SCHEMBL372523

SCHEMBL372523

C=CC(=O)C1CNCCS1

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL28340253 0.78
SCHEMBL6630349 0.78
SCHEMBL27529688 0.77 SLC6A1 (0.31)
SCHEMBL337230 0.75
SCHEMBL1847750 0.75
Hydrochloric Acid SCHEMBL720508 0.74 SLC6A1 (0.38)
SCHEMBL3364075 0.74
SCHEMBL27260254 0.74
SCHEMBL2921164 0.74
SCHEMBL28340254 0.72

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12365815-B2 Polishing liquid, polishing liquid set, polishing method, and defect suppression method RESONAC CORPORATION (JP) 2025-07-22 US disclosed
CN-120202233-A Active energy ray-curable composition and cured product 三洋化成工业株式会社 2025-06-24 CN disclosed
CN-111433311-B Polishing liquid, polishing liquid set, polishing method, and defect suppression method 株式会社力森诺科 2025-05-30 CN disclosed
WO-2024214603-A1 ACTIVE ENERGY RAY-CURABLE COMPOSITION AND CURED PRODUCT THEREOF 三洋化成工業株式会社 2024-10-17 WO disclosed
WO-2024095637-A1 ACTINIC-RAY-CURABLE COMPOSITION AND CURED OBJECT 三洋化成工業株式会社 2024-05-10 WO disclosed
CN-110998800-B Polishing liquid, polishing liquid set and polishing method 株式会社力森诺科 2023-09-22 CN disclosed
US-20230295466-A1 POLISHING LIQUID, POLISHING LIQUID SET, POLISHING METHOD, AND DEFECT SUPPRESSION METHOD RESONAC CORPORATION (JP) 2023-09-21 US disclosed
US-11649377-B2 Polishing liquid, polishing liquid set and polishing method RESONAC CORPORATION (JP) 2023-05-16 US disclosed
US-11634670-B2 Cleaning agent for semiconductor component, and use thereof TOAGOSEI CO. LTD. (JP) 2023-04-25 US disclosed
US-20200299544-A1 POLISHING LIQUID, POLISHING LIQUID SET AND POLISHING METHOD RESONAC CORPORATION (JP) 2020-09-24 US disclosed
EP-1866166-A1 INK SET FOR INK JET RECORDING, INK FOR INK JET RECORDING, AND INK JET IMAGE RECORDING METHOD FUJIFILM CORPORATION (JP) 2007-12-19 EP disclosed
US-20070175104-A1 Polishing slurry for silicon oxide, additive liquid and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2007-08-02 US disclosed
US-20070046715-A1 Image forming apparatus FUJI PHOTO FILM CO., LTD. 2007-03-01 US disclosed
US-20070046719-A1 Image forming apparatus FUJI PHOTO FILM CO., LTD. 2007-03-01 US disclosed
US-20070024686-A1 Image forming apparatus FUJI PHOTO FILM CO., LTD. 2007-02-01 US disclosed
US-20070024684-A1 Image forming apparatus and image forming method FUJI PHOTO FILM CO., LTD. 2007-02-01 US disclosed
US-20060289826-A1 Hazardous substance decomposer and process for producing the same RESONAC CORPORATION (JP) 2006-12-28 US disclosed
WO-2006104281-A1 INK SET FOR INK JET RECORDING, INK FOR INK JET RECORDING, AND INK JET IMAGE RECORDING METHOD FUJIFILM CORPORATION (JP) 2006-10-05 WO disclosed
US-20060148667-A1 Cmp polishing compound and polishing method HITACHI CHEMICAL CO., LTD. (JP) 2006-07-06 US disclosed
CN-1745460-A CMP polishing slurry and polishing method HITACHI CHEMICAL CO LTD (JP) 2006-03-08 CN disclosed