | — | — | US | disclosed |
| US-11450754-B2 | Semiconductor devices and methods of manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-09-20 | — | — | US | disclosed |
| US-11450571-B2 | Method for manufacturing semiconductor structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2022-09-20 | — | — | US | disclosed |
| US-20220293613-A1 | Conductive Feature Formation | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-09-15 | — | — | US | disclosed |
| US-11444181-B2 | Source/drain formation with reduced selective loss defects | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-09-13 | — | — | US | disclosed |
| US-20220285529-A1 | Dielectric Spacer to Prevent Contacting Shorting | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-09-08 | — | — | US | disclosed |
| US-20220285165-A1 | Ultra Narrow Trench Patterning with Dry Plasma Etching | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-09-08 | — | — | US | disclosed |
| US-20220285161-A1 | Methods for Doping High-K Metal Gates for Tuning Threshold Voltages | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-09-08 | — | — | US | disclosed |
| US-11437277-B2 | Forming isolation regions for separating fins and gate stacks | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-09-06 | — | — | US | disclosed |
| US-11437491-B2 | Non-conformal capping layer and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-09-06 | — | — | US | disclosed |
| US-20220277997-A1 | Barrier-Free Approach for Forming Contact Plugs | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-09-01 | — | — | US | disclosed |
| US-20220278224-A1 | Etching Back and Selective Deposition of Metal Gate | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-09-01 | — | — | US | disclosed |
| US-11430652-B2 | Controlling threshold voltages through blocking layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-08-30 | — | — | US | disclosed |
| US-11430694-B2 | Metal gates of transistors having reduced resistivity | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-08-30 | — | — | US | disclosed |
| CN-114975249-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2022-08-30 | — | — | CN | disclosed |
| CN-114975089-A | Method of forming semiconductor device | 台湾积体电路制造股份有限公司 | 2022-08-30 | — | — | CN | disclosed |
| US-11430698-B2 | In-situ formation of metal gate modulators | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-08-30 | — | — | US | disclosed |
| US-11424188-B2 | Methods of fabricating integrated circuit devices having raised via contacts | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-08-23 | — | — | US | disclosed |
| US-20220262627-A1 | Multi-Layer Photo Etching Mask Including Organic and Inorganic Materials | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-08-18 | — | — | US | disclosed |
| US-11417684-B2 | Semiconductor device and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-08-16 | — | — | US | disclosed |
| US-11417740-B2 | Methods for forming recesses in source/drain regions and devices formed thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-08-16 | — | — | US | disclosed |
| US-11411094-B2 | Contact with a silicide region | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-08-09 | — | — | US | disclosed |
| US-11410886-B2 | Dummy fin with reduced height and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-08-09 | — | — | US | disclosed |
| US-11410880-B2 | Phase control in contact formation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-08-09 | — | — | US | disclosed |
| CN-111106059-B | Integrated circuit structure and method of forming an integrated circuit structure | 台湾积体电路制造股份有限公司 | 2022-08-05 | — | — | CN | disclosed |
| US-20220246478-A1 | Forming Nitrogen-Containing Low-K Gate Spacer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-08-04 | — | — | US | disclosed |
| US-11404323-B2 | Formation of hybrid isolation regions through recess and re-deposition | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-08-02 | — | — | US | disclosed |
| CN-114823517-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2022-07-29 | — | — | CN | disclosed |
| US-20220238387-A1 | Gate Profile Control Through Sidewall Protection During Etching | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-07-28 | — | — | US | disclosed |
| US-20220238697-A1 | Reducing K Values of Dielectric Films Through Anneal | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-07-28 | — | — | US | disclosed |
| US-20220238522-A1 | Extended Side Contacts for Transistors and Methods Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-07-28 | — | — | US | disclosed |
| US-20220238715-A1 | Gate Resistance Reduction Through Low-Resistivity Conductive Layer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-07-28 | — | — | US | disclosed |
| CN-110416157-B | Air spacer in transistor and method of forming the same | 台湾积体电路制造股份有限公司 | 2022-07-22 | — | — | CN | disclosed |
| US-20220231139-A1 | Semiconductor Devices and Methods | TAIWAN SEMICONDUCTOR MANUFACTURINF CO LTD (TW) | 2022-07-21 | — | — | US | disclosed |
| US-20220230908-A1 | Depositing and Oxidizing Silicon Liner for Forming Isolation Regions | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-07-21 | — | — | US | disclosed |
| US-20220230911-A1 | Reducing Spacing Between Conductive Features Through Implantation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-07-21 | — | — | US | disclosed |
| US-11393711-B2 | Silicon oxide layer for oxidation resistance and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-07-19 | — | — | US | disclosed |
| US-11393674-B2 | Forming low-stress silicon nitride layer through hydrogen treatment | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-07-19 | — | — | US | disclosed |
| US-11393910-B2 | Semiconductor device and formation method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-07-19 | — | — | US | disclosed |
| US-20220223591-A1 | Transistors with Recessed Silicon Cap and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-07-14 | — | — | US | disclosed |
| US-20220223422-A1 | Surface Oxidation Control of Metal Gates Using Capping Layer | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-07-14 | — | — | US | disclosed |
| US-20220216307-A1 | Selective Etching to Increase Threshold Voltage Spread | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-07-07 | — | — | US | disclosed |
| US-11380774-B2 | Etching back and selective deposition of metal gate | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-07-05 | — | — | US | disclosed |
| US-11380542-B2 | Selective capping processes and structures formed thereby | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-07-05 | — | — | US | disclosed |
| CN-110875250-B | Semiconductor process method and semiconductor structure | 台湾积体电路制造股份有限公司 | 2022-07-01 | — | — | CN | disclosed |
| US-20220208984-A1 | Capping Layers in Metal Gates of Transistors | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-06-30 | — | — | US | disclosed |
| US-11374110-B2 | Partial directional etch method and resulting structures | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-06-28 | — | — | US | disclosed |
| US-11374089-B2 | Shallow trench isolation (STI) contact structures and methods of forming same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-06-28 | — | — | US | disclosed |
| US-11367782-B2 | Semiconductor manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-06-21 | — | — | US | disclosed |
| US-11362212-B2 | Contact interface engineering for reducing contact resistance | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (CN) | 2022-06-14 | — | — | US | disclosed |
| US-11362002-B2 | Adjusting work function through adjusting deposition temperature | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-06-14 | — | — | US | disclosed |
| US-20220181214-A1 | Multi-Channel Devices and Methods of Manufacture | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-06-09 | — | — | US | disclosed |
| US-20220181463-A1 | Transistors with Reduced Defect and Methods of Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-06-09 | — | — | US | disclosed |
| CN-114597171-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2022-06-07 | — | — | CN | disclosed |
| US-11355616-B2 | Air spacers around contact plugs and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-06-07 | — | — | US | disclosed |
| US-11355339-B2 | Forming nitrogen-containing layers as oxidation blocking layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-06-07 | — | — | US | disclosed |
| US-11355363-B2 | Semiconductor devices and methods of manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-06-07 | — | — | US | disclosed |
| US-11355603-B2 | Methods and structures of novel contact feature | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-06-07 | — | — | US | disclosed |
| US-20220173225-A1 | Dummy Gate Cutting Process and Resulting Gate Structures | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-06-02 | — | — | US | disclosed |
| US-20220173239-A1 | Source/Drain Structure | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-06-02 | — | — | US | disclosed |
| US-20220172958-A1 | Method of Gap Filling Using Conformal Deposition-Annealing-Etching Cycle for Reducing Seam Void and Bending | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-06-02 | — | — | US | disclosed |
| CN-109427898-B | Method of forming semiconductor device | 台湾积体电路制造股份有限公司 | 2022-05-31 | — | — | CN | disclosed |
| US-11348927-B2 | Conductive feature formation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-05-31 | — | — | US | disclosed |
| US-11348800-B2 | Ultra narrow trench patterning with dry plasma etching | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-05-31 | — | — | US | disclosed |
| US-11342444-B2 | Dielectric spacer to prevent contacting shorting | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-05-24 | — | — | US | disclosed |
| US-11342225-B2 | Barrier-free approach for forming contact plugs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-05-24 | — | — | US | disclosed |
| US-11342188-B2 | Methods for doping high-k metal gates for tuning threshold voltages | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-05-24 | — | — | US | disclosed |
| CN-114520188-A | Reducing spacing between conductive features by implantation | 台湾积体电路制造股份有限公司 | 2022-05-20 | — | — | CN | disclosed |
| CN-114520189-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2022-05-20 | — | — | CN | disclosed |
| CN-114520149-A | Deposition and silicon oxide liner for forming isolation regions | 台湾积体电路制造股份有限公司 | 2022-05-20 | — | — | CN | disclosed |
| US-20220157973-A1 | Gate Formation with Varying Work Function Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-05-19 | — | — | US | disclosed |
| CN-109427892-B | Hybrid scheme for improving p-type and N-type FinFET performance | 台湾积体电路制造股份有限公司 | 2022-05-17 | — | — | CN | disclosed |
| CN-114496918-A | Integrated circuit structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2022-05-13 | — | — | CN | disclosed |
| CN-110600421-B | Dielectric gap filling | 台湾积体电路制造股份有限公司 | 2022-05-10 | — | — | CN | disclosed |
| US-20220139712-A1 | Tuning Threshold Voltage Through Meta Stable Plasma Treatment | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-05-05 | — | — | US | disclosed |
| US-11322412-B2 | Forming nitrogen-containing low-K gate spacer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-05-03 | — | — | US | disclosed |
| US-20220122884-A1 | Metal Loss Prevention Using Implantation | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-04-21 | — | — | US | disclosed |
| CN-110660735-B | Stress modulation for dielectric layers | 台湾积体电路制造股份有限公司 | 2022-04-19 | — | — | CN | disclosed |
| US-11302581-B2 | Gate profile control through sidewall protection during etching | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-04-12 | — | — | US | disclosed |
| US-11302818-B2 | Gate resistance reduction through low-resistivity conductive layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-04-12 | — | — | US | disclosed |
| CN-110634799-B | Method for forming semiconductor device and semiconductor device | 台湾积体电路制造股份有限公司 | 2022-04-08 | — | — | CN | disclosed |
| US-11296199-B2 | Semiconductor devices and methods | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-04-05 | — | — | US | disclosed |
| CN-110783267-B | Cut fin isolation region and method of forming the same | 台湾积体电路制造股份有限公司 | 2022-04-05 | — | — | CN | disclosed |
| US-11296077-B2 | Transistors with recessed silicon cap and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-04-05 | — | — | US | disclosed |
| US-20220102494-A1 | Gate Oxide of Nanostructure Transistor with Increased Corner Thickness | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-03-31 | — | — | US | disclosed |
| US-11289343-B2 | Method of gap filling using conformal deposition-annealing-etching cycle for reducing seam void and bending | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-03-29 | — | — | US | disclosed |
| US-11289578-B2 | Selective etching to increase threshold voltage spread | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-03-29 | — | — | US | disclosed |
| US-11282749-B2 | Forming nitrogen-containing low-k gate spacer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-03-22 | — | — | US | disclosed |
| US-11282938-B2 | Capping layers in metal gates of transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-03-22 | — | — | US | disclosed |
| US-11264283-B2 | Multi-channel devices and methods of manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-03-01 | — | — | US | disclosed |
| US-11264478-B2 | Transistors with reduced defect and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-03-01 | — | — | US | disclosed |
| CN-110544691-B | Semiconductor structure and method for semiconductor processing | 台湾积体电路制造股份有限公司 | 2022-02-25 | — | — | CN | disclosed |
| US-20220059405-A1 | Bottom Lateral Expansion of Contact Plugs Through Implantation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-02-24 | — | — | US | disclosed |
| US-20220059685-A1 | Cut-Fin Isolation Regions and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-02-24 | — | — | US | disclosed |
| US-11257906-B2 | High surface dopant concentration formation processes and structures formed thereby | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-02-22 | — | — | US | disclosed |
| US-11257952-B2 | Source/drain structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-02-22 | — | — | US | disclosed |
| CN-114078959-A | Gate oxide with increased corner thickness for nanostructured transistors | 台湾积体电路制造股份有限公司 | 2022-02-22 | — | — | CN | disclosed |
| US-11251284-B2 | Dummy gate cutting process and resulting gate structures | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-02-15 | — | — | US | disclosed |
| US-20220045199-A1 | Controlling Fin-Thinning Through Feedback | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2022-02-10 | — | — | US | disclosed |
| US-11239345-B2 | Gate formation with varying work function layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-02-01 | — | — | US | disclosed |
| US-11239083-B2 | Tuning threshold voltage through meta stable plasma treatment | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-02-01 | — | — | US | disclosed |
| US-20220029001-A1 | Source/Drain Formation with Reduced Selective Loss Defects | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-01-27 | — | — | US | disclosed |
| EP-3944299-A1 | SOURCE/DRAIN FORMATION WITH REDUCED SELECTIVE LOSS DEFECTS | Taiwan Semiconductor Manufacturing Co., Ltd. (TW) | 2022-01-26 | — | — | EP | disclosed |
| US-20220020861-A1 | Composite Work Function Layer Formation Using Same Work Function Material | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2022-01-20 | — | — | US | disclosed |
| EP-3940748-A1 | COMPOSITE WORK FUNCTION LAYER FORMATION USING SAME WORK FUNCTION MATERIAL | Taiwan Semiconductor Manufacturing Co., Ltd. (TW) | 2022-01-19 | — | — | EP | disclosed |
| CN-110970395-B | Conductive feature formation | 台湾积体电路制造股份有限公司 | 2022-01-07 | — | — | CN | disclosed |
| US-20210407995-A1 | Method of Tuning Threshold Voltages of Transistors | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-30 | — | — | US | disclosed |
| US-11211289-B2 | Metal loss prevention using implantation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-12-28 | — | — | US | disclosed |
| CN-109585293-B | Footing removal in metal cutting processes | 台湾积体电路制造股份有限公司 | 2021-12-24 | — | — | CN | disclosed |
| CN-109427591-B | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-12-24 | — | — | CN | disclosed |
| US-11205724-B2 | Self-aligned gate hard mask and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-12-21 | — | — | US | disclosed |
| US-11205709-B2 | Defect filling in patterned layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-12-21 | — | — | US | disclosed |
| CN-113793834-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-12-14 | — | — | CN | disclosed |
| US-20210375694-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-12-02 | — | — | US | disclosed |
| US-20210375629-A1 | Dipole-Engineered High-K Gate Dielectric and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-02 | — | — | US | disclosed |
| US-20210376073-A1 | CONFINED SOURCE/DRAIN EPITAXY REGIONS AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-12-02 | — | — | US | disclosed |
| US-20210375683-A1 | MULTI-CHANNEL DEVICES AND METHODS OF MANUFACTURE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-12-02 | — | — | US | disclosed |
| US-11189727-B2 | FinFET contacts and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-11-30 | — | — | US | disclosed |
| US-20210367058-A1 | PROCESSES FOR REMOVING SPIKES FROM GATES | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-11-25 | — | — | US | disclosed |
| US-20210367038-A1 | Semiconductor Device with Implant and Method of Manufacturing Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-11-25 | — | — | US | disclosed |
| US-20210367059-A1 | Dummy Fin Profile Control to Enlarge Gate Process Window | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-11-25 | — | — | US | disclosed |
| US-20210367033-A1 | SHALLOW TRENCH ISOLATION (STI) CONTACT STRUCTURES AND METHODS OF FORMING SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-11-25 | — | — | US | disclosed |
| US-20210366775-A1 | In-Situ Formation of Metal Gate Modulators | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-11-25 | — | — | US | disclosed |
| US-20210351281-A1 | Gate Profile Control Through Sidewall Protection During Etching | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-11-11 | — | — | US | disclosed |
| US-11171003-B2 | Doping through diffusion and epitaxy profile shaping | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-11-09 | — | — | US | disclosed |
| US-11171236-B2 | Cut-fin isolation regions and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-11-09 | — | — | US | disclosed |
| US-20210343597-A1 | FORMATION OF HYBRID ISOLATION REGIONS THROUGH RECESS AND RE-DEPOSITION | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-11-04 | — | — | US | disclosed |
| US-20210343590-A1 | Contact Conductive Feature Formation and Structure | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-11-04 | — | — | US | disclosed |
| US-20210335670-A1 | FORMING ISOLATION REGIONS FOR SEPARATING FINS AND GATE STACKS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-10-28 | — | — | US | disclosed |
| US-11158726-B2 | Controlling fin-thinning through feedback | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-10-26 | — | — | US | disclosed |
| US-11158740-B2 | MOSFETs with multiple dislocation planes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-10-26 | — | — | US | disclosed |
| CN-113540031-A | Semiconductor device structure | 台湾积体电路制造股份有限公司 | 2021-10-22 | — | — | CN | disclosed |
| US-20210327768-A1 | Hybrid Source Drain Regions Formed Based on Same Fin and Methods Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-10-21 | — | — | US | disclosed |
| US-20210327763-A1 | Dummy Fin with Reduced Height and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-10-21 | — | — | US | disclosed |
| US-20210327749-A1 | Trench Filling Through Reflowing Filling Material | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-10-21 | — | — | US | disclosed |
| US-20210328043-A1 | Selective Removal of Gate Dielectric from Dummy Fin | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-10-21 | — | — | US | disclosed |
| CN-113506773-A | Source/drain formation with reduced selective depletion defects | 台湾积体电路制造股份有限公司 | 2021-10-15 | — | — | CN | disclosed |
| US-11145728-B2 | Semiconductor device and method of forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-10-12 | — | — | US | disclosed |
| US-11145752-B2 | Residue removal in metal gate cutting process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-10-12 | — | — | US | disclosed |
| CN-113488434-A | Formation of composite work function layers using same work function materials | 台湾积体电路制造股份有限公司 | 2021-10-08 | — | — | CN | disclosed |
| US-20210313234-A1 | Increase the Volume of Epitaxy Regions | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-10-07 | — | — | US | disclosed |
| US-11139211-B2 | Selective NFET/PFET recess of source/drain regions | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-10-05 | — | — | US | disclosed |
| US-11133229-B2 | Forming transistor by selectively growing gate spacer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-09-28 | — | — | US | disclosed |
| US-11133307-B2 | FinFETs with locally thinned gate structures and having different distances therebetween | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-09-28 | — | — | US | disclosed |
| US-11133222-B2 | Method for manufacturing semiconductor structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2021-09-28 | — | — | US | disclosed |
| CN-110556360-B | Preventing metal loss using implantation | 台湾积体电路制造股份有限公司 | 2021-09-24 | — | — | CN | disclosed |
| US-20210296168-A1 | Conductive Feature Formation and Structure | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-09-23 | — | — | US | disclosed |
| CN-113421855-A | Method for forming semiconductor device | 台湾积体电路制造股份有限公司 | 2021-09-21 | — | — | CN | disclosed |
| US-11127741-B2 | Methods of manufacturing transistor gate structures by local thinning of dummy gate stacks using an etch barrier | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-09-21 | — | — | US | disclosed |
| CN-113410178-A | Semiconductor structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2021-09-17 | — | — | CN | disclosed |
| US-11121025-B2 | Layer for side wall passivation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-09-14 | — | — | US | disclosed |
| US-11120997-B2 | Surface treatment for etch tuning | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-09-14 | — | — | US | disclosed |
| CN-113394218-A | Semiconductor device and method for forming the same | 台湾积体电路制造股份有限公司 | 2021-09-14 | — | — | CN | disclosed |
| US-20210280695-A1 | Semiconductor Structure Cutting Process and Structures Formed Thereby | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-09-09 | — | — | US | disclosed |
| US-20210280472-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-09-09 | — | — | US | disclosed |
| US-20210280464-A1 | METAL GATES OF TRANSISTORS HAVING REDUCED RESISTIVITY | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-09-09 | — | — | US | disclosed |
| US-11114549-B2 | Semiconductor structure cutting process and structures formed thereby | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-09-07 | — | — | US | disclosed |
| US-11114545-B2 | Cap layer and anneal for gapfill improvement | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-09-07 | — | — | US | disclosed |
| CN-110323205-B | Semiconductor structure and method for forming semiconductor structure | 台湾积体电路制造股份有限公司 | 2021-09-03 | — | — | CN | disclosed |
| CN-113284950-A | Method of forming semiconductor device and semiconductor device | 台湾积体电路制造股份有限公司 | 2021-08-20 | — | — | CN | disclosed |
| US-20210257478-A1 | Reducing Pattern Loading in the Etch-Back of Metal Gate | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-08-19 | — | — | US | disclosed |
| US-20210257263-A1 | NMOS and PMOS Transistor Gates with Hafnium Oxide Layers and Lanthanum Oxide Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-08-19 | — | — | US | disclosed |
| US-20210257258-A1 | Multiple Threshold Voltage Implementation Through Lanthanum Incorporation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-08-19 | — | — | US | disclosed |
| CN-113270369-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-08-17 | — | — | CN | disclosed |
| CN-110223954-B | Conductive feature formation method and structure | 台湾积体电路制造股份有限公司 | 2021-08-17 | — | — | CN | disclosed |
| CN-108962994-B | Implants for forming source/drain regions of different transistors | 台湾积体电路制造股份有限公司 | 2021-08-17 | — | — | CN | disclosed |
| CN-113257898-A | Dipole design high-K gate dielectric and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-08-13 | — | — | CN | disclosed |
| US-11088249-B2 | Semiconductor device with implant and method of manufacturing same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-08-10 | — | — | US | disclosed |
| CN-113223964-A | Process for removing spikes from a gate | 台湾积体电路制造股份有限公司 | 2021-08-06 | — | — | CN | disclosed |
| CN-113224007-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-08-06 | — | — | CN | disclosed |
| CN-113224006-A | Metal gate modulator and in-situ forming method thereof | 台湾积体电路制造股份有限公司 | 2021-08-06 | — | — | CN | disclosed |
| US-20210242212-A1 | Buried Metal Track and Methods Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-08-05 | — | — | US | disclosed |
| US-20210242081-A1 | Selective Hybrid Capping Layer for Metal Gates of Transistors | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-08-05 | — | — | US | disclosed |
| US-20210233817-A1 | Adjusting Work Function Through Adjusting Deposition Temperature | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-07-29 | — | — | US | disclosed |
| CN-113178417-A | Semiconductor structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2021-07-27 | — | — | CN | disclosed |
| CN-108735604-B | Method for forming transistor | 台湾积体电路制造股份有限公司 | 2021-07-23 | — | — | CN | disclosed |
| US-20210226021-A1 | SEMICONDUCTOR DEVICE AND FORMATION METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-07-22 | — | — | US | disclosed |
| US-20210225692-A1 | Dielectric Gap Fill | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-07-22 | — | — | US | disclosed |
| CN-113140507-A | Semiconductor device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2021-07-20 | — | — | CN | disclosed |
| CN-113130394-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2021-07-16 | — | — | CN | disclosed |
| US-11062941-B2 | Contact conductive feature formation and structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-07-13 | — | — | US | disclosed |
| CN-113097304-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2021-07-09 | — | — | CN | disclosed |
| CN-113078111-A | Dummy fins having reduced height and methods of forming the same | 台湾积体电路制造股份有限公司 | 2021-07-06 | — | — | CN | disclosed |
| CN-113078110-A | Trench fill by reflowing fill material | 台湾积体电路制造股份有限公司 | 2021-07-06 | — | — | CN | disclosed |
| US-20210202712-A1 | Air Spacers in Transistors and Methods Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-07-01 | — | — | US | disclosed |
| US-20210202713-A1 | Contact Plugs and Methods Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-07-01 | — | — | US | disclosed |
| US-11049774-B2 | Hybrid source drain regions formed based on same Fin and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-06-29 | — | — | US | disclosed |
| CN-113054018-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2021-06-29 | — | — | CN | disclosed |
| CN-113054021-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2021-06-29 | — | — | CN | disclosed |
| CN-113035782-A | Deposition process for forming semiconductor devices and systems | 台湾积体电路制造股份有限公司 | 2021-06-25 | — | — | CN | disclosed |
| US-20210193454-A1 | DEPOSITION PROCESS FOR FORMING SEMICONDUCTOR DEVICE AND SYSTEM | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-06-24 | — | — | US | disclosed |
| US-20210193517-A1 | Conductive Feature Formation and Structure Using Bottom-Up Filling Deposition | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-06-24 | — | — | US | disclosed |
| US-20210193831-A1 | Interfacial Layer Between Fin and Source/Drain Region | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-06-24 | — | — | US | disclosed |
| US-11043424-B2 | Increase the volume of epitaxy regions | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-06-22 | — | — | US | disclosed |
| CN-112992788-A | Method for controlling gate formation of semiconductor device and system for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2021-06-18 | — | — | CN | disclosed |
| US-20210183713-A1 | Gate Formation Of Semiconductor Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-06-17 | — | — | US | disclosed |
| US-20210175125-A1 | Slot Contacts and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-06-10 | — | — | US | disclosed |
| US-11031300-B2 | Semiconductor structure and method for manufacturing the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2021-06-08 | — | — | US | disclosed |
| US-11031286-B2 | Conductive feature formation and structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-06-08 | — | — | US | disclosed |
| CN-110504155-B | Formation of low stress silicon nitride layer by hydrogen treatment | 台湾积体电路制造股份有限公司 | 2021-05-25 | — | — | CN | disclosed |
| US-11011433-B2 | NMOS and PMOS transistor gates with hafnium oxide layers and lanthanum oxide layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-05-18 | — | — | US | disclosed |
| CN-109326561-B | Method for manufacturing fin field effect transistor | 台湾积体电路制造股份有限公司 | 2021-05-14 | — | — | CN | disclosed |
| US-11004855-B2 | Buried metal track and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-05-11 | — | — | US | disclosed |
| CN-108288604-B | Contact plug and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2021-05-07 | — | — | CN | disclosed |
| US-20210134974-A1 | Transistors with Reduced Defect and Methods Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-05-06 | — | — | US | disclosed |
| US-20210134973-A1 | Air Spacers Around Contact Plugs and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-05-06 | — | — | US | disclosed |
| US-20210134969-A1 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-05-06 | — | — | US | disclosed |
| US-20210134983-A1 | Non-Conformal Capping Layer and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-05-06 | — | — | US | disclosed |
| CN-112750767-A | Non-conformal capping layer and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-05-04 | — | — | CN | disclosed |
| CN-112750771-A | Fin end gate structure and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-05-04 | — | — | CN | disclosed |
| CN-112750768-A | Dummy gate cutting process and resulting gate structure | 台湾积体电路制造股份有限公司 | 2021-05-04 | — | — | CN | disclosed |
| CN-112750818-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-05-04 | — | — | CN | disclosed |
| CN-112750816-A | Semiconductor device with a plurality of semiconductor chips | 台湾积体电路制造股份有限公司 | 2021-05-04 | — | — | CN | disclosed |
| CN-112750762-A | Semiconductor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2021-05-04 | — | — | CN | disclosed |
| US-10998421-B2 | Reducing pattern loading in the etch-back of metal gate | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-05-04 | — | — | US | disclosed |
| US-20210126110-A1 | Fin-End Gate Structures and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-04-29 | — | — | US | disclosed |
| US-20210126097-A1 | Semiconductor Devices and Methods | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-04-29 | — | — | US | disclosed |
| US-20210126113-A1 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-04-29 | — | — | US | disclosed |
| US-20210126134-A1 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-04-29 | — | — | US | disclosed |
| US-20210126109-A1 | Dummy Gate Cutting Process and Resulting Gate Structures | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-04-29 | — | — | US | disclosed |
| US-20210125874-A1 | Forming Nitrogen-Containing Low-K Gate Spacer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-04-29 | — | — | US | disclosed |
| CN-109427775-B | Integrated circuit and forming method thereof | 台湾积体电路制造股份有限公司 | 2021-04-27 | — | — | CN | disclosed |
| US-10971391-B2 | Dielectric gap fill | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-04-06 | — | — | US | disclosed |
| US-20210098499-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-04-01 | — | — | US | disclosed |
| US-20210098459-A1 | Hybrid Scheme for Improved Performance for P-type and N-type FinFETs | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-04-01 | — | — | US | disclosed |
| CN-112582403-A | Semiconductor structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2021-03-30 | — | — | CN | disclosed |
| US-10964795-B2 | Air spacers in transistors and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-30 | — | — | US | disclosed |
| CN-112582412-A | Integrated circuit device | 台湾积体电路制造股份有限公司 | 2021-03-30 | — | — | CN | disclosed |
| US-20210090948-A1 | Bottom-up Formation of Contact Plugs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-25 | — | — | US | disclosed |
| CN-112542422-A | Semiconductor device and method of forming a semiconductor device | 台湾积体电路制造股份有限公司 | 2021-03-23 | — | — | CN | disclosed |
| CN-112530868-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2021-03-19 | — | — | CN | disclosed |
| CN-112530870-A | Method of forming semiconductor device | 台湾积体电路制造股份有限公司 | 2021-03-19 | — | — | CN | disclosed |
| US-20210082821-A1 | METHODS OF FABRICATING INTEGRATED CIRCUIT DEVICES HAVING RAISED VIA CONTACTS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-18 | — | — | US | disclosed |
| US-20210083072-A1 | Residue Removal in Metal Gate Cutting Process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-18 | — | — | US | disclosed |
| US-20210082773-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-03-18 | — | — | US | disclosed |
| US-20210083119-A1 | Contact Interface Engineering for Reducing Contact Resistance | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-18 | — | — | US | disclosed |
| US-20210082706-A1 | Methods for Doping High-K Metal Gates for Tuning Threshold Voltages | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-18 | — | — | US | disclosed |
| US-20210083056-A1 | Semiconductor Device with Implant and Method of Manufacturing Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-18 | — | — | US | disclosed |
| US-20210083118-A1 | Gate Resistance Reduction Through Low-Resistivity Conductive Layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-18 | — | — | US | disclosed |
| US-20210083052-A1 | Supportive Layer in Source/Drains of FinFET Devices | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-03-18 | — | — | US | disclosed |
| US-20210082694-A1 | Controlling Threshold Voltages Through Blocking Layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-18 | — | — | US | disclosed |
| CN-108807160-B | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-03-16 | — | — | CN | disclosed |
| CN-112510091-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-03-16 | — | — | CN | disclosed |
| CN-112510090-A | Integrated circuit device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-03-16 | — | — | CN | disclosed |
| US-20210074580-A1 | Conductive Feature Formation and Structure | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-03-11 | — | — | US | disclosed |
| US-10943829-B2 | Slot contacts and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-09 | — | — | US | disclosed |
| US-10944005-B2 | Interfacial layer between fin and source/drain region | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-09 | — | — | US | disclosed |
| US-10943823-B2 | Conductive feature formation and structure using bottom-up filling deposition | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-03-09 | — | — | US | disclosed |
| CN-112447598-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2021-03-05 | — | — | CN | disclosed |
| CN-112447522-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2021-03-05 | — | — | CN | disclosed |
| US-20210066506-A1 | SEMICONDUCTOR MANUFACTURING | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-04 | — | — | US | disclosed |
| US-20210066452-A1 | SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-04 | — | — | US | disclosed |
| US-20210066100-A1 | Semiconductor Devices and Methods of Manufacturing | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-03-04 | — | — | US | disclosed |
| US-10937877-B2 | Methods for forming recesses in source/drain regions and devices formed thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2021-03-02 | — | — | US | disclosed |
| CN-112420612-A | FINFET contact and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-02-26 | — | — | CN | disclosed |
| US-20210057287-A1 | Footing Removal in Cut-Metal Process | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-02-25 | — | — | US | disclosed |
| US-20210057571-A1 | FINFET CONTACTS AND METHOD FORMING SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-02-25 | — | — | US | disclosed |
| US-20210057546-A1 | Low-K Gate Spacer and Methods for Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-02-25 | — | — | US | disclosed |
| US-20210057552-A1 | Increasing Source/Drain Dopant Concentration to Reduced Resistance | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-02-25 | — | — | US | disclosed |
| US-10930752-B2 | Contact plugs and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-02-23 | — | — | US | disclosed |
| US-20210050256-A1 | Metal Gates of Transistors Having Reduced Resistivity | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-02-18 | — | — | US | disclosed |
| US-20210035861-A1 | Barrier-Free Approach For Forming Contact Plugs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-02-04 | — | — | US | disclosed |
| US-20210035810-A1 | Ultra Narrow Trench Patterning with Dry Plasma Etching | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-02-04 | — | — | US | disclosed |
| US-20210036130-A1 | Controlling Fin-Thinning Through Feedback | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-02-04 | — | — | US | disclosed |
| CN-112309964-A | Semiconductor device structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2021-02-02 | — | — | CN | disclosed |
| CN-112309959-A | Integrated circuit structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2021-02-02 | — | — | CN | disclosed |
| CN-112309867-A | Fin thinning by feedback control | 台湾积体电路制造股份有限公司 | 2021-02-02 | — | — | CN | disclosed |
| US-10910471-B2 | Device with large EPI in FinFETs and method of manufacturing | GLOBALFOUNDRIES INC. (KY) | 2021-02-02 | — | — | US | disclosed |
| US-10910223-B2 | Doping through diffusion and epitaxy profile shaping | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-02-02 | — | — | US | disclosed |
| US-20210020642-A1 | Conductive Feature Formation | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2021-01-21 | — | — | US | disclosed |
| US-20210020524-A1 | Hybrid Source Drain Regions Formed Based on Same Fin and Methods Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2021-01-21 | — | — | US | disclosed |
| CN-112242357-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2021-01-19 | — | — | CN | disclosed |
| CN-107039277-B | Stress memorization techniques for transistor devices | 格罗方德半导体公司 | 2021-01-08 | — | — | CN | disclosed |
| US-10879370-B2 | Etching back and selective deposition of metal gate | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-29 | — | — | US | disclosed |
| US-10879369-B2 | FinFET device and method of manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-29 | — | — | US | disclosed |
| US-10879074-B2 | Method of forming semiconductor device and semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-12-29 | — | — | US | disclosed |
| US-10879075-B2 | Wrap-around contact plug and method manufacturing same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-29 | — | — | US | disclosed |
| US-20200402858-A1 | SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2020-12-24 | — | — | US | disclosed |
| US-20200402795-A1 | Selective Capping Processes and Structures Formed Thereby | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-12-24 | — | — | US | disclosed |
| US-10872818-B2 | Buried power rail and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-22 | — | — | US | disclosed |
| US-10872906-B2 | Semiconductor device and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-12-22 | — | — | US | disclosed |
| US-10872821-B1 | Semiconductor structure and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2020-12-22 | — | — | US | disclosed |
| US-10868014-B2 | Hybrid scheme for improved performance for P-type and N-type FinFETs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-15 | — | — | US | disclosed |
| US-10868015-B2 | Hybrid scheme for improved performance for P-type and N-type FinFETs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-15 | — | — | US | disclosed |
| US-10868138-B2 | Metal gate formation through etch back process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-15 | — | — | US | disclosed |
| US-10868140-B2 | Gap-filling germanium through selective bottom-up growth | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-15 | — | — | US | disclosed |
| US-10868178-B2 | Field effect transistor contact with reduced contact resistance using implantation process | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-12-15 | — | — | US | disclosed |
| US-10868139-B2 | Controlling profiles of replacement gates | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-15 | — | — | US | disclosed |
| US-10867859-B2 | Methods of fabricating semiconductor devices having isolation structures with liners | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-12-15 | — | — | US | disclosed |
| US-10867842-B2 | Method for shrinking openings in forming integrated circuits | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-15 | — | — | US | disclosed |
| US-10861959-B2 | Deposition selectivity enhancement and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-08 | — | — | US | disclosed |
| US-10861953-B2 | Air spacers in transistors and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-12-08 | — | — | US | disclosed |
| CN-109585372-B | Method of forming semiconductor device | 台湾积体电路制造股份有限公司 | 2020-12-08 | — | — | CN | disclosed |
| US-20200381298-A1 | Shared Contact Structure and Methods for Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-12-03 | — | — | US | disclosed |
| US-10854715-B2 | Supportive layer in source/drains of FinFET devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-12-01 | — | — | US | disclosed |
| US-20200373412-A1 | Selective Silicon Growth for Gapfill Improvement | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-11-26 | — | — | US | disclosed |
| US-10847411-B2 | Conductive feature formation and structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-11-24 | — | — | US | disclosed |
| US-10847638-B2 | Increasing source/drain dopant concentration to reduced resistance | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-11-24 | — | — | US | disclosed |
| US-20200365450-A1 | Low-Resistance Contact Plugs and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-11-19 | — | — | US | disclosed |
| US-10840189-B2 | Integrated circuit devices having raised via contacts and methods of fabricating the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-11-17 | — | — | US | disclosed |
| US-10840355-B2 | Increasing source/drain dopant concentration to reduced resistance | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-11-17 | — | — | US | disclosed |
| US-10840152-B2 | Semiconductor device and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-11-17 | — | — | US | disclosed |
| US-10833170-B2 | Low-k gate spacer and methods for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-11-10 | — | — | US | disclosed |
| US-20200350417-A1 | FinFET Device and Method of Manufacture | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-11-05 | — | — | US | disclosed |
| US-20200350414-A1 | Selective Etching to Increase Threshold Voltage Spread | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-11-05 | — | — | US | disclosed |
| US-20200350172-A1 | Cut Metal Gate Processes | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-11-05 | — | — | US | disclosed |
| US-20200350433-A1 | Stress Modulation for Dielectric Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-11-05 | — | — | US | disclosed |
| US-10825727-B2 | Metal gates of transistors having reduced resistivity | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-11-03 | — | — | US | disclosed |
| CN-111863620-A | Integrated circuit device and method of manufacturing the same | 台湾积体电路制造股份有限公司 | 2020-10-30 | — | — | CN | disclosed |
| CN-111863810-A | Semiconductor device structure and forming method thereof | 台湾积体电路制造股份有限公司 | 2020-10-30 | — | — | CN | disclosed |
| US-20200343351-A1 | Methods for Forming Recesses in Source/Drain Regions and Devices Formed Thereof | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-10-29 | — | — | US | disclosed |
| US-20200343135-A1 | Phase Control in Contact Formation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-10-29 | — | — | US | disclosed |
| CN-111834297-A | Integrated circuit device and method for manufacturing integrated circuit device | 台湾积体电路制造股份有限公司 | 2020-10-27 | — | — | CN | disclosed |
| US-10811270-B2 | Ultra narrow trench patterning using plasma etching | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-10-20 | — | — | US | disclosed |
| US-10811320-B2 | Footing removal in cut-metal process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-10-20 | — | — | US | disclosed |
| US-10804140-B2 | Interconnect formation and structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-10-13 | — | — | US | disclosed |
| US-20200321253-A1 | Forming Nitrogen-Containing Low-K Gate Spacer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-10-08 | — | — | US | disclosed |
| US-10797058-B2 | Conductive feature formation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-10-06 | — | — | US | disclosed |
| US-20200312848-A1 | Hybrid Scheme for Improved Performance for P-type and N-type FinFETs | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-10-01 | — | — | US | disclosed |
| US-10790142-B2 | Selective capping processes and structures formed thereby | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-09-29 | — | — | US | disclosed |
| CN-111696859-A | Ultra narrow channel patterning using plasma etch | 台湾积体电路制造股份有限公司 | 2020-09-22 | — | — | CN | disclosed |
| US-10784106-B2 | Selective film growth for bottom-up gap filling | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-09-22 | — | — | US | disclosed |
| CN-111681959-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2020-09-18 | — | — | CN | disclosed |
| US-20200294805-A1 | Tuning Threshold Voltage Through Meta Stable Plasma Treatment | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-09-17 | — | — | US | disclosed |
| US-20200295014-A1 | Implantations for Forming Source/Drain Regions of Different Transistors | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-09-17 | — | — | US | disclosed |
| US-20200294809-A1 | Ultra Narrow Trench Patterning Using Plasma Etching | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-09-17 | — | — | US | disclosed |
| US-20200294804-A1 | METHOD OF FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-09-17 | — | — | US | disclosed |
| US-20200295135-A1 | High Surface Dopant Concentration Formation Processes and Structures Formed Thereby | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-09-17 | — | — | US | disclosed |
| US-10777664-B2 | Epitaxy source/drain regions of FinFETs and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-09-15 | — | — | US | disclosed |
| US-20200287042-A1 | Self-Aligned Gate Hard Mask and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-09-10 | — | — | US | disclosed |
| US-10770288-B2 | Selective capping processes and structures formed thereby | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-09-08 | — | — | US | disclosed |
| US-20200279944-A1 | Source/Drain Structure | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-09-03 | — | — | US | disclosed |
| US-10755978-B2 | Shared contact structure and methods for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-08-25 | — | — | US | disclosed |
| US-20200258746-A1 | Wrap-Around Contact Plug and Method Manufacturing Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-08-13 | — | — | US | disclosed |
| US-10741438-B2 | Low-resistance contact plugs and method forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-08-11 | — | — | US | disclosed |
| US-10741674-B2 | Selective silicon growth for gapfill improvement | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-08-11 | — | — | US | disclosed |
| US-20200251390-A1 | Methods for Forming Transistor Gates with Hafnium Oxide Layers and Lanthanum Oxide Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-08-06 | — | — | US | disclosed |
| US-20200251578-A1 | Gate Formation with Varying Work Function Layers | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-08-06 | — | — | US | disclosed |
| CN-107689396-B | Transistor and forming method thereof | 台湾积体电路制造股份有限公司 | 2020-07-31 | — | — | CN | disclosed |
| US-10727064-B2 | Post UV cure for gapfill improvement | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-07-28 | — | — | US | disclosed |
| US-10720526-B2 | Stress modulation for dielectric layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-07-21 | — | — | US | disclosed |
| US-10720507-B2 | FinFET device and method of manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-07-21 | — | — | US | disclosed |
| US-10714578-B2 | Methods for forming recesses in source/drain regions and devices formed thereof | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-07-14 | — | — | US | disclosed |
| US-10714347-B2 | Cut metal gate processes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-07-14 | — | — | US | disclosed |
| US-20200203222-A1 | Contact Conductive Feature Formation and Structure | TAIWAN SEMICONDUCTOR MANFACTURING COMPANY LTD (TW) | 2020-06-25 | — | — | US | disclosed |
| US-10692773-B2 | Forming nitrogen-containing low-K gate spacer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-06-23 | — | — | US | disclosed |
| US-10686075-B2 | Self-aligned gate hard mask and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-06-16 | — | — | US | disclosed |
| US-10685967-B2 | Implantations for forming source/drain regions of different transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-06-16 | — | — | US | disclosed |
| US-20200185278-A1 | Selective NFET/PFET Recess of Source/Drain Regions | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-06-11 | — | — | US | disclosed |
| CN-111244084-A | Confined source/drain epitaxial region and method of forming same | 台湾积体电路制造股份有限公司 | 2020-06-05 | — | — | CN | disclosed |
| US-20200176560-A1 | Confined Source/Drain Epitaxy Regions and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-06-04 | — | — | US | disclosed |
| US-10672871-B2 | High surface dopant concentration formation processes and structures formed thereby | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-06-02 | — | — | US | disclosed |
| US-10672613-B2 | Method of forming semiconductor structure and semiconductor device | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-06-02 | — | — | US | disclosed |
| US-10672764-B2 | Integrated circuit semiconductor devices including a metal oxide semiconductor (MOS) transistor | SAMSUNG ELECTRONCIS CO., LTD. (KR) | 2020-06-02 | — | — | US | disclosed |
| CN-111211089-A | Integrated circuit structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2020-05-29 | — | — | CN | disclosed |
| CN-111200023-A | Integrated circuit device and method of forming integrated circuit structure | 台湾积体电路制造股份有限公司 | 2020-05-26 | — | — | CN | disclosed |
| US-20200161170-A1 | Silicon Oxide Layer for Oxidation Resistance and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-05-21 | — | — | US | disclosed |
| US-20200161297-A1 | Transistors with Recessed Silicon Cap and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-05-21 | — | — | US | disclosed |
| US-10658491-B2 | Controlling profiles of replacement gates | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-05-19 | — | — | US | disclosed |
| US-10658510-B2 | Source/drain structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-05-19 | — | — | US | disclosed |
| CN-107665862-B | Doping by diffusion and epitaxial profiling | 台湾积体电路制造股份有限公司 | 2020-05-15 | — | — | CN | disclosed |
| US-20200152632-A1 | Hybrid Scheme for Improved Performance for P-type and N-type FinFETs | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-05-14 | — | — | US | disclosed |
| US-20200152771-A1 | Selective Silicon Growth for Gapfill Improvement | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-05-14 | — | — | US | disclosed |
| US-20200152763-A1 | Method of Forming a Contact with a Silicide Region | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-05-14 | — | — | US | disclosed |
| US-20200152522-A1 | Forming Transistor by Selectively Growing Gate Spacer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-05-14 | — | — | US | disclosed |
| US-10651296-B2 | Methods of fabricating Fin Field Effect Transistor (FinFET) devices with uniform tension using implantations on top and sidewall of Fin | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-05-12 | — | — | US | disclosed |
| US-10644134-B2 | Gate formation with varying work function layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-05-05 | — | — | US | disclosed |
| US-10643892-B2 | Metal loss prevention using implantation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-05-05 | — | — | US | disclosed |
| CN-111105991-A | Method for manufacturing semiconductor structure | 台湾积体电路制造股份有限公司 | 2020-05-05 | — | — | CN | disclosed |
| CN-111106000-A | Method of forming semiconductor device | 台湾积体电路制造股份有限公司 | 2020-05-05 | — | — | CN | disclosed |
| CN-111106059-A | Integrated circuit structure and method of forming an integrated circuit structure | 台湾积体电路制造股份有限公司 | 2020-05-05 | — | — | CN | disclosed |
| CN-111092053-A | Method for forming integrated circuit structure and integrated circuit | 台湾积体电路制造股份有限公司 | 2020-05-01 | — | — | CN | disclosed |
| CN-111092052-A | Integrated circuit device and method of forming integrated circuit structure | 台湾积体电路制造股份有限公司 | 2020-05-01 | — | — | CN | disclosed |
| US-20200135634-A1 | Buried Power Rail and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-04-30 | — | — | US | disclosed |
| US-20200135586-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2020-04-30 | — | — | US | disclosed |
| US-20200135472-A1 | Cut Metal Gate Processes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-04-30 | — | — | US | disclosed |
| US-20200135546-A1 | Method for Shrinking Openings in Forming Integrated Circuits | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-04-30 | — | — | US | disclosed |
| US-20200135768-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-04-30 | — | — | US | disclosed |
| US-10636664-B2 | Wrap-around contact plug and method manufacturing same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-04-28 | — | — | US | disclosed |
| US-20200126865-A1 | Slot Contacts and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-04-23 | — | — | US | disclosed |
| US-20200126797-A1 | Silicon Intermixing Layer for Blocking Diffusion | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-04-23 | — | — | US | disclosed |
| US-10629496-B2 | Methods for forming transistor gates with hafnium oxide layers and lanthanum oxide layers | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-04-21 | — | — | US | disclosed |
| US-20200119195-A1 | Field Effect Transistor Contact with Reduced Contact Resistance Using Implantation Process | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-04-16 | — | — | US | disclosed |
| US-20200118873-A1 | Metal Gates of Transistors Having Reduced Resistivity | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-04-16 | — | — | US | disclosed |
| CN-110970395-A | Conductive feature formation | 台湾积体电路制造股份有限公司 | 2020-04-07 | — | — | CN | disclosed |
| CN-110970303-A | Semiconductor device and method of forming the same | 台湾积体电路制造股份有限公司 | 2020-04-07 | — | — | CN | disclosed |
| CN-110957356-A | Semiconductor device manufacturing method and semiconductor device | 台湾积体电路制造股份有限公司 | 2020-04-03 | — | — | CN | disclosed |
| CN-110957274-A | Method for fabricating semiconductor structure | 台湾积体电路制造股份有限公司 | 2020-04-03 | — | — | CN | disclosed |
| US-20200105615-A1 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-04-02 | — | — | US | disclosed |
| US-20200105895-A1 | Capping Layers in Metal Gates of Transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-04-02 | — | — | US | disclosed |
| US-20200105618-A1 | METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2020-04-02 | — | — | US | disclosed |
| US-20200105586-A1 | Layer for Side Wall Passivation | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-04-02 | — | — | US | disclosed |
| US-20200105767-A1 | Conductive Feature Formation | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-04-02 | — | — | US | disclosed |
| US-20200090999-A1 | Shared Contact Structure and Methods for Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-03-19 | — | — | US | disclosed |
| US-20200083351-A1 | Etching Back and Selective Deposition of Metal Gate | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-03-12 | — | — | US | disclosed |
| CN-110875250-A | Semiconductor process method and semiconductor structure | 台湾积体电路制造股份有限公司 | 2020-03-10 | — | — | CN | disclosed |
| US-20200075745-A1 | Cap Layer and Anneal for Gapfill Improvement | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-03-05 | — | — | US | disclosed |
| US-20200075586-A1 | Methods of Manufacturing Transistor Gate Structures by Local Thinning of Dummy Gate Stacks Using an Etch Barrier | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-03-05 | — | — | US | disclosed |
| US-20200075588-A1 | Methods of Manufacturing Transistor Gate Structures by Local Thinning of Dummy Gate Stacks Using an Etch Barrier | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-03-05 | — | — | US | disclosed |
| US-20200075342-A1 | Surface Treatment for Etch Tuning | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-03-05 | — | — | US | disclosed |
| US-10580693-B2 | Contact conductive feature formation and structure | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-03-03 | — | — | US | disclosed |
| US-20200052089-A1 | GAP-FILLING GERMANIUM THROUGH SELECTIVE BOTTOM-UP GROWTH | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-02-13 | — | — | US | disclosed |
| US-20200051858-A1 | Conductive Feature Formation and Structure Using Bottom-Up Filling Deposition | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-02-13 | — | — | US | disclosed |
| CN-110783268-A | Method for forming semiconductor and semiconductor device | 台湾积体电路制造股份有限公司 | 2020-02-11 | — | — | CN | disclosed |
| CN-110783267-A | Cut fin isolation region and method of forming the same | 台湾积体电路制造股份有限公司 | 2020-02-11 | — | — | CN | disclosed |
| US-20200043738-A1 | Wrap-Around Contact Plug and Method Manufacturing Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-02-06 | — | — | US | disclosed |
| US-20200043805-A1 | SEMICONDUCTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (TW) | 2020-02-06 | — | — | US | disclosed |
| US-20200043793-A1 | Increase the Volume of Epitaxy Regions | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-02-06 | — | — | US | disclosed |
| US-20200044070-A1 | Cut-Fin Isolation Regions and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-02-06 | — | — | US | disclosed |
| US-20200043730-A1 | Selective Film Growth for Bottom-Up Gap Filling | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-02-06 | — | — | US | disclosed |
| US-10553492-B2 | Selective NFET/PFET recess of source/drain regions | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-02-04 | — | — | US | disclosed |
| US-20200035797-A1 | Methods for Forming Recesses in Source/Drain Regions and Devices Formed Thereof | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-01-30 | — | — | US | disclosed |
| US-20200035506-A1 | Method of Gap Filling Using Conformal Deposition-Annealing-Etching Cycle for Reducing Seam Void and Bending | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-01-30 | — | — | US | disclosed |
| US-20200035815-A1 | METHODS OF FABRICATING FIN FIELD EFFECT TRANSISTOR (FINFET) DEVICES USING IMPLANTATIONS ON TOP AND SIDEWALL OF FIN | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-01-30 | — | — | US | disclosed |
| US-20200035809-A1 | Low-K Gate Spacer and Methods for Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-01-30 | — | — | US | disclosed |
| US-20200035605-A1 | INTEGRATED CIRCUIT DEVICES HAVING RAISED VIA CONTACTS AND METHODS OF FABRICATING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2020-01-30 | — | — | US | disclosed |
| CN-110729191-A | Reducing pattern loading in metal gate etch back | 台湾积体电路制造股份有限公司 | 2020-01-24 | — | — | CN | disclosed |
| CN-110718521-A | Butt contact structure | 台湾积体电路制造股份有限公司 | 2020-01-21 | — | — | CN | disclosed |
| CN-110660853-A | Method for forming gate spacer and semiconductor device | 台湾积体电路制造股份有限公司 | 2020-01-07 | — | — | CN | disclosed |
| CN-110660857-A | Semiconductor process method and semiconductor device | 台湾积体电路制造股份有限公司 | 2020-01-07 | — | — | CN | disclosed |
| CN-110660735-A | Stress modulation for dielectric layers | 台湾积体电路制造股份有限公司 | 2020-01-07 | — | — | CN | disclosed |
| CN-110648918-A | Semiconductor structure and manufacturing method thereof | 台湾积体电路制造股份有限公司 | 2020-01-03 | — | — | CN | disclosed |
| US-20200006486-A1 | High Surface Dopant Concentration Formation Processes and Structures Formed Thereby | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2020-01-02 | — | — | US | disclosed |
| CN-110634745-A | Semiconductor process | 台湾积体电路制造股份有限公司 | 2019-12-31 | — | — | CN | disclosed |
| CN-110634799-A | Method for forming semiconductor device and semiconductor device | 台湾积体电路制造股份有限公司 | 2019-12-31 | — | — | CN | disclosed |
| CN-110610859-A | Method for forming fin field effect transistor and semiconductor device | 台湾积体电路制造股份有限公司 | 2019-12-24 | — | — | CN | disclosed |
| US-10515955-B1 | Methods of manufacturing transistor gate structures by local thinning of dummy gate stacks using an etch barrier | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-12-24 | — | — | US | disclosed |
| CN-110600421-A | Dielectric gap filling | 台湾积体电路制造股份有限公司 | 2019-12-20 | — | — | CN | disclosed |
| US-10510600-B1 | Shared contact structure and methods for forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-12-17 | — | — | US | disclosed |
| US-10510865-B2 | Cap layer and anneal for gapfill improvement | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-12-17 | — | — | US | disclosed |
| CN-110556360-A | preventing metal loss using implantation | TAIWAN SEMICONDUCTOR MFG CO LTD | 2019-12-10 | — | — | CN | disclosed |
| CN-110556417-A | Method of forming recesses in source/drain regions and devices formed thereby | TAIWAN SEMICONDUCTOR MFG CO LTD | 2019-12-10 | — | — | CN | disclosed |
| CN-110544691-A | semiconductor structure and method for semiconductor processing | TAIWAN SEMICONDUCTOR MFG CO LTD | 2019-12-06 | — | — | CN | disclosed |
| US-20190355570-A1 | Forming Low-Stress Silicon Nitride Layer Through Hydrogen Treatment | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-11-21 | — | — | US | disclosed |
| US-10483396-B1 | Interfacial layer between fin and source/drain region | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-11-19 | — | — | US | disclosed |
| US-10475702-B2 | Conductive feature formation and structure using bottom-up filling deposition | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-11-12 | — | — | US | disclosed |
| US-10475654-B2 | Wrap-around contact plug and method manufacturing same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-11-12 | — | — | US | disclosed |
| US-20190341387-A1 | Buried Metal Track and Methods Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-11-07 | — | — | US | disclosed |
| US-20190341472-A1 | Increasing Source/Drain Dopant Concentration to Reduced Resistance | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-11-07 | — | — | US | disclosed |
| US-20190341476-A1 | Deposition Selectivity Enhancement and Manufacturing Method Thereof | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-11-07 | — | — | US | disclosed |
| US-10468501-B2 | Gap-filling germanium through selective bottom-up growth | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-11-05 | — | — | US | disclosed |
| US-10468260-B2 | Wrap-around contact plug and method manufacturing same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-11-05 | — | — | US | disclosed |
| US-20190333820-A1 | SELECTIVE NFET/PFET RECESS OF SOURCE/DRAIN REGIONS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-10-31 | — | — | US | disclosed |
| US-20190334008-A1 | AIR SPACERS IN TRANSISTORS AND METHODS FORMING SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-10-31 | — | — | US | disclosed |
| CN-110379703-A | Semiconductor technology method | 台湾积体电路制造股份有限公司 | 2019-10-25 | — | — | CN | disclosed |
| US-20190319113-A1 | CAP LAYER AND ANNEAL FOR GAPFILL IMPROVEMENT | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-10-17 | — | — | US | disclosed |
| US-20190318932-A1 | Post UV Cure for Gapfill Improvement | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-10-17 | — | — | US | disclosed |
| US-20190319098-A1 | Supportive Layer in Source/Drains of FinFET Devices | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-10-17 | — | — | US | disclosed |
| US-10446555-B2 | Buried metal track and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-10-15 | — | — | US | disclosed |
| US-20190304833-A1 | Conductive Feature Formation and Structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-10-03 | — | — | US | disclosed |
| CN-110277350-A | Semiconductor technology method | 台湾积体电路制造股份有限公司 | 2019-09-24 | — | — | CN | disclosed |
| US-20190287851-A1 | Conductive Feature Formation and Structure Using Bottom-Up Filling Deposition | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-09-19 | — | — | US | disclosed |
| US-20190279992-A1 | Implantations for Forming Source/Drain Regions of Different Transistors | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-09-12 | — | — | US | disclosed |
| US-20190273023-A1 | Conductive Feature Formation and Structure | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-09-05 | — | — | US | disclosed |
| US-20190273147-A1 | CONFORMAL METAL DIFFUSION BARRIER AND PLASMA TREATMENT FOR OXIDIZED METAL BARRIER | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-09-05 | — | — | US | disclosed |
| US-20190252376-A1 | INTEGRATED CIRCUIT SEMICONDUCTOR DEVICES INCLUDING A METAL OXIDE SEMICONDUCTOR (MOS) TRANSISTOR | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2019-08-15 | — | — | US | disclosed |
| US-20190245077-A1 | MOSFETs with Multiple Dislocation Planes | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-08-08 | — | — | US | disclosed |
| US-10355111-B2 | Deposition selectivity enhancement and manufacturing method thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-07-16 | — | — | US | disclosed |
| US-10347762-B1 | Field effect transistor contact with reduced contact resistance using implantation process | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-07-09 | — | — | US | disclosed |
| US-10347741-B1 | Gapfill improvement | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-07-09 | — | — | US | disclosed |
| US-10332746-B1 | Post UV cure for gapfill improvement | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-06-25 | — | — | US | disclosed |
| US-20190165099-A1 | HIGH SURFACE DOPANT CONCENTRATION FORMATION PROCESSES AND STRUCTURES FORMED THEREBY | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-05-30 | — | — | US | disclosed |
| US-20190165137-A1 | Semiconductor Structure Cutting Process and Structures Formed Thereby | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-05-30 | — | — | US | disclosed |
| US-20190164751-A1 | Selective Capping Processes and Structures Formed Thereby | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-05-30 | — | — | US | disclosed |
| US-20190164752-A1 | Selective Capping Processes and Structures Formed Thereby | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-05-30 | — | — | US | disclosed |
| US-20190157156-A1 | METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING ISOLATION STRUCTURES WITH LINERS | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-05-23 | — | — | US | disclosed |
| US-20190157090-A1 | METHOD OF FORMING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR DEVICE | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-05-23 | — | — | US | disclosed |
| US-10297602-B2 | Implantations for forming source/drain regions of different transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-05-21 | — | — | US | disclosed |
| US-20190148514-A1 | LOW-K GATE SPACER AND METHODS FOR FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2019-05-16 | — | — | US | disclosed |
| US-10276683-B2 | Common metal contact regions having different Schottky barrier heights and methods of manufacturing same | GLOBALFOUNDRIES INC. (KY) | 2019-04-30 | — | — | US | disclosed |
| US-10269967-B2 | MOSFETs with multiple dislocation planes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-04-23 | — | — | US | disclosed |
| US-10269803-B2 | Hybrid scheme for improved performance for P-type and N-type FinFETs | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-04-23 | — | — | US | disclosed |
| US-10269621-B2 | Contact plugs and methods forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-04-23 | — | — | US | disclosed |
| US-20190115249-A1 | Low-Resistance Contact Plugs and Method Forming the Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-04-18 | — | — | US | disclosed |
| US-20190109041-A1 | Contact Plugs and Methods Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-04-11 | — | — | US | disclosed |
| US-20190109136-A1 | Hybrid Scheme for Improved Performance for P-type and N-type FinFETs | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-04-11 | — | — | US | disclosed |
| US-20190109006-A1 | Wrap-Around Contact Plug and Method Manufacturing Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-04-11 | — | — | US | disclosed |
| US-20190109004-A1 | Selective Film Growth for Bottom-Up Gap Filling | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-04-11 | — | — | US | disclosed |
| US-20190103284-A1 | Silicon Reflow for Reducing Seam and Void and Bending During Gap Fill | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-04-04 | — | — | US | disclosed |
| US-20190103476-A1 | Gap-Filling Germanium Through Selective Bottom-Up Growth | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-04-04 | — | — | US | disclosed |
| US-20190103325-A1 | Footing Removal in Cut-Metal Process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-04-04 | — | — | US | disclosed |
| US-20190103311-A1 | Metal Gates of Transistors Having Reduced Resistivity | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-04-04 | — | — | US | disclosed |
| US-20190103473-A1 | Contact Plugs and Methods Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-04-04 | — | — | US | disclosed |
| US-20190103309-A1 | FinFET Device and Method of Manufacture | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-04-04 | — | — | US | disclosed |
| US-20190096674-A1 | Doping Through Diffusion and Epitaxy Profile Shaping | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-03-28 | — | — | US | disclosed |
| US-20190097026-A1 | Epitaxy Source/Drain Regions of FinFETs and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-03-28 | — | — | US | disclosed |
| US-20190035694-A1 | Implantations for Forming Source/Drain Regions of Different Transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-01-31 | — | — | US | disclosed |
| US-20190013400-A1 | Self-Aligned Gate Hard Mask and Method Forming Same | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2019-01-10 | — | — | US | disclosed |
| US-10170305-B1 | Selective film growth for bottom-up gap filling | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2019-01-01 | — | — | US | disclosed |
| US-10153198-B2 | Low-resistance contact plugs and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-12-11 | — | — | US | disclosed |
| US-20180350955-A1 | GATE FORMATION WITH VARYING WORK FUNCTION LAYERS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-12-06 | — | — | US | disclosed |
| US-20180342599-A1 | Metal Gate Formation Through Etch Back Process | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2018-11-29 | — | — | US | disclosed |
| US-10141225-B2 | Metal gates of transistors having reduced resistivity | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-11-27 | — | — | US | disclosed |
| US-10141431-B1 | Epitaxy source/drain regions of FinFETs and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-11-27 | — | — | US | disclosed |
| US-20180337188-A1 | Implantations for Forming Source/Drain Regions of Different Transistors | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-11-22 | — | — | US | disclosed |
| US-20180337100-A1 | Forming Transistor by Selectively Growing Gate Spacer | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2018-11-22 | — | — | US | disclosed |
| CN-108807537-A | Method for manufacturing semiconductor device | 台湾积体电路制造股份有限公司 | 2018-11-13 | — | — | CN | disclosed |
| CN-108735603-A | Transistor device and method for manufacturing the same | 台湾积体电路制造股份有限公司 | 2018-11-02 | — | — | CN | disclosed |
| US-20180315840-A1 | Deposition Selectivity Enhancement and Manufacturing Method Thereof | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-11-01 | — | — | US | disclosed |
| US-20180315652-A1 | Metal Gates of Transistors Having Reduced Resistivity | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-11-01 | — | — | US | disclosed |
| US-20180301371-A1 | Contact Plugs and Methods Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-10-18 | — | — | US | disclosed |
| US-20180294184-A1 | Low-Resistance Contact Plugs and Method Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-10-11 | — | — | US | disclosed |
| US-10062784-B1 | Self-aligned gate hard mask and method forming same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-08-28 | — | — | US | disclosed |
| US-10043886-B2 | Metal gate formation through etch back process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-08-07 | — | — | US | disclosed |
| US-10037923-B1 | Forming transistor by selectively growing gate spacer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-07-31 | — | — | US | disclosed |
| US-10032910-B2 | FinFET devices having asymmetrical epitaxially-grown source and drain regions and methods of forming the same | GlobalFoundries, Inc. (KY) | 2018-07-24 | — | — | US | disclosed |
| US-20180197970-A1 | Contact Plugs and Methods Forming Same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-07-12 | — | — | US | disclosed |
| US-20180175165-A1 | Etching Back and Selective Deposition of Metal Gate | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-06-21 | — | — | US | disclosed |
| US-9997519-B1 | Dual channel structures with multiple threshold voltages | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2018-06-12 | — | — | US | disclosed |
| US-20180122707-A1 | METHOD FOR FORMING SEMICONDUCTOR DEVICE | UNITED MICROELECTRONICS CORP. (TW) | 2018-05-03 | — | — | US | disclosed |
| US-9960084-B1 | Method for forming semiconductor device | UNITED MICROELECTRONICS CORP. (TW) | 2018-05-01 | — | — | US | disclosed |
| US-20180102430-A1 | MOSFETs with Multiple Dislocation Planes | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2018-04-12 | — | — | US | disclosed |
| US-20180040715-A1 | Metal Gate Formation Through Etch Back Process | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-02-08 | — | — | US | disclosed |
| US-20180033626-A1 | Doping Through Diffusion and Epitaxy Profile Shaping | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-02-01 | — | — | US | disclosed |
| US-20180019313-A1 | COMMON METAL CONTACT REGIONS HAVING DIFFERENT SCHOTTKY BARRIER HEIGHTS AND METHODS OF MANUFACTURING SAME | GLOBALFOUNDRIES U.S. INC. | 2018-01-18 | — | — | US | disclosed |
| US-9865732-B2 | Integrated circuits and methods of forming integrated circuits | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2018-01-09 | — | — | US | disclosed |
| US-9853157-B2 | MOSFETs with multiple dislocation planes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2017-12-26 | — | — | US | disclosed |
| US-9812543-B2 | Common metal contact regions having different Schottky barrier heights and methods of manufacturing same | GLOBALFOUNDRIES INC. (KY) | 2017-11-07 | — | — | US | disclosed |
| US-20170256624-A1 | COMMON METAL CONTACT REGIONS HAVING DIFFERENT SCHOTTKY BARRIER HEIGHTS AND METHODS OF MANUFACTURING SAME | GLOBALFOUNDRIES U.S. INC. | 2017-09-07 | — | — | US | disclosed |
| US-9741853-B2 | Stress memorization techniques for transistor devices | GLOBALFOUNDRIES INC. (KY) | 2017-08-22 | — | — | US | disclosed |
| US-20170125587-A1 | STRESS MEMORIZATION TECHNIQUES FOR TRANSISTOR DEVICES | GLOBALFOUNDRIES INC. (KY) | 2017-05-04 | — | — | US | disclosed |
| US-9627245-B2 | Methods of forming alternative channel materials on a non-planar semiconductor device and the resulting device | GLOBALFOUNDRIES INC. (KY) | 2017-04-18 | — | — | US | disclosed |
| US-9548357-B2 | Shallow trench isolation structure with sigma cavity | GLOBALFOUNDRIES INC. (KY) | 2017-01-17 | — | — | US | disclosed |
| US-20160315172-A1 | FINFET DEVICES HAVING ASYMMETRICAL EPITAXIALLY-GROWN SOURCE AND DRAIN REGIONS AND METHODS OF FORMING THE SAME | GLOBALFOUNDRIES U.S. INC. | 2016-10-27 | — | — | US | disclosed |
| US-20160284845-A1 | INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS | PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC | 2016-09-29 | — | — | US | disclosed |
| US-20160211362-A1 | MOSFETs with Multiple Dislocation Planes | TAIWAN SEMICONDUCTOR MFG (TW) | 2016-07-21 | — | — | US | disclosed |
| US-20160211373-A1 | METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION | GLOBALFOUNDRIES INC. (KY) | 2016-07-21 | — | — | US | disclosed |
| US-9379208-B2 | Integrated circuits and methods of forming integrated circuits | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-06-28 | — | — | US | disclosed |
| US-9373721-B2 | Methods of forming a non-planar ultra-thin body semiconductor device and the resulting devices | GLOBALFOUNDRIES INC. (KY) | 2016-06-21 | — | — | US | disclosed |
| US-9324841-B2 | Methods for preventing oxidation damage during FinFET fabrication | GLOBALFOUNDRIES INC. (KY) | 2016-04-26 | — | — | US | disclosed |
| US-9299838-B2 | MOSFETs with multiple dislocation planes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2016-03-29 | — | — | US | disclosed |
| US-20160056238-A1 | RAISED SOURCE/DRAIN EPI WITH SUPPRESSED LATERAL EPI OVERGROWTH | GLOBALFOUNDRIES U.S. INC. | 2016-02-25 | — | — | US | disclosed |
| US-20160020275-A1 | SHALLOW TRENCH ISOLATION STRUCTURE WITH SIGMA CAVITY | GLOBALFOUNDRIES INC. | 2016-01-21 | — | — | US | disclosed |
| US-9236452-B2 | Raised source/drain EPI with suppressed lateral EPI overgrowth | GLOBALFOUNDRIES INC. (KY) | 2016-01-12 | — | — | US | disclosed |
| US-20160005868-A1 | FINFET WITH CONFINED EPITAXY | GLOBALFOUNDRIES U.S. INC. | 2016-01-07 | — | — | US | disclosed |
| US-9231079-B1 | Stress memorization techniques for transistor devices | GLOBALFOUNDRIES INC. (KY) | 2016-01-05 | — | — | US | disclosed |
| US-20150364570-A1 | STRESS MEMORIZATION TECHNIQUES FOR TRANSISTOR DEVICES | GLOBALFOUNDRIES U.S. INC. | 2015-12-17 | — | — | US | disclosed |
| US-20150340471-A1 | RAISED SOURCE/DRAIN EPI WITH SUPPRESSED LATERAL EPI OVERGROWTH | GLOBALFOUNDRIES INC. (KY) | 2015-11-26 | — | — | US | disclosed |
| US-9147753-B2 | FinFET having uniform doping profile and method of forming the same | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2015-09-29 | — | — | US | disclosed |
| US-20150255295-A1 | METHODS OF FORMING ALTERNATIVE CHANNEL MATERIALS ON A NON-PLANAR SEMICONDUCTOR DEVICE AND THE RESULTING DEVICE | GLOBALFOUNDRIES INC. (KY) | 2015-09-10 | — | — | US | disclosed |
| US-20150255555-A1 | METHODS OF FORMING A NON-PLANAR ULTRA-THIN BODY DEVICE | GLOBALFOUNDRIES INC. (KY) | 2015-09-10 | — | — | US | disclosed |
| US-20150228792-A1 | METHODS OF FORMING A NON-PLANAR ULTRA-THIN BODY SEMICONDUCTOR DEVICE AND THE RESULTING DEVICES | GLOBALFOUNDRIES INC. (KY) | 2015-08-13 | — | — | US | disclosed |
| US-20150214369-A1 | METHODS OF FORMING EPITAXIAL SEMICONDUCTOR MATERIAL ON SOURCE/DRAIN REGIONS OF A FINFET SEMICONDUCTOR DEVICE AND THE RESULTING DEVICES | GLOBALFOUNDRIES INC. (US) | 2015-07-30 | — | — | US | disclosed |
| US-9093514-B2 | Strained and uniform doping technique for FINFETs | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2015-07-28 | — | — | US | disclosed |
| US-9076868-B1 | Shallow trench isolation structure with sigma cavity | GLOBALFOUNDRIES INC. (KY) | 2015-07-07 | — | — | US | disclosed |
| US-9059285-B2 | Structure and method for increasing strain in a device | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2015-06-16 | — | — | US | disclosed |
| US-9058988-B2 | Methods for depositing layers having reduced interfacial contamination | APPLIED MATERIALS, INC. (US) | 2015-06-16 | — | — | US | disclosed |
| US-20150097197-A1 | FINFET WITH SIGMA CAVITY WITH MULTIPLE EPITAXIAL MATERIAL REGIONS | GLOBALFOUNDRIES INC. (KY) | 2015-04-09 | — | — | US | disclosed |
| US-20150099340-A1 | METHODS FOR PREVENTING OXIDATION DAMAGE DURING FINFET FABRICATION | GLOBALFOUNDRIES INC. (KY) | 2015-04-09 | — | — | US | disclosed |
| US-20150050792-A1 | EXTRA NARROW DIFFUSION BREAK FOR 3D FINFET TECHNOLOGIES | GLOBALFOUNDRIES INC. (KY) | 2015-02-19 | — | — | US | disclosed |
| US-8945971-B2 | Wafer warpage reduction | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2015-02-03 | — | — | US | disclosed |
| US-20150024569-A1 | INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS | PARABELLUM STRATEGIC OPPORTUNITIES FUND LLC | 2015-01-22 | — | — | US | disclosed |
| US-20140346576-A1 | MOSFETS WITH MULTIPLE DISLOCATION PLANES | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-11-27 | — | — | US | disclosed |
| US-8884341-B2 | Integrated circuits | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-11-11 | — | — | US | disclosed |
| US-20140264345-A1 | WAFER WARPAGE REDUCTION | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2014-09-18 | — | — | US | disclosed |
| US-20140252412-A1 | Strained and Uniform Doping Technique for FINFETs | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2014-09-11 | — | — | US | disclosed |
| US-8809918-B2 | MOSFETs with multiple dislocation planes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-08-19 | — | — | US | disclosed |
| US-20140159052-A1 | METHOD AND STRUCTURE FOR TRANSISTOR WITH REDUCED DRAIN-INDUCED BARRIER LOWERING AND ON RESISTANCE | GLOBALFOUNDRIES INC. (KY) | 2014-06-12 | — | — | US | disclosed |
| US-20140138780-A1 | FINFET HAVING UNIFORM DOPING PROFILE AND METHOD OF FORMING THE SAME | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-05-22 | — | — | US | disclosed |
| US-8551845-B2 | Structure and method for increasing strain in a device | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-10-08 | — | — | US | disclosed |
| US-8551845-B2 | Structure and method for increasing strain in a device | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-10-08 | — | — | US | disclosed |
| US-8546873-B2 | Integrated circuit and method of fabrication thereof | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2013-10-01 | — | — | US | disclosed |
| US-20130161649-A1 | STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2013-06-27 | — | — | US | disclosed |
| US-20130099294-A1 | MOSFETs with Multiple Dislocation Planes | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-04-25 | — | — | US | disclosed |
| US-20130043511-A1 | INTEGRATED CIRCUITS AND METHODS OF FORMING INTEGRATED CIRCUITS | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-02-21 | — | — | US | disclosed |
| US-20120068193-A1 | STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-03-22 | — | — | US | disclosed |
| US-20120068193-A1 | STRUCTURE AND METHOD FOR INCREASING STRAIN IN A DEVICE | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2012-03-22 | — | — | US | disclosed |
| US-20120012940-A1 | INTEGRATED CIRCUIT AND METHOD OF FABRICATION THEREOF | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2012-01-19 | — | — | US | disclosed |
| US-8058123-B2 | Integrated circuit and method of fabrication thereof | GLOBALFOUNDRIES SINGAPORE PTE. LTD. (SG) | 2011-11-15 | — | — | US | disclosed |
| US-7960236-B2 | Phosphorus containing Si epitaxial layers in N-type source/drain junctions | APPLIED MATERIALS, INC. (US) | 2011-06-14 | — | — | US | disclosed |
| US-20100255661-A1 | METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION | APPLIED MATERIALS, INC. (US) | 2010-10-07 | — | — | US | disclosed |
| WO-2010102089-A2 | METHODS FOR DEPOSITING LAYERS HAVING REDUCED INTERFACIAL CONTAMINATION | APPLIED MATERIALS, INC. (US) | 2010-09-10 | — | — | WO | disclosed |
| WO-2009079485-A1 | PHOSPHORUS CONTAINING SI EPITAXIAL LAYERS IN N-TYPE SOURCE/DRAIN JUNCTIONS | APPLIED MATERIALS, INC. (US) | 2009-06-25 | — | — | WO | disclosed |
| US-20090140292-A1 | INTEGRATED CIRCUIT AND METHOD OF FABRICATION THEREOF | CHARTERED SEMICONDUCTOR MANUFACTURING, LTD. (SG) | 2009-06-04 | — | — | US | disclosed |
| US-20080182075-A1 | Phosphorus Containing Si Epitaxial Layers in N-Type Source/Drain Junctions | APPLIED MATERIALS, INC. | 2008-07-31 | — | — | US | disclosed |
| US-7402872-B2 | Method for forming an integrated circuit | INTEL CORPORATION (US) | 2008-07-22 | — | — | US | disclosed |
| US-20060131665-A1 | Method for forming an integrated circuit | TAHOE RESEARCH, LTD. (IE) | 2006-06-22 | — | — | US | disclosed |
| US-4365992-A | Method of treating ferrous metal | PENNSYLVANIA ENGINEERING CORPORATION (US) | 1982-12-28 | — | — | US | disclosed |
| US-4365992-A | Method of treating ferrous metal | PENNSYLVANIA ENGINEERING CORPORATION (US) | 1982-12-28 | — | — | US | disclosed |